Dual 200mA CMOS
LDO Voltage Regulator
(Preliminary)
Description
SE5221
is a
dual-channel
low dropout
regulator supplying up to 200mA at each channel.
The output voltages are selectable between
2.8V/3.3V
for
Channel-1
and
1.3V/1.8V
for
Channel-2 with 3% accuracy.
The SE5221 uses internal PMOS transistors
as the pass devices to regulate the output voltages.
The IC consumes 120μA supply current when both
channels are turned on, and is nearly independent
of load currents and dropout conditions. The EN1
and EN2 pins allows for individual channel controls.
When both outputs are shut down simultaneously,
the chip will be turned off and consumes nearly zero
operating current which is suitable for battery-power
devices. Other features include a current limiting,
and over temperature protection.
SE5221
Features
Typical 256mV Dropout Voltage at 200mA
Up to 200mA Output Current (Each Channel)
Low Ground Current at 120uA (Typ.)
Dual Shutdown Pins to Control Each Output
Current Limiting and Thermal Protection
Two LDOs in SOT-23-6L Package
100% Lead (Pb)-Free
Application
Cellular Phones.
Laptop, Notebook, and Palmtop Computers.
Battery-Powered Equipments.
Hand-held Equipments.
Wireless LAN Devices.
Ordering Information
SE5221 _ _ L G
Pin (1=>6):
G: V
out2
/GND/EN2/EN1/V
IN
/V
OUT1
L: SOT23-6L
D: V
OUT2
= 1.8V
G: V
OUT2
= 1.3V
A: V
OUT1
= 3.3V
Pin Configuration
Application Diagram
B: V
OUT1
= 2.8V
Chip enable
3
Chip enable
EN2
EN1
6
1
VOUT2 VOUT1
4
VIN
GND
2
5
2.2uF
2.2uF
2.2uF
Revision 9/4/2008
Preliminary and all contents are subject to change without prior notice
© Seaward Electronics Inc., 2007. • www.seawardinc.com • Page 1
Dual 200mA CMOS
LDO Voltage Regulator
(Preliminary)
Block Diagram
VIN
P5
OCP
OTP
OCP
SE5221
EN2
P3
VREF
EN1
P6
VOUT2
P1
VOUT1
P4
GND
P2
Functional Pin Desciption
Pin No.
1
2
3
4
5
6
Pin Name
VOUT2
GND
EN2
EN1
VIN
VOU1
Pin Function
Channel 2 Output Voltage
Common Ground
Chip Enable (Active High)
Chip Enable (Active High)
Supply Input
Channel 1 Output Voltage
Ordering/Marking Information
Package
Ordering Information
Vout1=3.3V
Vout2=1.8V
Vout1=2.8V
Vout2=1.8V
Vout1=3.3V
Vout2=1.3V
Vout1=2.8V
Vout2=1.3V
SE5221ADLG-LF
SE5221BDLG-LF
SE5221AGLG-LF
SE5221BGLG-LF
21ADLz
21BDLz
21AGLz
21BGLz
Marking Information
The last character is the
batch number.
A dot on top right corner
is for lead-free process.
LF: lead free.
Revision 9/4/2008
Preliminary and all contents are subject to change without prior notice
© Seaward Electronics Inc., 2007. • www.seawardinc.com • Page 2
Dual 200mA CMOS
LDO Voltage Regulator
(Preliminary)
Absolute Maximum Rating
(1)
Parameter
Input Voltage
Enable Voltage
Power Dissipation
Thermal Resistance Junction-to-Ambient
Lead Temperature (Soldering, 5 sec.)
Junction Temperature
Storage Temperature
T
J
T
S
Symbol
V
IN
V
EN
P
D
Θ
JA
Value
6
-0.3 to V
IN
Internally Limited
(3)
230 (SOT-23-6)
260
+150
-40 to +150
SE5221
Units
V
V
°C/W
°C
°C
°C
Operating Rating
(2)
Parameter
Supply Input Voltage
Junction Temperature
Symbol
V
IN
T
J
Value
+3.3V to +5.5
0 to +125
Units
V
°C
Electrical Characteristics
V
IN
=Vout+1V; V
EN1
=V
EN2
=V
IN
; I
OUT
= 10mA, C
IN
= 2.2μF; C
OUT
= 2.2μF; T
J
= 25°C; unless otherwise specified
Symbol
Parameter
V
OUT
Output Voltage
Accuracy
ΔV
OUT
/V
OUT
Line Regulation
Conditions
Channel 1
SE5221 – 2.8V
SE5221 – 3.3V
Channel 2
SE5221 – 1.3V
SE5221 – 1.8V
Channel 1
V
IN
= (V
OUT
+0.4)V to 5.5V
Channel 2
V
IN
=(V
OUT
+0.4)V to 5.5V
Channel 1
I
OUT
= 1mA to 200mA
Channel 2
I
OUT
= 1mA to 200mA
Min
2.716
3.201
1.261
1.746
--
--
--
--
Typ
2.8
3.3
1.3
1.8
0.14
0.14
0.66
1.32
Max
2.884
3.399
Unit
V
1.339
1.854
--
%/V
--
--
%
--
ΔV
OUT
/V
OUT
Load
Regulation
(5)
Revision 9/4/2008
Preliminary and all contents are subject to change without prior notice
© Seaward Electronics Inc., 2007. • www.seawardinc.com • Page 3
Dual 200mA CMOS
LDO Voltage Regulator
(Preliminary)
Electrical Characteristics (Continued)
V
IN
=Vout+1V; V
EN1
=V
EN2
=V
IN
; I
OUT
= 10mA, C
IN
= 2.2μF; C
OUT
= 2.2μF; T
J
= 25°C; unless otherwise specified
SE5221
Symbol
ΔV
OUT
/ΔT
Parameter
Output Voltage
Temperature
Coefficient
(4)
Conditions
Channel 1
Channel 2
Channel 1
I
OUT
= 100mA
I
OUT
= 200mA
I
OUT
= 100mA
I
OUT
= 200mA
Min
--
--
--
--
--
--
--
--
--
--
--
1.6
--
--
Typ
-0.025
-0.63
128
256
237
427
180
30
60
110
125
--
--
Max
--
--
--
--
--
--
--
--
--
--
--
--
Unit
mV/°C
V
IN
– V
OUT
Dropout Voltage
(6)
Channel 2
mV
T
PROTECTION
PSRR
I
Q
Thermal Protection
Ripple Rejection
Quiescent Current
Enable Input
Threshold Voltage
Shutdown Supply
Current
Current Limit
Thermal Protection Temperature
Protection Hysterisys
f = 100 Hz,
Vin=4.5V,Vp-p=1V,Iout=100mA
No Load
I
OUT
= 100mA (Both Channel)
Voltage Increasing, Output Turns
On, Logic High
Voltage Decreasing, Output Turns
Off, Logic Low
°C
dB
μA
V
TH(EN)
V
0.4
5
--
--
uA
mA
I
leak
I
MAX
Channel 1
Channel 2
200
200
Note 1:
Exceeding the absolute maximum rating may damage the device.
Note 2:
The device is not guaranteed to function outside its operating range.
Note 3:
The maximum allowable power dissipation at any T
A
(ambient temperature) is calculated using: P
D(MAX)
=
(T
J(MAX)
– T
A
)/Θ
JA
. Exceeding the maximum allowable power dissipation will result in excessive die temperature,
and the regulator will go into thermal shutdown. See “Thermal Consideration” section for details.
Note 4:
Output voltage temperature coefficient is the worst case voltage change divided by the total temperature range.
Note 5:
Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested
for load regulation in the load range from 10mA to 200mA.
covered by the thermal regulation specification.
Note 6:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its
nominal value measured at 1V differential.
Changes in output voltage due to heating effects are
Revision 9/4/2008
Preliminary and all contents are subject to change without prior notice
© Seaward Electronics Inc., 2007. • www.seawardinc.com • Page 4
Dual 200mA CMOS
LDO Voltage Regulator
(Preliminary)
Typical Operating Characteristics
IQ VS VIN
150
140
SE5221
IQ VS ILOAD
160
IQ (uA)
150
140
130
120
110
100
0
40
80
120
160
200
ILOAD (mA)
130
IQ
（
uA
）
120
110
100
90
80
Iq
（
no load
）
Iq
（
Both load=100mA
）
2.5
3
3.5
4
4.5
5
5.5
6
VIN
（
V
）
122
120
IQ Vs temperature
2.855
2.854
Vout(V)
2.853
2.852
2.851
2.850
Vout VS Temperture
IQ(uA)
118
116
114
112
25
50
75
Temperature(
℃
)
100
125
25
50
75
Temperature(℃)
100
125
PSRR VS Frequency
80
70
60
50
40
30
20
10
0
0.01
PSRR(dB)
Vout1
Vout2
0.1
1
10
Frequency(KHz)
100
1000
Revision 9/4/2008
Preliminary and all contents are subject to change without prior notice
© Seaward Electronics Inc., 2007. • www.seawardinc.com • Page 5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
