NTE2389
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Drain–Source Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain–Gate Voltage (R
GS
= 20kΩ), V
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain Current, I
D
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152A
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V
Maximum Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Maximum Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2°C/W
Typical Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Static Ratings
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Drain–Source On–State Resistance
Dynamic Ratings
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
g
fs
C
iss
C
oss
C
rss
I
D
= 20A, V
DS
= 25V
V
DS
= 25V, V
GS
= 0, f = 1MHz
8
–
–
–
13.5
560
300
–
750
400
mhos
pF
pF
pF
1650 2000
BV
DSS
V
GS(th)
I
DSS
I
GSS
I
D
= 0.25mA, V
GS
= 0
I
D
= 1mA, V
DS
= V
GS
V
DS
= 60V,
V
GS
= 0
T
J
= +25°C
T
J
= +125°C
60
2.1
–
–
–
–
–
3.0
1
0.1
10
40
–
4.0
10
1.0
100
45
V
V
µA
mA
nA
mΩ
Symbol
Test Conditions
Min
Typ
Max
Unit
V
GS
=
±30V,
V
DS
= 0
R
DS(on)
I
D
= 20A, V
GS
= 10V
Electrical Characteristics (Cont’d):
(T
A
= +25°C unless otherwise specified)
Parameter
Dynamic Ratings (Cont’d)
Turn–On Time
Turn–Off Time
Internal Drain Inductance
t
d (on)
t
r
t
d (off)
t
f
L
d
Measured from contact screw
on tab to center of die
Measured from drain lead 6mm
from package to center of die
Internal Source Inductance
L
s
Measured from source lead
6mm from package to source
bond pad
V
CC
= 30V, V
GS
= 10V,
I
D
= 3A, R
GS
= 50Ω
Ω
–
–
–
–
–
–
–
25
60
125
100
3.5
4.5
7.5
40
90
160
130
–
–
–
ns
ns
ns
ns
nH
nH
nH
Symbol
Test Conditions
Min
Typ
Max
Unit
Reverse Diode
Continuous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
DR
I
DRM
V
SD
t
rr
Q
rr
I
F
= 41A, V
GS
= 0
I
F
= 41A, V
GS
= 0, V
R
= 30V
–di
F
/dt = 100A/µs
–
–
–
–
–
–
–
1.4
60
0.3
41
164
2.0
–
–
A
A
V
ns
µC
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab
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