TR8 SERIES
SILICON TRIACS
l
l
l
l
8 A RMS, 70 A Peak
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
GT
of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
1
2
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings
over operating case temperature (unless otherwise noted)
RATING
TR8-400-70
TR8-600-70
TR8-700-70
TR8-800-70
SYMBOL
VALUE
400
600
700
800
8
70
80
±1
2.2
0.9
-40 to +110
-40 to +125
230
UNIT
Repetitive peak off-state voltage (see Note 1)
V
DRM
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width
£
200
m
s)
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
TSM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
A
A
A
A
W
W
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak
off-state current
Peak gate trigger
current
V
D
= rated V
DRM
V
supply
= +12 V†
I
GTM
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
V
supply
= +12 V†
V
GTM
Peak gate trigger
voltage
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= -12 V†
† All voltages are with respect to Main Terminal 1.
TEST CONDITIONS
I
G
= 0
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
R
L
= 10
W
T
C
= 110°C
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
t
p(g)
> 20
m
s
2
-12
-9
20
0.7
-0.8
-0.8
0.9
2
-2
-2
2
V
MIN
TYP
MAX
±2
50
-50
-50
mA
UNIT
mA
TR8 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
V
TM
I
H
I
L
dv/dt
dv/dt
(c)
Peak on-state voltage
Holding current
Latching current
Critical rate of rise of
off-state voltage
Critical rise of commu-
tation voltage
I
TM
= ±12 A
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= +12 V†
V
supply
= -12 V†
V
DRM
= Rated V
DRM
V
DRM
= Rated V
DRM
TEST CONDITIONS
I
G
= 50 mA
I
G
= 0
I
G
= 0
(see Note 7)
I
G
= 0
I
TRM
= ±12 A
T
C
= 110°C
T
C
= 85°C
±5
±100
(see Note 6)
Init’ I
TM
= 100 mA
Init’ I
TM
= -100 mA
MIN
TYP
±1.6
5
-9
MAX
±2.1
30
-30
50
-50
UNIT
V
mA
mA
V/µs
V/µs
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t
p
=
£
1 ms, duty cycle
£
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
W
, t
p(g)
= 20
m
s, t
r
=
£
15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
R
q
R
q
JC
JA
MIN
TYP
MAX
1.8
62.5
UNIT
°C/W
°C/W
Junction to case thermal resistance
Junction to free air thermal resistance
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
1000
V
supply
I
GTM
+
+
-
-
+
-
-
+
V
AA
= ± 12 V
V
GT
- Gate Trigger Voltage - V
R
L
= 10
W
t
p(g)
= 20 µs
10
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
V
supply
I
GTM
+
+
-
-
+
-
-
+
V
AA
= ± 12 V
R
L
= 10
W
t
p(g)
= 20 µs
I
GT
- Gate Trigger Current - mA
100
10
1
1
0·1
-60
-40
-20
0
20
40
60
80
100
120
0·1
-60
-40
-20
0
20
40
60
80
100
120
T
C
- Case Temperature - °C
T
C
- Case Temperature - °C
Figure 1.
Figure 2.
TR8 SERIES
SILICON TRIACS
TYPICAL CHARACTERISTICS
HOLDING CURRENT
vs
CASE TEMPERATURE
1000
V
supply
+
-
I
H
- Holding Current - mA
100
V
AA
= ± 12 V
V
GF
- Gate Forward Voltage - V
I
G
= 0
Initiating I
TM
= 100 mA
10
GATE FORWARD VOLTAGE
vs
GATE FORWARD CURRENT
1
10
0·1
1
0·1
-60
-40
-20
0
20
40
60
80
100
120
QUADRANT 1
0·01
0·0001
0·001
I
A
= 0
T
C
= 25 °C
0·01
0·1
1
T
C
- Case Temperature - °C
I
GF
- Gate Forward Current - A
Figure 3.
Figure 4.
LATCHING CURRENT
vs
CASE TEMPERATURE
1000
V
supply
I
GTM
+
+
-
-
100
+
-
-
+
V
AA
= ± 12 V
I
TSM
- Peak Full-Sine-Wave Current - A
100
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
T
C
£
85 °C
I
L
- Latching Current - mA
10
No Prior Device Conduction
Gate Control Guaranteed
10
1
-60
-40
-20
0
20
40
60
80
100
120
1
1
10
100
1000
Consecutive 50-Hz Half-Sine-Wave Cycles
T
C
- Case Temperature - °C
Figure 5.
Figure 6.
TR8 SERIE
S
SILICON TRIACS
TYPICAL CHARACTERISTICS
MAX RMS ON-STATE CURRENT
vs
CASE TEMPERATURE
P
(av)
- Maximum Average Power Dissipated - W
10
I
T(RMS)
- Maximum On-State Current - A
9
8
7
6
5
4
3
2
1
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
32
28
24
20
16
12
8
4
0
0
MAX AVERAGE POWER DISSIPATED
vs
RMS ON-STATE CURRENT
T
J
= 110 °C
Conduction Angle = 360 °
Above 8 A rms
See I
TSM
Figure
2
4
6
8
10
12
14
16
I
T(RMS)
- RMS On-State Current - A
Figure 7.
Figure 8.
PARAMETER MEASUREMENT INFORMATION
V
AC
V
AC
L1
I
TRM
I
MT2
C1
50 Hz
I
MT2
V
MT2
DUT
R
G
R1
I
G
V
MT2
dv/dt
63%
I
G
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
so that the off-state-voltage duration is approximately 800 µs.
10%
V
DRM
Figure 9.
TR8 SERIES
SILICON TRIACS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,90
14,55
1,32
1,23
see Note B
see Note C
6,1
3,5
0,97
0,61
1
2
3
1,70
1,07
14,1
12,7
2,74
2,34
5,28
4,88
2,90
2,40
0,64
0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
