FMS2028
SP6T GaAs Multi-Band GSM Antenna Switch
F
EATURES
:
•
•
•
•
•
•
Available in die form
Very low Tx Insertion loss
High Tx-Rx isolation >45dB typ. at 1.8GHz
High Tx-Tx isolation >30dB typ. at 1.8GHz
Excellent low control voltage performance
Excellent harmonic performance
Preliminary Datasheet v2.1
F
UNCTIONAL
S
CHEMATIC
:
AN T
R X1
V RX 1
TX 1
V TX 1
TX 2
V TX 2
R X2
V RX 2
R X3
V RX 3
R X4
V RX 4
VM
G
ENERAL
D
ESCRIPTION
:
FMS2028 is a low loss, high power single
pole six throw Gallium Arsenide antenna
switch. The die is fabricated using the
Filtronic FL05 0.5µm switch process
technology that offers leading edge
performance
optimised
for
switch
applications. FMS2028 is designed for use
in dual-, tri- and quad-band GSM handset
antenna switch and RF front-end modules.
T
YPICAL
A
PPLICATIONS
:
•
Suitable for multi-band
GSM/DCS/PCS/EDGE applications
E
LECTRICAL
S
PECIFICATIONS
:
P
ARAMETER
Tx Insertion Loss
Rx Insertion Loss
Return Loss
Isolation
(TX-TX)
Isolation
(TX-RX)
Isolation
(RX-RX)
P
0.1dB
2nd Harmonic Level
3rd Harmonic Level
Switching speed
C
ONDITIONS
0.9 GHz
1.8 GHz
0.9 GHz
1.8 GHz
(1)
M
IN
0
0
0
0
––
26
19.5
42
37
26
20
––
-100
-100
-100
-100
––
––
0.01
0.01
T
YP
0.4
0.41
0.73
1.0
23
28.5
21
47
42
28
22
37
-80
-80
-68
-72
––
––
12
1.3
M
AX
0.55
0.6
1
1.2
––
55
45
55
55
––
––
––
-70
-70
-65
-65
0.3
1
40
4
U
NITS
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBc
dBc
dBc
dBc
µs
µs
µA
µA
0.5 – 2.5 GHz
0.9 GHz
1.8 GHz
0.9 GHz
1.8 GHz
0.5 – 1.0 GHz
1.0 – 2.0 GHz
0.9 GHz, CW
0.9 GHz, Pin = +35 dBm, CW
(2)
1.8 GHz, Pin = +33 dBm, CW
(2)
0.9 GHz, Pin = +35 dBm, CW
(2)
1.8 GHz, Pin = +33 dBm, CW
(2)
10% to 90% RF and 90% to 10% RF, Pin = 0 dBm
50% control to 90% RF and 50% control to 90% RF,
Pin = 0 dBm
Vctrl = 0 / 2.7 V, Pin = 35 dBm, 0.9 GHz
Vctrl = 0 / 2.7 V, Pin = 0 dBm, 1.8 GHz
Control Current
Note 1: T
AMBIENT
= 25°C, Vctrl = 0V/2.7V, Z
IN
= Z
OUT
= 50Ω
Note 2: Measured harmonic values are dependant upon system termination impedances at the harmonic
frequency
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FMS2028
Preliminary Datasheet v2.1
P
REFERRED
A
SSEMBLY
I
NSTRUCTIONS
:
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
The back of the die is not metallised and the
recommended mounting method is by the use
of conductive epoxy. Epoxy is should be
applied to the attachment surface uniformly
and sparingly to avoid encroachment of epoxy
on to the top face of the die and ideally should
not exceed half the chip height.
For
automated dispense Ablestick LMISR4 is
recommended and for manual dispense
Ablestick 84-1 LMI or 84-1 LMIT are
recommended. These should be cured at a
temperature of 150°C for 1 hour in an oven
especially set aside for epoxy curing only. If
possible the curing oven should be flushed
with dry nitrogen.
This part has gold (Au) bond pads requiring
the use of gold (99.99% pure) bondwire. It is
recommended that 25.4µm diameter gold wire
is used. Thermosonic ball bonding is preferred.
A nominal stage temperature of 150°C and a
bonding force of 40g has been shown to give
effective results for 25µm wire. Ultrasonic
energy shall be kept to a minimum. For this
bonding technique, stage temperature should
not be raised above 200°C and bond force
should not be raised above 60g. Thermosonic
wedge bonding and thermocompression
wedge bonding can also be used to achieve
good wire bonds.
Bonds should be made from the die first and
then to the mounting substrate or package.
The physical length of the bondwires should be
minimised especially when making RF or
ground connections.
H
ANDLING
P
RECAUTIONS
:
To avoid damage to
the
devices
care
should be exercised
during
handling.
Proper
Electrostatic
Discharge
(ESD)
precautions should be observed at all stages
of storage, handling, assembly, and testing.
These devices should be treated as Class 1A
(0-500 V) as defined in JEDEC Standard No.
22-A114. Further information on ESD control
measures can be found in MIL-STD-1686 and
MIL-HDBK-263.
A
PPLICATION
N
OTES
& D
ESIGN
D
ATA
:
Application Notes and design data including S-
parameters, noise data and large-signal
models are available on the Filtronic web site.
D
ISCLAIMERS
:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
O
RDERING
I
NFORMATION
:
P
ART
N
UMBER
FMS2028-000-FF
FMS2028-000-WP
FMS2028-000-EB
D
ESCRIPTION
Wafer mounted on film frame
Die in Waffle-pack
(Gel-pak available on request)
Die mounted on evaluation board
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
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