CYStech Electronics Corp.
P-Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C734J3
Issued Date : 2009.07.09
Revised Date :
Page No. : 1/7
MTB12P04J3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Pb-free lead plating & Halogen-free package
BV
DSS
I
D
R
DSON(MAX)
-40V
-25A
12.6mΩ
Equivalent Circuit
MTB12P04J3
Outline
TO-252
G：Gate D：Drain
S：Source
G D S
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C
Continuous Drain Current @ T
C
=100°C
Pulsed Drain Current
*1
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=-25A, R
G
=25Ω
Repetitive Avalanche Energy @ L=0.05mH
*2
Total Power Dissipation @T
C
=25℃
Total Power Dissipation @T
C
=100℃
Operating Junction and Storage Temperature Range
Note : *1
.
Pulse width limited by maximum junction temperature
*2. Duty cycle
≤
1%
MTB12P04J3
V
DS
V
GS
I
D
I
D
I
DM
I
AS
E
AS
E
AR
Pd
Tj, Tstg
-40
±20
-25
-18
-100
-25
31.25
15
50
17
-55~+175
V
A
mJ
W
°C
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Spec. No. : C734J3
Issued Date : 2009.07.09
Revised Date :
Page No. : 2/7
Value
2.5
75
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
*1
*1
Min.
-40
-1.0
-
-
-
-25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-1.8
-
-
-
-
11.3
18
28
50
8
11
15
40
60
50
3925
1330
1162
3.5
-
-
-
40
30
Max.
-
-3.2
±
100
-1
-25
-
12.6
23
-
-
-
-
-
-
-
-
-
-
-
-
-25
-100
-1.3
-
-
Unit
V
V
nA
μA
μA
A
m
Ω
m
Ω
S
nC
Test Conditions
V
GS
=0, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=
±
20, V
DS
=0
V
DS
=-32V, V
GS
=0
V
DS
=-30V, V
GS
=0, T
J
=125°C
V
DS
=-5V, V
GS
=-4.5V
V
GS
=-10V, I
D
=-25A
V
GS
=-5V, I
D
=-20A
V
DS
=-5V, I
D
=-25A
I
D
=-25A, V
DS
=-20V, V
GS
=-10V
V
DS
=-20V, I
D
=-1A, V
GS
=-10V,
R
G
=6
Ω
G
FS
*1
Dynamic
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Ciss
Coss
Crss
Rg
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
ns
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=-20V, f=1MHz
V
GS
=15mV, V
DS
=0, f=1MHz
I
F
=I
S
, V
GS
=0V
I
F
=-25A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTB12P04J3
MTB12P04J3
Package
TO-252
(Pb-free lead plating & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Marking
B12P04
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C734J3
Issued Date : 2009.07.09
Revised Date :
Page No. : 3/7
MTB12P04J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C734J3
Issued Date : 2009.07.09
Revised Date :
Page No. : 4/7
MTB12P04J3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C734J3
Issued Date : 2009.07.09
Revised Date :
Page No. : 5/7
Carrier Tape Dimension
MTB12P04J3
CYStek Product Specification
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
