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PTB 20237
150 Watts, 470–860 MHz
UHF TV Power Transistor
Description
The 20237 is a class AB, NPN, common emitter UHF TV power
transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated
at 150 watts minimum output power, it may be used for both CW and
PEP applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
470–860 MHz, 28 Volts
Class AB Characteristics
50% Collector Efficiency at 150 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
200
Output Power (Watts)
175
150
125
100
75
50
25
0
0
4
8
12
16
20
24
202
37
LOT
COD
E
V
CC
= 28 V
I
CQ
= 0.800 A Total
f = 860 MHz
Input Power (Watts)
Package 20236
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
55
60
4
25
330
1.89
–40 to +150
0.53
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20237
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
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Conditions
I
C
= 0 A, I
B
= 100 A
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 1 mA
Symbol
V
(BR)CEO
V
(BR)EBO
h
FE
Min
28
3.5
20
Typ
30
5
50
Max
—
—
100
Units
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 28 Vdc, P
OUT
= 150 W, I
CQ
= 800 mA Total,
f = 470, 860 MHz)
Collector Efficiency
(V
CC
= 28 Vdc, P
OUT
= 150 W, I
CQ
= 800 mA Total,
f = 470, 860 MHz)
Intermodulation Distortion
(V
CC
= 28 Vdc, I
CQ
= 800 mA Total, P
OUT
= 100 W(PEP),
f
1
= 855.25 MHz, Vision = -8 dB, f
2
= 859.75 MHz,
Subcarrier = -16 dB, f
3
= 860.75 MHz, Sound = -10 dB)
Load Mismatch Tolerance
(V
CC
= 28 Vdc, P
OUT
= 150 W(PEP), I
CQ
= 800 mA Total,
f
1
= 860.0 MHz, f
2
= 860.1—all phase angles at frequency of test)
Symbol
G
pe
Min
8
Typ
9
Max
—
Units
dB
η
C
50
—
—
%
IMD
—
–44
—
dBc
Ψ
—
—
3:1
—
Typical Performance
Gain vs. Frequency
11
(as measured in a broadband circuit)
10
Gain (dB)
9
V
CC
= 28 V
8
I
CQ
= 0.800 A Total
Pout = 150 W
520
570
620
670
720
770
820
870
7
470
Frequency (MHz)
2
5/6/98
PTB 20237
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Components Layout (not to scale)
Artwork (1 inch
)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1997 Ericsson Inc.
EUS/KR 1301-PTB 20237 Uen Rev. B 09-28-98
4
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