MRF581
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The
MRF581
is Designed for
High current low Power Amplifier
Applications up to 1.0 GHz.
PACKAGE STYLE
Dim. Are in mm
FEATURES:
•
Low Noise Figure
•
Low Intermodulation Distortion
•
High Gain
•
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
200 mA
36 V
18 V
2.5 V
2.5 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
Leads 1 and 3 = Emitter
2 = Collector
4 = Base
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
EBO
I
CBO
h
FE
C
cb
G
P
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 1.0 mA
I
C
= 1.0 mA
I
E
= 100 µA
V
EB
= 2.0 V
V
CB
= 15 V
V
CE
= 5.0 V
V
CB
= 10 V
V
CC
= 10 V
I
C
= 50
I
C
= 50 mA
f = 1.0 MHz
f = 0.5 GHz
MINIMUM TYPICAL MAXIMUM
36
18
2.5
100
100
50
1.4
13
15.5
200
2.0
UNITS
V
V
V
µA
µA
---
pF
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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