电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SHD626051_10

产品描述hermetic silicon carbide rectifier
文件大小56KB,共4页
制造商SENSITRON
官网地址http://www.sensitron.com/
下载文档 选型对比 全文预览

SHD626051_10概述

hermetic silicon carbide rectifier

文档预览

下载PDF文档
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4074, REV. G
SHD626051
SHD626051P
SHD626051N
SHD626051D
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION:
A 600-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-257
PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
High Frequency Option
- Non-magnetic Glidcop leads are available for improved performance at
high frequency; use part number prefix SHDG
Ceramic Seal Option
– For ceramic seals use part number prefix SHDC
MAXIMUM RATINGS
RATING
PEAK INVERSE VOLTAGE
MAXIMUM DC OUTPUT CURRENT (With T
C
= 65
O
C for P and N suffixes)
MAXIMUM DC OUTPUT CURRENT (With T
C
= 65
O
C for Single and D suffixes)
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
O
(t = 8.3ms, Sine) per leg, T
C
= 25 C
MAXIMUM POWER DISSIPATION, T
C
= 25
O
C,
MAXIMUM THERMAL RESISTANCE, Junction to Case PER LEG
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
ALL RATINGS ARE @ T
C
= 25
°C
UNLESS OTHERWISE SPECIFIED.
SYMBOL
PIV
I
O
I
O
I
FRM
P
d
R
θ
JC
Top, Tstg
MAX.
600
20
10
50
40
2.5
-55 to 200
UNITS
Volts
Amps
Amps
Amps
W
°C/W
°C
*
Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the
packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be
performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
MAXIMUM FORWARD VOLTAGE DROP
Pulsed (I
f
= 10 A PER LEG) V
f
MAXIMUM FORWARD VOLTAGE DROP
Pulsed (I
f
= 6 A PER LEG) V
f
T
J
= 25°C
T
J
= 150
°C
T
J
= 25°C
T
J
= 150
°C
TYP
1.65
2.05
1.35
1.60
0.04
0.08
250
35
MAX.
1.80
2.20
1.45
1.70
0.15
0.50
350
N/A
UNITS
Volts
Volts
MAXIMUM REVERSE CURRENT (I
r
@ 600V PIV PER LEG) T
J
= 25
°C
T
J
= 150
°C
JUNCTION CAPACITANCE C
T)
(V
r
=5V) per leg
TOTAL CAPACITIVE CHARGE
C
T
Q
C
per leg
mA
pF
nC
(V
R
=600V I
F
=20A di/dt=500A/μs T
J
=25°C) This is design information only
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-mail Address - sales@sensitron.com
© 2003 Sensitron Semiconductor

SHD626051_10相似产品对比

SHD626051_10 SHD626051D
描述 hermetic silicon carbide rectifier hermetic silicon carbide rectifier

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 637  1755  2874  1015  303  13  36  58  21  7 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved