Datasheet> 器件分类 > 分立半导体> 二极管> MUR1100S

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MUR1100S: 产品描述ultrafast efficient plastic silicon rectifier voltage: 50 to 1000v current: 1.0A; 产品类别分立半导体二极管; 文件大小91KB，共3页; 制造商Gulf Semiconductor; 官网地址http://www.gulfsemi.com/

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MUR1100S概述

ultrafast efficient plastic silicon rectifier voltage: 50 to 1000v current: 1.0A

MUR1100S规格参数

参数名称	属性值
厂商名称	Gulf Semiconductor
包装说明	O-PALF-W2
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	LOW POWER LOSS
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-204AL
JESD-30 代码	O-PALF-W2
元件数量	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	1 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
最大重复峰值反向电压	1000 V
最大反向恢复时间	0.075 µs
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL

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MUR105S

THRU

MUR1100S

ULTRAFAST EFFICIENT

PLASTIC SILICON RECTIFIER

Voltage: 50 to 1000V

Current: 1.0A

FEATURE

Low power loss

High surge capability

Glass passivated chip junction

Ultra-fast recovery time for high efficiency

High temperature soldering guaranteed

250℃/10sec/0.375″lead length at 5 lbs tension

DO – 41\DO – 204AL

MECHANICAL DATA

Terminal：Plated axial leads solderable per

MIL-STD 202E, method 208C

Case：Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity：color band denotes cathode

Mounting position：any

Dimensions in inches and (millimeters)

MAXIMUM

RATINGS AND ELECTRICAL

CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25° unless otherwise stated,

for capacitive load, derate current by 20%)

Symbol

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current 3/8" lead length at Ta =55°C

Peak Forward Surge Current 8.3ms single

Half sine-wave superimposed on rated load

Maximum Instantaneous Forward Voltage at

Rated forward current

Maximum DC Reverse Current Ta =25°

At rated DC blocking voltage

Ta =125°

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance

Typical Thermal Resistance

Storage

and

Temperature

Note:

1. Reverse Recovery Condition If

=0.5A,

Ir =1.0A, Irr =0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted

MUR

105S

MUR

110S

100

MUR

120S

200

140

200

MUR

130S

300

210

300

MUR

140S

400

280

400

1.0

MUR

160S

600

420

600

MUR

180S

800

560

800

MUR

1100S

1000

700

1000

units

Vrrm

Vrms

Vdc

If(av)

Ifsm

Trr

Rth(ja)

Tstg, Tj

35.0

0.875

1.25

10.0

100.0

-55 to +150

1.75

µA

℃

°C

(Note 2)

(Note 3)

Junction

Operating

MUR1100S相似产品对比

	MUR1100S	MUR110S	MUR105S
描述	ultrafast efficient plastic silicon rectifier voltage: 50 to 1000v current: 1.0A	ultrafast efficient plastic silicon rectifier voltage: 50 to 1000v current: 1.0A	ultrafast efficient plastic silicon rectifier voltage: 50 to 1000v current: 1.0A
厂商名称	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
包装说明	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
其他特性	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS
外壳连接	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95代码	DO-204AL	DO-204AL	DO-204AL
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2
元件数量	1	1	1
端子数量	2	2	2
最高工作温度	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C
最大输出电流	1 A	1 A	1 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM
最大重复峰值反向电压	1000 V	100 V	50 V
最大反向恢复时间	0.075 µs	0.025 µs	0.025 µs
表面贴装	NO	NO	NO
端子形式	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL

MUR1100S

MUR1100S概述

MUR1100S规格参数

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