BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPD-RQ0ADY-A
For AB
SIDE- LOOK PACKAGE
PIN PHOTO DIODE
Features
1. Wide receiving angle
2. Linear response vs. irradiance
3. Fast switching time
4. Side-looking Package ideal for space
limited applications
5. Lens Appearance: Black
●
Package Dimensions:
5.0
±
0.1
(.197
±
.004)
4.3
±
0.2
(.169
±
.008)
6.5
±
0.2
(.256
±
.008)
4.0
±
0.5
(.157
±
.020)
15.0(.591) MIN.
Description
The BPD-RQ09DY-Adevice consists
of a PIN silicon photodiode molded in
a
Black
epoxy package which allows
spectral response
infrared light wavelengths. The wide
receiving angle provides relatively even
reception over a large area. The
side-looking package is designed for
easy PC board mounting. This photodiode
is mechanically and spectrally matched to
BRIGHT’s GaAs and GaAlAs series of infrared
emitting diodes.
NOTES:
?0.5(.020)
1.0(.039) MIN.
2.54(.100)
1
2
3.8
±
0.1
(.150
±
.004)
1. Cathode
2. Anode
1
2
1.All dimensions are in millimeters (inches).
2.Tolerance is ±0.25mm (0.01”) unless otherwise specified.
3.Lead spacing is measured where the leads emerge from the package
4. Specifications are subject to change without notice
Absolute Maximum Ratings(Ta=25℃)
Parameter
Power Dissipation
Reverse Breakdown Voltage
Operating Temperature
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
100
60V
-45℃~+85℃
-45℃~+100℃
Unit
mW
260℃ for 5 seconds
REV.2.0
Page:1 of 2
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPD-RQ0ADY-A
For AB
Electrical Characteristics
(TA=25℃ unless otherwise noted)
PARAMETER
Reverse Light Current
Reverse Dark Current
Reverse Break down Voltage
Forward Voltage
Total Capacitance
Rise Time/ Fall Time
SYM
BOL
I
L
I
D
V
(BR)
V
F
C
T
tr/tf
MIN
-
-
30
-
-
-
TYP
12
-
-
-
25
50
MAX
-
30
-
1.2
-
-
UNITS
µA
nA
V
V
PF
ns
TEST CONDITIONS
V
R
=5V.Ee=5mW/cm
2
V
R
=30V.Ee=0
I
R
=100µA
I
F
=1mA
V
R
=20V.Ee=0,f=1.0MHZ
V
R
=20V,λ=940nm.RL=50Ω
Typical Optical-Electrical Characteristic Curves
Relative Response vs.
Wavelength
Relative Output Current
Coupling Characteristics
VR=5V
IF=20mA
Relative Response
Wavelength
Distance Between Lens Tips-inches
Normalized Light Current
TA=25
℃
Ee=0mW/cm
2
f=1MHZ
Normalized Dark Current
VR=5V
λ
=935nm
Normalized to
TA=25 c
Light Current
TA=25
°
C
λ
=935nm
Normalized to VR=5V
Dark Cuttent
Reverse Voltage
Reverse Voltage
Ambient Temperature
Light Current vs. Angular
Displacement
Light Current vs. lrradiance
Switching Time Test Circuit
IL-light Current-uA
Normalized Current
VR=5V
TA=25
°
C
λ
=935nm
IF
VR
OUT
Note:
See Above For.
Conditions
RL
Test Conditions
λ
=935nm
VR=5V
Distance Lens to
Lens=1.5inches
lrradiance-mW/cm
2
Angular Displacement-Deg
REV.2.0
Page:2 of 2
Normalized Light Current
Normalized Light Current vs
Reverse Voltage
Total Capacitance vs
Reverse Voltage
Normalized Light and Dark
Current vs Ambient Temperture
Total Capacitance
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPD-RQ0ADY-A
For AB
Photo Diode Specification
Commodity: Photo diode
Light Current Bin Limits (Vr=5V)
BIN CODE
A
Min.(uA)
5.5
Max.( uA)
18.5
B
16.5
22.5
C
20.5
43.5
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