8mm
PIN PHOTODIODE
Description
Large area planar silicon photodiode mounted
on a two lead PC board substrate. A clear
molded lens is used to increase sensitivity.
Low junction capacitance permits fast
response time.
MID-A841G
Package Dimensions
Unit: inches ( mm )
.310 (7.87)
.300 (7.62)
1.35 (34.3)
MINIMUM
.075 (1.91)
.070 (1.78)
.030
(0.76)
45°
R NOM.
.218 (5.54)
.208 (5.28)
ANODE
.332 (8.43)
.320 (8.13)
.200 (5.08)
NOM.
CATHODE
Features
l
l
l
l
l
High photo sensitivity
Low junction capacitance
High cut-off frequency
Fast switching time
Acceptance viwe angle : 90°
.020
(0.51)
DIA. NOM.
.377 (9.58)
.357 (9.07)
Chip Active Area : 0.017 in
2
(11mm
2
)
Absolute Maximum Ratings
@ T
A
=25 C
Parameter
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
-20 C to + 75 C
-20
o
C to + 75
o
C
260 C for 5 seconds
o
o
o
o
Unit
Unity Opto Technology Co., Ltd.
12/06/2000
MID-A841G
Optical-Electrical Characteristics
Characteristic
Sensitivity @ 10
-8
To 10
-2
W
Temperature Coefficient Of
Sensitivity @ 880nm
Responsivity
Open Circuit Voltage
Dark Current
V=0V, 880nm
H = 100 fc, 2850K
H = 0, V
R
= 10V
Test Conditions
880nm AXIS
Symbol
S
AXIS
TC
S
R
e
V
OC
I
D
TC I
D
R
SH
TC R
SH
C
J
λrange
λ
P
H = 0, I = 0.1mA
RISE 10 - 90%
FALL 90 - 10%
90% OF MAX
70% OF MAX
50% OF MAX
V
BR
t
r
t
f
-
-
-
Min.
0.17
-
0.13
-
-
-
-
-
-
400
-
-
-
-
13
30
35
Type .
0.25
-
0.18
0.33
3
+11
67
-11
85
-
925
150
60
60
18
35
45
Max.
0.28
0.2
0.25
-
30
-
-
-
-
1100
-
-
-
-
26
40
50
@ T
A
=25
o
C
Unit
A/W
%/
o
C
µA
µW/cm
2
V
nA
%/
o
C
MΩ
%/ C
pF
nm
nm
V
nS
o
Dark Current Temperature Coefficient H = 0
Shunt Resistance
R
SH
Temperature Coefficient
Junction Capacitance
Spectral Application Range
Spectral Response-Peak
Breakdown Voltage
Response Time
λ=940nm
R
L
=10K OHMS I=2µA
Angular Response
H = 0, V
F
= 10mV
H = 0, V
F
= 10mV
H = 0, V = 0V,
Freq=1MHZ
DEG
Unity Opto Technology Co., Ltd.
12/6/2000
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