ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF463
Repetitive voltage up to
Mean forward current
Surge current
4500
V
730
A
10
kA
FINAL SPECIFICATION
apr 97 - ISSUE : 04
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
V
RSM
I
RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
V=VRRM
150
150
150
4500
4600
50
V
V
mA
CONDUCTING
I
I
I
F (AV)
Mean forward current
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
150
730
735
10
500 x1E3
A
A
kA
A²s
V
V
mohm
F (AV)
FSM
I² t
V
FM
V
F(TO)
r
F
Forward current =
1800 A
25
150
150
2.5
1.70
1.000
SWITCHING
t rr
Q rr
I rr
s
V
FR
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
Peak forward recovery
di/dt=
400 A/µs
150
IF=
di/dt=
VR =
600 A
80 A/µs
100 V
250
0.5
60
V
A
150
5.2
650
µs
µC
MOUNTING
R
th(j-h)
T
F
j
Thermal impedance
Operating junction temperature
Mounting force
Mass
Junction to heatsink, double side cooled
37
-30 / 150
11.8 / 13.2
300
°C/kW
°C
kN
g
ORDERING INFORMATION : ARF463 S 45
standard specification
VRRM/100
ARF463 FAST RECOVERY DIODE
FINAL SPECIFICATION
apr 97 - ISSUE : 04
ANSALDO
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
120
100
Tj = 150
°C
80
VFR [V]
60
I
F
40
V
FR
Tj = 25 °C
20
V
F
0
0
200
400
600
di/dt [A/µs]
800
1000
1200
REVERSE RECOVERY CHARGE
Tj = 150 °C
1400
1000 A
REVERSE RECOVERY CURRENT
Tj = 150 °C
700
1000 A
500 A
250 A
1200
500 A
600
1000
250 A
500
Qrr [µC]
600
Irr [A]
0
100
200
di/dt [A/µs]
300
400
800
400
300
400
200
200
100
0
0
0
100
200
di/dt [A/µs]
300
400
ta = Irr / (di/dt)
tb = trr - ta
I
F
d i/d t
ta
tb
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
Irr
Vr
ARF463 FAST RECOVERY DIODE
FINAL SPECIFICATION
apr 97 - ISSUE : 04
ANSALDO
FORWARD CHARACTERISTIC
Tj = 150 °C
SURGE CHARACTERISTIC
Tj = 150 °C
10
2500
9
8
2000
7
Forward Current [A]
1500
ITSM [kA]
1.4
2.4
Forward Voltage [V]
3.4
6
5
4
3
500
2
1
0
0
1
10
n° cycles
100
1000
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
40.0
35.0
30.0
Zth j-h [°C/kW]
25.0
20.0
15.0
10.0
5.0
0.0
0.001
0.01
0.1
t[s]
1
10
100
Distributed by
All the characteristics given in this data sheet are guaranteed only with
clamping force, cleaned and lubricated heatsink, surfaces with flatness <
and roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over
background) and characteristics is reported.
uniform
.03 mm
change
shaded
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
