CYStech Electronics Corp.
N-CHANNEL MOSFET
Spec. No. : C325A3
Issued Date : 2004.02.13
Revised Date :
. .
Page No. : 1/4
MTN7000A3
Description
The MTN7000A3 is a N-channel enhancement-mode MOSFET.
Symbol
MTN7000A3
Outline
TO-92
G：Gate
S：Source
D：Drain
SGD
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
GS
=1M
Ω)
Gate-Source Voltage
---Continuous
---Non–repetitive(tp
≤
50µs)
Continuous Drain Current (Ta=25°C)
Continuous Drain Current (Ta=100°C)
Pulsed Drain Current (Ta=25°C)
Total Power Dissipation (Ta=25°C)
Derate Above 25°C
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient
Lead Temperature, for 10 second Soldering
Note : *1. Pulse Width
≤
300µs, Duty cycle
≤2%
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
D
I
DM
Pd
Tj
Tstg
Rth,ja
T
L
Limits
60
60
±20
±40
200
130
500
400
3.2
-55~+150
-55~+150
312.5
260
Unit
V
V
V
V
mA
mA
mA
mW
mW/°C
°C
°C
°C/W
°C
*1
MTN7000A3
CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics
(Ta=25°C)
Symbol
BV
DSS
V
GS(th)
I
GSS/F
I
GSS/R
I
DSS
I
D(ON)
R
DS(ON)
G
FS
C
iss
C
oss
C
rss
100
-
-
-
-
-
-
-
Min.
60
0.8
Typ.
Max.
3
10
-10
1
5.3
5
-
60
25
5
Unit
V
V
nA
nA
µA
mA
Ω
mS
pF
Spec. No. : C325A3
Issued Date : 2004.02.13
Revised Date :
. .
Page No. : 2/4
75
Test Conditions
V
GS
=0, I
D
=10µA
V
DS
=V
GS
, I
D
=1.0mA
V
GS
=+15V, V
DS
=0
V
GS
=-15V, V
DS
=0
V
DS
=48V, V
GS
=0
V
DS
=10V, V
GS
=4.5V
I
D
=75mA, V
GS
=4.5V
I
D
=75mA, V
GS
=10V
V
DS
=10V, I
D
=200mA
V
DS
=25V, V
GS
=0, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Characteristic Curves
TYPICAL OUTPUT CHARACTERISICS
1.4
1.2
DRAIN CURRENT---ID(A)
1.0
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
7
8
9
10
DRAIN-SOURCE ---VDS(V)
VGS=4V
VGS=8V
DRAIN CURRENT---ID(A)
TYTICAL TRANSFER CHARACTERISTIC
1.4
1.2
VGS=5V
1.0
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
7
8
9
10
GAT E-SOURCE VOLT AGE---VGS(V)
MTN7000A3
CYStek Product Specification
CYStech Electronics Corp.
ST AT IC DRAIN-SOURCE ON-ST AT E
RESIST ANCE vs DRAIN CURRENT
4.0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE--- RDS(on)(ohm)
Spec. No. : C325A3
Issued Date : 2004.02.13
Revised Date :
. .
Page No. : 3/4
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
VS GATE-SOURCE VOLTSAGE
10
STATIC DRAIN-SOURCE ON-STATE
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
DRAIN CURRENT ---ID(A)
VGS=10V
VGS=5V
9
RESISTANCE--- RDS(on)(ohm)
8
7
6
5
4
3
2
1
0
0
5
10
15
20
GAT E-SOURCE VOLT AGE---VGS(V)
ID=57.5m
A
ID=115mA
FORWARD TRANSFER ADM ITTANCE
vs DRAIN CURRENT
1000
FORWARD TRANSFER ADMITTANCE---
GFS(ms)
REVERSE DRAIN CURRENT vs SOURCE-
DRAIN VOLTAGE
1.00
VGS=10V
100
REVERSE DRAIN CURRENT---IDR(A)
Pulsed
0.10
VGS=10V
VGS=0V
10
1
0.001
0.01
0.1
1
0.01
0.00
0.50
1.00
1.50
DRAIN CURRENT ---ID(A)
SWIT CHING
1000
POWER DISSIPATION--PD(W)
SOURCE-DRAIN VOLT AGE---VSD(V)
CHARACT ERIST ICS
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0.1
1
0
Tf
POWER DERATING CURVE
SWITCHING TIMES---(ns)
100
T d(off)
T d(on)
10
Tr
1
0.001
0.01
50
100
150
200
DRAIN CURRENT ---ID(A)
AMBIENT TEMPERATURE---Ta(℃)
MTN7000A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
α
2
Spec. No. : C325A3
Issued Date : 2004.02.13
Revised Date :
. .
Page No. : 4/4
A
B
1
2
3
Marking:
2N7000
α
3
C
D
H
I
E
F
G
Style: Pin 1.Source 2.Gate 3.Drain
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
α
1
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
-
0.0142 0.0220
-
*
0.0500
0.1323 0.1480
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
-
0.36
0.56
-
*
1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
-
*
0.1000
-
*
0.0500
-
*
5°
-
*
2°
-
*
2°
Millimeters
Min.
Max.
0.36
0.56
-
*
2.54
-
*
1.27
-
*
5°
-
*
2°
-
*
2°
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7000A3
CYStek Product Specification
编程基础
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