BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPT-NP23C2
SIDE- LOOK PACKAGE
PHOTOTRANSISTOR
●
Features
1.
2.
3.
Wide range of collector current.
High sensitivity.
Low cost plastic package.
2.5(.098)
1.7(.067)
●
Package Dimensions:
3.8(.150)
4.0(.157)
4.6(.181)
1.6(.063)
4.5(.177)
2.9(.114)
1.8(.071)
0.65(.026)
1.5(.059)
4. Lens Appearance: Water Clear.
5. This product doesn't contain restriction
substance, comply ROHS standard
14.0(.551) MIN.
0.5(.020)
●
Description
The BPT-NP23C2 is a NPN silicon phototransistor
mounted in a lensed ,water clear plastic package .
The lensing effect of the package allows an
acceptance half view angle of 50∘that is
measured from the optical axis to the half
power point .
NOTES:
1. Emitter
2. Collector
1.0(.039) MIN.
1
2
0.5(.019)
2.54(.100)
1.All dimensions are in millimeters (inches).
2.Tolerance is ±0.25mm (0.01’’) unless otherwise specified.
3.Lead spacing is measured where the leads emerge from the package
4.Specifications are subject to change without notice
●
Absolute Maximum Ratings(Ta=25℃)
Parameter
Power Dissipation
Collector- Emitter Voltage
Emitter- Collector Voltage
Operating Temperature
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
100
30
5
-45℃~+85℃
-45℃~+100℃
260℃ for 5 seconds
Unit
mW
V
V
Rev:2.2
Page1 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPT-NP23C2
●
Electrical Characteristics
(TA=25℃ unless otherwise noted)
PARAMETER
Collector- Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector- Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark Current
Light Current
SYMBOL
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
T
r
T
f
I
d
I
C (ON)
MIN
30
5
-
-
-
-
-
TYP
-
-
-
25
25
-
13
MAX
-
-
0.5
-
-
100
-
UNITS
V
V
V
μS
nA
mA
TEST CONDITIONS
I
C
=1 mA
Ee=0mW/cm
2
I
R
=0.1mA Ee=0 mW/cm
2
I
C
=0.1 mA Ee=1.0mW/cm
2
V
CE
=5V R
L
=1KΩ
F=100HZ
V
CE
=10V E
e
=0 mW/cm
2
V
CE
=5V E
e
=1.0mW/cm
2
●
Typical Optical-Electrical Characteristic Curves
(uA)
10000
1000
FIG.1 Dark Current Vs.
Ambient Temperature
(mW)
120
100
Power Dissipation Pd
80
60
40
20
0
FIG.2 Power Dissipation Vs.
Ambient Temperature
100
Dark Current
10
1
0.1
0.01
0
20
60 80 100
40
Ambient Temperature
120 (°C)
-25
0
25
50 75 100
Ambient Temperature
125 (°C)
FIG.3 Rise And Fall Time Vs.
Load Resistance
(us)
20
Vcc=5V
FIG.4 Relative Collector Current Vs.
Irradiance
2.5
Relative Collector Current
Vce=5V
16
Rise and Fall Time
12
8
4
0
F=100Hz
Tf
Tr
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0 2.5
2
3.0 (mW/cm )
0
0.2
0.4
0.6
0.8
1.0 (K )
Irradiance
Load Resistance
Rev:2.2
Page2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPT-NP23C2
●
Tapping and packaging specifications(Units: mm)
●
Packaging Bag Dimensions
Notes:
1、1000pcs per bag, 8Kpcs per box.
2、All dimensions are in millimeters(inches).
3、Specifications are subject to change without notice.
Rev:2.2
Page3 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPT-NP23C2
Phototransistor Specification
Commodity: Phototransistor
Collector Current Bin Limits (At 1mW/ cm
2
)
BIN CODE
P8
P9
P10
P11
P12
P13
Min.(mA)
0.799
0.985
1.050
1.250
1.400
1.550
Max.(mA)
0.985
1.050
1.250
1.400
1.550
1.700
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