MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF4427/D
NPN Silicon
RF Low Power Transistor
Designed for amplifier, frequency multiplier, or oscillator applications in
industrial equipment constructed with surface mount components. Suitable for
use as output driver or pre–driver stages in VHF and UHF equipment.
•
Low Cost SORF Plastic Surface Mount Package
•
Guaranteed RF Specification — |S21|2
•
S–Parameter Characterization
•
Low Voltage Version of MRF3866
•
Tape and Reel Packaging Available.
R2 suffix = 2,500 units per reel
MRF4427R2
1.0 W, 175 MHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 751–05, STYLE 1
SORF
(SO–8)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 75°C
Derate above 75°C
Operating Junction and Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ, Tstg
Symbol
R
θJC
Value
20
40
2.0
400
1.67
22.2
– 65 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Max
45
Unit
°C/W
DEVICE MARKING
MRF4427 = 4427
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
Emitter–Base Breakdown Voltage (IE = 100
µAdc)
Collector Cutoff Current (VCE = 12 Vdc, IB = 0)
V(BR)CEO
V(BR)CER
V(BR)EBO
ICEO
20
40
2.0
—
—
—
—
—
—
—
—
20
Vdc
Vdc
Vdc
µAdc
(continued)
NOTE:
1.Case temperature measured on collector lead immediately adjacent to body of package.
REV 8
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF4427R2
1
ELECTRICAL CHARACTERISTICS — continued
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 360 mAdc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
hFE
10
5.0
VCE(sat)
—
50
—
60
200
—
—
mVdc
—
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz)
Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
fT
Cob
—
—
1600
—
—
3.0
MHz
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(Pin = 15 mW, VCC = 12 Vdc, f = 175 MHz)
Collector Efficiency (Figure 1)
(Pout = 1.0 W, VCC = 12 Vdc, f = 175 MHz)
Insertion Gain
(VCE = 12 Vdc, IC = 50 mA, f = 200 MHz)
Gpe
η
|S21|2
—
—
18
60
—
—
dB
%
14
16.4
—
dB
C3
D.U.T.
C1
C2
RFC2
RFC1
L1
C4
L2
C5
C8
C6
C7
C9
RFC3
C10
C11
C12
C13
C14
RFC4
C15
C16
+
D1
R1
R2
VCC
C1, C2 — 5.5 – 18 pF Erie ceramic trimmer
C3 — 1000 pF ATC 100 mil chip cap.
C4 — 9.0 – 35 pF Erie ceramic trimmer
C5 — Arco 405 mica trimmer
C6, C8, C10, C14 — 0.1
µF
Erie blue cap.
C7, C9 — 470 pF ATC 100 mil chip cap.
C11, C13, C15 — 1.0
µF
Erie blue cap, non–polar
C12 — 1000 pF feedthru
C16 — 10
µF,
25 V tantalum
D1 — 1N4148 or 1N914
L1 — 6T #20 AWG on #2 drill bit
L2 — 4T #20 AWG on #4 drill bit
R1 — 4.7 kΩ 1/8 watt carbon
R2 — 100
Ω
1/8 watt carbon
RFC1 – 4 — 10
µH
molded choke
Figure 1. 175 MHz RF Amplifier Circuit for Functional Tests
MRF4427R2
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
10
9
Cob, OUTPUT CAPACITANCE (pF)
8
7
6
5
4
3
2
1
0
3
6
9
12
15
18
21
24
27
30
f = 1 MHz
f
τ
, GAIN BANDWIDTH PRODUCT (MHz)
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
20
40
10 120 140
IC, COLLECTOR 0
CURRENT (mA)
60
80
160
180
200
VCC = 12 Vdc
f = 200 MHz
VCB, COLLECTOR–BASE VOLTAGE (V)
Figure 2. Collector–Base Capacitance
versus Voltage
Figure 3. Gain Bandwidth Product versus
Collector Current
1200
1100
Pout , OUTPUT POWER (mW)
1000
900
800
700
600
500
400
300
4
5
6
7
8
9
10
11
12
13
14
f = 136 MHz
175 MHz
Pin = 15 mW
Pout , OUTPUT POWER (mW)
1200
1100
1000
900
800
700
600
500
400
300
110
120
130
140
150
160
170
180
190
200
210
VCC = 5 V
Pin = 30 mW
VCC = 7.5 V
Pin = 30 mW
VCC = 12.5 V
Pin = 15 mW
VCC, COLLECTOR SUPPLY VOLTAGE (V)
f, FREQUENCY (MHz)
Figure 4. Output Power versus Voltage
Figure 5. Output Power versus Frequency
MOTOROLA RF DEVICE DATA
MRF4427R2
3
VCE
(Volts)
5.0
IC
(mA)
5.0
f
(MHz)
50
100
200
500
750
1000
50
100
200
500
750
1000
50
100
200
500
750
1000
50
100
200
500
750
1000
50
100
200
500
750
1000
50
100
200
500
750
1000
S11
|S11|
0.82
0.83
0.81
0.80
0.79
0.76
0.77
0.79
0.79
0.78
0.77
0.74
0.77
0.79
0.79
0.78
0.77
0.74
0.83
0.82
0.81
0.79
0.78
0.75
0.73
0.76
0.77
0.76
0.75
0.72
0.73
0.75
0.76
0.75
0.74
0.71
∠φ
– 104
– 141
– 165
169
156
144
– 151
– 168
– 180
163
152
141
– 163
– 174
177
162
151
140
– 97
– 135
– 162
171
157
145
– 143
– 164
– 177
165
154
143
– 156
– 171
59
164
153
142
|S21|
10.3
6.1
3.2
1.3
0.8
0.6
19
9.9
5.0
2.0
1.3
0.9
21.1
10.7
5.4
2.2
1.4
1.1
11
6.8
3.6
1.4
0.9
0.7
22.1
11.7
6.0
2.4
1.6
1.1
25.5
13.1
6.6
2.6
1.7
1.2
S21
∠φ
125
103
85
57
42
30
107
94
82
61
48
36
103
92
82
62
50
38
129
107
88
60
44
32
111
96
84
63
49
38
106
94
83
64
51
38
|S12|
0.05
0.06
0.07
0.07
0.08
0.11
0.02
0.03
0.04
0.07
0.10
0.13
0.02
0.02
0.03
0.07
0.10
0.13
0.04
0.05
0.05
0.06
0.07
0.09
0.02
0.02
0.03
0.06
0.08
0.11
0.02
0.02
0.03
0.06
0.09
0.12
S12
∠φ
38
26
21
32
49
61
36
37
49
62
66
66
37
50
62
67
69
67
46
29
24
37
55
68
38
39
48
64
67
69
41
49
60
69
70
70
|S22|
0.68
0.51
0.44
0.49
0.58
0.65
0.35
0.21
0.16
0.22
0.31
0.37
0.29
0.19
0.16
0.20
0.26
0.32
0.75
0.61
0.54
0.47
0.64
0.70
0.43
0.29
0.22
0.27
0.35
0.42
0.32
0.20
0.15
0.20
0.27
0.34
S22
∠φ
– 34
– 40
– 46
– 73
– 94
– 114
– 75
– 87
– 97
– 106
– 115
– 127
– 98
– 119
– 134
– 131
– 130
– 139
– 26
– 29
– 34
– 57
– 76
– 95
– 52
– 52
– 53
– 69
– 84
– 98
– 67
– 69
– 71
– 81
– 92
– 104
25
50
12
5.0
25
50
Table 1. Common Emitter S–Parameters
Freq.
(MHz)
136
175
136
175
136
175
136
175
136
175
136
175
Pin
(mW)
15
15
—
—
30
30
—
—
30
30
—
—
Pout
(mW)
—
—
1000
1000
—
—
650
650
—
—
450
450
VCC
(Volts)
12.5
12.5
12.5
12.5
7.5
7.5
7.5
7.5
5.0
5.0
5.0
5.0
Zin
(Ohms)
6.2 – j11.6
4.6 – j10.4
—
—
5.65 – j12.6
6.25 – j12.2
—
—
6.1 – j13.3
5.9 – j12.22
—
—
ZOL*
(Ohms)
—
—
47.7 + j41.7
47.4 – j34.4
—
—
27.6 – j32.4
27.9 – j27.6
—
—
24.8 – j22.8
28.3 – j29.3
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Table 2. Series Input/Output Impedances
MRF4427R2
4
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
A
8
D
5
C
E
1
4
H
0.25
M
B
M
h
B
C
e
A
SEATING
PLANE
X 45
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
DIM
A
A1
B
C
D
E
e
H
h
L
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.35
0.49
0.18
0.25
4.80
5.00
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0
_
7
_
q
L
0.10
A1
0.25
B
M
C B
S
A
S
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
EMITTER
COLLECTOR
COLLECTOR
EMITTER
EMITTER
BASE
BASE
EMITTER
q
CASE 751–05
ISSUE S
MOTOROLA RF DEVICE DATA
MRF4427R2
5
51单片机
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