e
PTB 20230
45 Watts, 1.8–2.0 GHz
PCN/PCS Power Transistor
Description
The 20230 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts
minimum output power for PEP applications, it is specifically intended
for operation as a final or driver stage in CDMA or TDMA systems.
Ion implantation, nitride surface passivation and gold metallization
ensure excellent device reliability. 100% lot traceability is standard.
45 Watts, 1.8–2.0 GHz
Class AB Characteristics
45% Collector Efficiency at 45 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
60
50
40
30
20
10
0
0
2
4
6
8
10
Output Power (Watts)
2023
0
LOT
COD
E
V
CC
= 26 V
I
CQ
= 250 mA
f = 2.0 GHz
Input Power (Watts)
Package 20234
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
55
55
4.0
7.7
200
1.2
–40 to +150
0.85
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20230
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
V
BE
= 0 V, I
C
= 100 mA
I
B
= 0 A, I
C
= 100 mA, R
BE
= 22
Ω
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 1 A
Symbol
V
(BR)CES
V
(BR)CER
V
(BR)EBO
h
FE
Min
55
55
4.0
20
Typ
—
—
5.0
40
Max
—
—
—
—
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 26 Vdc, P
OUT
= 45 W, I
CQ
= 250 mA, f = 2 GHz)
Gain Compression
(V
CC
= 26 Vdc, I
CQ
= 250 mA, f = 2 GHz)
Input Return Loss
(V
CC
= 26 Vdc, P
OUT
= 45 W, I
CQ
= 250 mA, f = 2 GHz)
Collector Efficiency
(V
CC
= 26 Vdc, P
OUT
= 45 W, I
CQ
= 250 mA, f = 2 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, P
OUT
= 45 W, I
CQ
= 250 mA,
f = 2 GHz—all phase angles at frequency of test)
Symbol
G
pe
P-1dB
Rtn Loss
η
C
Ψ
Min
8.5
45
10
45
—
Typ
9.5
—
—
50
—
Max
—
—
—
—
3:1
Units
dB
Watts
dB
%
—
Typical Performance
P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
11
60
50
40
30
20
2050
Broadband Test Fixture Performance
20
60
Efficiency (%)
16
50
40
- 30
5
-15
20
8
-25
10
Return Loss (dB)
4
1900
1925
1950
1975
-35
0
2000
Output Power & Efficiency
12
70
Gain
10
9
8
7
1750
Gain (dB)
V
CC
= 26 V
I
CQ
= 250 mA
12
Gain (dB)
Gain (dB)
Efficiency (%)
P
OUT
= 45 W
V
CC
= 26 V
I
CQ
= 250 mA
1800
1850
1900
1950
2000
Frequency (MHz)
Frequency (MHz)
2
4/28/98
Return Loss (dB) Efficiency (%)
e
Output Power vs. Supply Voltage
70
-20
-30
PTB 20230
Intermodulation Distortion vs. Output Power
Output Power (Watts)
65
IMD (dBc)
60
55
50
45
40
22
23
24
25
26
27
-40
V
CC
= 26 V
-50
-60
-70
10
20
30
40
50
60
I
CQ
= 250 mA
f
1
= 1999.9 MHz
f
2
= 2000.0 MHz
I
CQ
= 250 mA
f = 2.0 GHz
Supply Voltage (Volts)
Output Power (Watts-PEP)
Power Gain vs. Output Power
11
Power Gain (dB)
10
I
CQ
= 250 mA
I
CQ
= 125 mA
9
I
CQ
= 65 mA
8
V
CC
= 26 V
f = 2.0 GHz
7
0
1
10
100
Output Power (Watts)
Impedance Data
V
CC
= 26 Vdc, P
OUT
= 45 W, I
CQ
= 250 mA
Z Source
Z Load
Frequency
GHz
1.75
1.80
1.85
1.90
1.95
2.00
2.05
R
Z Source
jX
-5.20
-5.70
-5.55
-5.40
-3.80
-1.50
0.00
R
3.20
3.00
2.90
2.77
2.75
2.80
2.95
3.36
3.57
5.14
6.60
8.00
8.95
7.72
Z Load
jX
-3.10
-2.80
-2.50
-2.10
-1.80
-1.40
-1.00
3
Z
0
= 50
Ω
4/28/98
PTB 20230
Typical Scattering Parameters
(V
CE
= 26 V, I
C
= 1.75 A)
e
S11
S21
Ang
-179
-179
-180
179
179
178
178
178
177
177
176
176
175
173
171
169
166
162
176
-171
-177
180
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
S12
Ang
77
70
34
19
11
12
55
130
137
135
132
128
124
119
113
105
92
48
5
-43
-76
-87
S22
Ang
6
23
71
85
89
88
84
83
83
80
74
72
74
75
72
67
57
23
-7
-55
67
94
Mag
0.936
0.946
0.963
0.970
0.972
0.971
0.972
0.975
0.980
0.980
0.984
0.986
0.994
1.00
0.995
0.976
0.952
0.757
0.682
0.825
0.965
0.994
Mag
1.44
1.06
0.397
0.194
0.100
0.046
0.014
0.026
0.048
0.069
0.090
0.113
0.144
0.186
0.247
0.350
0.585
1.02
1.02
0.979
0.526
0.355
Mag
0.002
0.002
0.003
0.004
0.006
0.009
0.011
0.012
0.014
0.017
0.019
0.019
0.020
0.023
0.028
0.034
0.043
0.052
0.038
0.019
0.004
0.009
Mag
0.798
0.828
0.883
0.924
0.943
0.982
1.00
0.952
0.923
0.895
0.898
0.897
0.892
0.885
0.881
0.875
0.856
0.751
0.756
0.848
0.897
0.908
Ang
-172
-174
-174
-175
-177
-179
177
175
174
174
175
174
174
174
173
172
170
171
178
-178
178
177
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
L1
© 1997 Ericsson Inc.
EUS/KR 1301-PTB 20230 Uen Rev. A 09-28-98
4
4/28/98
嵌入式系统
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