MRW2020
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MRW2020
is a high
performance common base RF power
transistor intended for 28V operation
across the 1 to 2.3 GHz frequency
range.
PACKAGE STYLE .250X.300 2L FLG
FEATURES:
•
Gain: 5.2 dB Min. at 20 W
•
Output Power: 20 W
•
Diffused Ballast Resistors
•
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
4.0 A
50 V
3.5 V
60 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
3.0 °C/W
CHARACTERISTICS
SYMBOL
BV
CES
BV
EBO
I
CBO
h
FE
C
ob
G
PB
η
C
Ψ
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 160 mA
I
E
= 2.0 mA
V
CB
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CC
= 28 V
V
CC
= 28 V
Load VSWR =
∞:1,
All Phase Angles
P
OUT
= 20 W
I
C
= 800 mA
f = 1.0 MHz
f = 2.0 GHz
f = 2.0 GHz
MINIMUM TYPICAL MAXIMUM
50
3.5
---
10
---
5.2
40
---
---
---
---
---
---
---
---
---
2.0
100
24
---
---
UNITS
V
V
A
---
pF
dB
%
No Degradation in Output Power
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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