PTB 20248
0.7 Watts, 1465–1513 MHz
Cellular Radio RF Power Transistor
Description
The 20248 is a class A, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 0.7
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
0.7 Watts, 26 Vdc
Class A Characteristics
Surface Mountable
Available in Tape and Reel
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
1.2
Output Power (Watts)
1
0.8
0.6
0.4
0.2
0
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
V
CC
= 26 V
I
CQ
= 0.120 A
f = 1513 MHz
202
48
LO
TC
OD
E
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
55
55
4
0.5
5.4
0.031
–40 to +150
32.3
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20248
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
Conditions
I
B
= 0 A, I
C
= 5 mA, R
BE
= 22
Ω
V
BE
= 0 V, I
C
= 5 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 200 mA
Symbol
V
(BR)CER
V
(BR)CES
V
(BR)EBO
h
FE
Min
55
55
4
20
Typ
—
—
5
—
Max
—
—
—
—
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 26 Vdc, Pout = 0.2 W, I
CQ
= 120 mA, f = 1513 MHz)
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 120 mA, f = 1513 MHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 0.7 W, I
CQ
= 120 mA, f = 1513 MHz
—all phase angles at frequency of test)
Symbol
G
pe
P-1dB
Ψ
Min
10
0.7
—
Typ
12
0.9
—
Max
—
—
5:1
Units
dB
Watts
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 0.7 W, I
CQ
= 120 mA)
Z Source
Z Load
Frequency
MHz
1465
1489
1513
R
6.50
5.70
5.00
Z Source
jX
6.10
7.60
8.90
R
10.60
10.70
10.90
Z Load
jX
37.30
38.90
40.50
Z
0
= 50
Ω
2
5 /19 /9 8
PTB 20248
Typical Performance
Gain vs. Frequency
(as measured in a broadband circuit)
16
15
Gain (dB)
14
V
CC
= 26 V
13
I
CQ
= 0.120 A
Pout = 0.2 W
12
1465
1475
1485
1495
1505
1515
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change
without notice.
LF
© 1997 Ericsson Inc.
EUS/KR 1301-PTB 20248 Uen Rev. A 09-28-98
3
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