CYStech Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Spec. No. : C401Q8
Issued Date : 2007.06.13
Revised Date :
Page No. : 1/6
MTDP4953BDYQ8
Description
The MTDP4953BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
•
R
DS(ON)
=42m
Ω
@V
GS
=-10V, I
D
=-5A
R
DS(ON)
=70m
Ω
@V
GS
=-4.5V, I
D
=-4A
•
Simple drive requirement
•
Low on-resistance
•
Fast switching speed
•
Pb-free package
Applications
•
Power management in notebook computer, portable equipment and battery powered systems.
Equivalent Circuit
MTDP4953BDYQ8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MTDP4953BDYQ8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @T
A
=25
°C
Continuous Drain Current @T
A
=70
°C
Pulsed Drain Current
(Note 2)
Total Power Dissipation
(Note 1)
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient
(Note 1)
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
2.
Pulse width
≤300μs,
duty cycle≤2%
Spec. No. : C401Q8
Issued Date : 2007.06.13
Revised Date :
Page No. : 2/6
Symbol
BV
DSS
V
GS
I
D
I
D
I
DM
Pd
Tj
Tstg
Rth,ja
Limits
-30
±20
-5
-4
-20
2
0.02
-55~+150
-55~+150
62.5
Unit
V
V
A
A
A
W
W /
°C
°C
°C
°C/W
(Note 1)
(Note 1)
Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BV
DSS
-30
-
-
V
V
GS
=0, I
D
=-250μA
V
GS(th)
-1
-
-2.5
V
V
DS
=V
GS
, I
D
=-250μA
I
GSS
-
-
±100
nA
V
GS
=±20V, V
DS
=0
I
DSS
-
-
-1
μA
V
DS
=-24V, V
GS
=0
-
-
42
I
D
=-5A, V
GS
=-10V
*R
DS(ON)
mΩ
-
-
70
I
D
=-4A, V
GS
=-4.5V
*G
FS
-
5
-
S
V
DS
=-5V, I
D
=-5A
Dynamic
Ciss
-
582
-
pF
V
DS
=-15V, V
GS
=0, f=1MHz
Coss
-
125
-
Crss
-
86
-
*t
d(ON)
-
9
-
V
DS
=-15V, I
D
=-1A,
*t
r
-
10
-
ns
V
GS
=-10V, R
G
=6
Ω
, R
D
=15
Ω
*t
d(OFF)
-
37
-
*t
f
-
23
-
*Qg
-
11.7
-
V
DS
=-15V, I
D
=-5A,
nC
*Qgs
-
2.1
-
V
GS
=-10V,
*Qgd
-
2.9
-
Source-Drain Diode
*V
SD
-
-0.84
-1.2
V
V
GS
=0V, I
S
=-1.7A
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTDP4953BDYQ8
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C401Q8
Issued Date : 2007.06.13
Revised Date :
Page No. : 3/6
MTDP4953BDYQ8
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C401Q8
Issued Date : 2007.06.13
Revised Date :
Page No. : 4/6
MTDP4953BDYQ8
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C401Q8
Issued Date : 2007.06.13
Revised Date :
Page No. : 5/6
MTDP4953BDYQ8
CYStek Product Specification
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