e
PTB 20235
70 Watts, 2.1–2.2 GHz
Wideband CDMA Power Transistor
Description
The 20235 is a class AB, NPN, push-pull RF power transistor intended
for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP
minimum output power, it is specifically intended for operation as a
final stage in Wide CDMA systems. Ion implantation, nitride surface
passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
70 Watts, 2.1–2.2 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
120
Output Power (Watts)
100
80
60
40
20
0
0
4
8
12
16
20
202
LOT
COD
35
E
V
CC
= 26 V
I
CQ
= 150 mA Total
f = 2.2 GHz
Input Power (Watts)
Package 20225 *
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
55
55
3.5
12
320
1.83
–40 to +150
0.547
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
* This package not recommended for class A or CW operation. Two PTB 20245s recommended for CW operation.
1
9/28/98
PTB 20235
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
V
BE
= 0 V, I
C
= 20 mA
I
C
= 0 A, I
E
= 20 mA
V
CE
= 10 V, I
C
= 1.5 A
Symbol
V(
BR)CES
V(
BR)EBO
h
FE
Min
55
3.5
30
Typ
—
4.0
50
Max
—
—
120
Units
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 26 Vdc, P
OUT
= 15 W, I
CQ
= 150 mA, f = 2.2 GHz)
Gain Compression
(V
CC
= 26 Vdc, I
CQ
= 150 mA, f = 2.2 GHz)
Collector Efficiency
(V
CC
= 26 Vdc, P
OUT
= 70 W, I
CQ
= 150 mA, f = 2.2 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, P
OUT
= 70 W(PEP), I
CQ
= 150 mA, f = 2.2 GHz
—at all phase angles)
Symbol
G
pe
P-1dB
η
C
Ψ
Min
7.5
70
—
—
Typ
8.0
—
40
—
Max
—
—
—
5:1
Units
dB
Watts
%
—
Typical Performance
P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Broadband Test Fixture Performance
10
Gain (dB)
8
Efficiency (%)
40
6
50
60
Output Power & Efficiency
10
9
8
Gain (dB)
7
6
120
100
80
Gain
Gain
V
CC
= 26 V
I
CQ
= 150 mA Total
V
CC
= 26 V
4
2
0
2100
Return Loss (dB)
2120
2140
2160
2180
30
-5
20
-15
10
-25
0
2200
60
40
P
OUT
= 70 W
Efficiency (%)
5
2050
2100
2150
2200
20
2250
Frequency (MHz)
Frequency (MHz)
2
9/10/97
Return Loss
I
CQ
= 150 mA Total
Efficiency
e
Output Power vs. Supply Voltage
110
10
PTB 20235
Power Gain vs. Output Power
I
CQ
= 150 mA Total
Power Gain (dB)
9
Output Power (Watts)
100
90
80
70
60
22
23
24
25
26
27
I
CQ
= 75 mA Total
8
I
CQ
= 150 mA Total
f = 2.2 GHz
7
I
CQ
= 38 mA Total
V
CC
= 26 V
f = 2.2 GHz
10
100
6
1
Supply Voltage (Volts)
Output Power (Watts)
Intermodulation Distortion vs. Output Power
-20
V
CC
= 26 V
-25
I
CQ
= 150 mA
f
1
= 2.200 GHz
f
2
= 2.199 GHz
IMD (dBc)
-30
-35
-40
-45
-50
10
20
30
40
50
60
70
80
Output Power (Watts-PEP)
Impedance Data
V
CC
= 26 Vdc, P
OUT
= 70 W, I
CQ
= 150 mA
Z Source
Z Load
Frequency
GHz
2.05
2.10
2.15
2.20
2.25
R
6.18
7.58
8.76
9.16
7.96
Z Source
jX
-6.7
-6.9
-6.2
-4.8
-3.6
3
R
6.4
5.9
5.5
5.0
4.8
Z Load
jX
-5.8
-5.0
-4.1
-3.0
-2.6
8/19/97
PTB 20235
Test Circuit
e
Q1
Block Diagram for f = 2 GHz
Q1
l
1,
l
2,
l
21,
l
22
l
3,
l
4
l
5,
l
6
l
7,
l
8,
l
11,
l
12
l
9,
l
10
l
13,
l
14
l
15,
l
16
l
17,
l
18
l
19,
l
20
PTB 20235 NPN RF Transistor
0.25λ 2GHz Microstrip 50
Ω
0.085λ 2GHz Microstrip 80
Ω
0.067λ 2GHz Microstrip 20
Ω
0.0217λ 2GHz Microstrip 11.7
Ω
0.053λ 2GHz Microstrip 8.15
Ω
0.055λ 2GHz Microstrip 6.7
Ω
0.052λ 2GHz Microstrip 11.45
Ω
0.060λ 2GHz Microstrip 16.9
Ω
0.160λ 2GHz Microstrip 75
Ω
L1, L2
L3, L4
L5, L6
C1, C2
C3-8, C17, C18
C9, C11, C13, C15
C10, C12, C14, C16
R1, R2
T1, T2
Board
6.8 nh SMT Inductor
56 nh SMT Inductor
4 mm. SMT Ferrite
0–4 pF Johanson Piston Trimmer
20 pF (B ATC 100)
0.1
µF
1206
10
µF
SMT Tantalum
10
Ω
SMT
UT 70-50
0.031” G200, Solid Copper
Bottom, AlliedSignal
Placement Diagram (not to scale)
4
9/10/97
e
PTB 20235
Artwork (1 inch
)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change
without notice.
L3
© 1997 Ericsson Inc.
EUS/KR 1301-PTB 20235 Uen Rev. B 09-28-98
5
9/28/98
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