MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
＊Low
Forward Voltage.
＊Low
Switching noise.
＊High
Current Capacity
＊Guarantee
Reverse Avalanche.
＊Guard-Ring
for Stress Protection.
＊Low
Power Loss & High efficiency.
＊150℃
Operating Junction Temperature
＊Low
Stored Charge Majority Carrier Conduction.
＊Plastic
Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
＊
ESD: 8KV(Min.) Human-Body Model
1N5817 thru 1N5819
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERES
20-40 VOLTS
DO-41
＊In
compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
half-wave, single phase,60Hz )
Operating and Storage Junction
Temperature Range
Symbol
V
RRM
V
RWM
V
R
VR
(RMS)
I
O
I
FSM
1N5817
20
1N5818
30
1N5819
40
Unit
V
14
21
1.0
28
V
A
DIM
A
MILLIMETERS
MIN
2.00
25.40
4.10
0.70
MAX
2.70
---
5.20
0.90
25
A
B
C
D
T
J
, T
STG
-65 to +150
℃
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
(I
F
=1.0 Amp)
(I
F
=3.0 Amp)
Maximum Instantaneous Reverse Current
(Rated DC Voltage, T
C
= 25℃)
(Rated DC Voltage, T
C
= 125℃)
Maximum Thermal Resistance Junction to
Case
Typical Junction Capacitance
(Reverse Voltage of 4 volts & f=1 MHz)
Symbol
V
F
1N5817
0.45
0.75
1N5818
0.55
0.87
0.5
10
60
90
80
o
1N5819
0.60
0.90
Unit
V
CASE---
Transfer molded
plastic
OLARITY---
Cathode indicated
polarity band
I
R
mA
R
θJC
C
P
C/W
pF
1N5817 Thru 1N5819
FIG-1 FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT (Amp.)
NSTANTANEOUS FORWARD CURRENT (Amp.)
FIG-2 TYPICAL FORWARD CHARACTERISITICS
1N5817
1N5818-1N5819
CASE TEMPERATURE (℃)
FORWARD VOLTAGE (Volts)
FIG-3 TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT (mA.)
FIG-4 TYPICAL JUNCTION CAPACITANCE
T
j
=75 c
o
JUNCTION CAPACITANCE (
P
F)
T
j
=125
o
1N5817
1N5818-1N5819
T
j
=25 c
o
PERCENT OF RATED REVERSE VOLTAGE (﹪)
REVERSE VOLTAGE (Volts)
FIG-5 PEAK FORWARD SURGE CURRENT
CURRENT (Amp.)
PEAK FORWARD SURGE
NUMBER OF CYCLES AT 60 Hz
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
