PTB 20239
12 Watts, 1465–1513 MHz
Cellular Radio RF Power Transistor
Description
The PTB 20239 is a class AB, NPN, common emitter RF power
transistor intended for 26 Vdc operation from 1465 to 1513 MHz.
Rated at 12 watts minimum output power, it may be used for both CW
and PEP applications. Ion implantation, nitride surface passivation
and gold metallization ensure excellent device reliability. 100% lot
traceability is standard.
12 Watts, 26 Vdc
Class AB Characteristics
Surface Mountable
Available in Tape and Reel
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
20
Output Power (Watts)
16
12
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
CC
= 26 V
I
CQ
= 25 mA
f = 1513 MHz
20
23
9
LO
TC
OD
E
Input Power (Watts)
Package 20232
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4
2.0
33
0.189
–40 to +150
5.3
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20239
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
Conditions
I
B
= 0 A, I
C
= 5 mA, R
BE
= 22
Ω
V
BE
= 0 V, I
C
= 5 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 250 mA
Symbol
V
(BR)CER
V
(BR)CES
V
(BR)EBO
h
FE
Min
50
50
4
20
Typ
—
—
5
—
Max
—
—
—
—
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 26 Vdc, P
OUT
= 10 W, I
CQ
= 25 mA, f = 1513 MHz)
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 25 mA, f = 1513 MHz)
Collector Efficiency
(V
CC
= 26 Vdc, P
OUT
= 12 W, I
CQ
= 25 mA, f = 1513 MHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, P
OUT
= 12 W, I
CQ
= 25 mA,
f = 1513 MHz—all phase angles at frequency of test)
Symbol
G
pe
P-1dB
η
C
Ψ
Min
8
12
40
—
Typ
—
13
—
—
Max
—
—
—
5:1
Units
dB
Watts
%
—
Typical Performance
Gain vs. Frequency
(as measured in a broadband circuit)
11
80
70
Efficiency vs. Output Power
Efficiency (%)
10
60
50
40
30
20
10
0
Gain (dB)
9
8
7
6
1465
V
CC
= 26 V
I
CQ
= 25 mA
P
OUT
= 12 W
1475
1485
1495
1505
1515
V
CC
= 26 V
I
CQ
= 25 mA
f = 1513 MHz
2
4
6
8
10
12
14
Frequency (MHz)
Output Power (Watts)
2
4/30/98
PTB 20239
Impedance Data
(shown for fixed-tuned broadband circuit)
V
CC
= 26 Vdc, P
OUT
= 12 W, I
CQ
= 25 mA
Z Source
Z Load
Frequency
MHz
1465
1490
1515
R
4.84
4.45
4.13
Z Source
jX
4.15
5.33
6.39
R
7.52
7.16
6.89
Z Load
jX
10.26
11.29
12.25
Z
0
= 50
Ω
Typical Scattering Parameters
(V
CE
= 26 V, I
C
= 0.250 A)
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
S11
Mag
0.914
0.920
0.930
0.930
0.924
0.916
0.909
0.901
0.895
0.882
0.867
0.844
0.818
0.785
0.756
0.744
0.768
0.823
0.888
0.941
0.974
0.992
S21
Ang
-179
180
177
175
174
172
171
170
168
167
165
164
163
163
165
168
171
173
172
169
166
162
S12
Ang
103
99
85
77
69
62
56
49
42
35
28
19
9
-2
-16
-32
-51
-70
-88
-105
-121
-135
S22
Ang
34
40
51
56
58
59
59
58
57
56
54
51
48
45
42
42
48
61
72
75
75
72
Mag
6.76
5.58
3.28
2.46
2.02
1.75
1.56
1.43
1.35
1.30
1.28
1.28
1.30
1.32
1.34
1.33
1.26
1.13
0.951
0.766
0.601
0.467
Mag
0.018
0.019
0.025
0.031
0.037
0.044
0.051
0.057
0.064
0.070
0.076
0.082
0.086
0.087
0.084
0.077
0.071
0.072
0.086
0.108
0.131
0.153
Mag
0.597
0.591
0.581
0.581
0.578
0.580
0.580
0.570
0.566
0.561
0.564
0.569
0.584
0.614
0.672
0.755
0.852
0.932
0.980
0.995
0.987
0.972
Ang
172
173
176
177
179
180
179
180
-179
-177
-175
-173
-170
-167
-164
-164
-167
-171
-177
177
172
168
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1997 Ericsson Inc.
EUS/KR 1301-PTB 20239 Uen Rev. A 09-28-98
3
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