SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996
FEATURES
* Excellent h
FE
characteristics at I
C
=100mA
* Low saturation voltages
COMPLEMENTARY TYPE FMMT458
PARTMARKING DETAIL
558
FMMT558
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation
Operating and Storage Temperature Range
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Collector-Base Breakdown
Voltage
Switching times
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
MAX.
VALUE
-400
-400
-5
-500
-150
-200
500
-55 to +150
UNIT
V
V
V
-100
-100
-0.2
-0.5
-0.9
-0.9
100
100
15
50
5
95
1600
300
MHz
pF
ns
ns
nA
nA
V
V
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-320V; V
+-
=320V
V
EB
=-4V
I
C
=-20mA, I
B
=-2mA *
I
C
=-50mA, I
B
=-6mA *
I
C
=-50mA, I
B
=-5mA *
I
C
=-50mA, V
CE
=-10V *
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V *
I
C
=-100mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
I
C
=-50mA, V
CE
=-100V
I
B1
=5mA, I
B2
=-10mA
UNIT
V
V
V
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
SYMBOL MIN.
V
(BR)CBO
V
BR(CEO)
V
(BR)EBO
I
CBO
; I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
t
on
t
off
-400
-400
-5
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 133
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