CYStech Electronics Corp.
P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C387N3
Issued Date : 2007.06.13
Revised Date :
Page No. : 1/6
MTP3403AN3
Features
•
V
DS
=-30V
R
DS(ON)
=85m
Ω
@V
GS
=-4.5V, I
DS
=-2A
R
DS(ON)
=120m
Ω
@V
GS
=-2.5V, I
DS
=-1A
•
Advanced trench process technology
•
High density cell design for ultra low on resistance
•
Low gate charge
•
Compact and low profile SOT-23 package
•
Pb-free package
Equivalent Circuit
MTP3403AN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
A
=25°C
(Note 1)
Continuous Drain Current @T
A
=70°C
(Note 1)
Pulsed Drain Current
(Note 2)
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature
Symbol
V
DS
V
GS
I
D
I
D
I
DM
P
D
Tj, Tstg
Limits
-30
±12
-3.2
-2.6
-10
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C
Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad.
2. Pulse width limited by maximum junction temperature.
MTP3403AN3
CYStek Product Specification
CYStech Electronics Corp.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient
Symbol
Rth,ja
Spec. No. : C387N3
Issued Date : 2007.06.13
Revised Date :
Page No. : 2/6
Limit
90
Unit
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
ΔBV
DSS
/ΔTj
V
GS(th)
I
GSS
I
DSS
I
DSS
*R
DS(ON)
Min.
-30
-
-0.5
-
-
-
-
-
-
-
Typ.
-
-0.1
-
-
-
-
-
-
-
9
735
100
80
7
15
21
15
10
1.8
3.6
-
24
19
Max.
-
-
-1.2
±100
-1
-25
70
85
120
-
1325
-
-
-
-
-
-
18
-
-
-1.2
-
-
Unit
V
V/
°C
V
nA
µA
µA
mΩ
S
Test Conditions
V
GS
=0, I
D
=-250µA
Reference to 25
°C,
I
D
=-1mA
V
DS
=V
GS
, I
D
=-250µA
V
GS
=±12V, V
DS
=0
V
DS
=-30V, V
GS
=0
V
DS
=-24V, V
GS
=0, Tj=70
°C
I
D
=-2.6A, V
GS
=-10V
I
D
=-2.0A, V
GS
=-4.5V
I
D
=-1.0A, V
GS
=-2.5V
V
DS
=-5V, I
D
=-3A
*G
FS
Dynamic
Ciss
-
Coss
-
Crss
-
*t
d(ON)
-
*t
r
-
*t
d(OFF)
-
*t
f
-
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*V
SD
-
*trr
-
*Qrr
-
pF
V
DS
=-25V, V
GS
=0, f=1MHz
V
DS
=-15V, I
D
=-3.2A, V
GS
=-10V, R
D
=4.6
Ω
,
R
G
=3.3
Ω
V
DS
=-24V, I
D
=-3.2A,
V
GS
=-4.5V,
V
GS
=0V, I
SD
=-1.2A
I
S
=-3.2A, V
GS
=0V, dI/dt=100A/µs
*Pulse Test : Pulse Width
≤300µs,
Duty Cycle≤2%
ns
nC
V
ns
nC
Ordering Information
Device
MTP3403AN3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
3403A
MTP3403AN3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C387N3
Issued Date : 2007.06.13
Revised Date :
Page No. : 3/6
MTP3403AN3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C387N3
Issued Date : 2007.06.13
Revised Date :
Page No. : 4/6
MTP3403AN3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C387N3
Issued Date : 2007.06.13
Revised Date :
Page No. : 5/6
Carrier Tape Dimension
MTP3403AN3
CYStek Product Specification
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