Pb Free Plating Product
ISSUED DATE :2005/03/08
REVISED DATE :
GU85T 08
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
80V
13m
75A
The GU85T08 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Description
Features
Package Dimensions
REF.
A
b
L4
c
L3
L1
E
Millimeter
REF.
Min.
Max.
4.40
4.80
c2
0.76
1.00
b2
0.00
0.30 B D
0.36
0.5
e
1.50 REF.
L
2.29
2.79
9.80
10.4
L2
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
8.6
9.0
2.54 REF.
14.6
15.8
0˚
8˚
1.27 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
3
Avalanche Current
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
E
AS
I
AR
Tj, Tstg
Ratings
80
f 20
75
48
260
138
1.11
450
30
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
0.9
62
Unit
/W
/W
GU85T08
Page: 1/4
ISSUED DATE :2005/03/08
REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min.
80
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.09
-
70
-
-
-
-
-
63
23
38
30
100
144
173
6300
670
350
1.1
Max.
-
-
3.0
-
D
100
10
100
13
18
100
-
-
-
-
-
-
10080
-
-
1.7
Ł
pF
ns
nC
Unit
V
V/ :
V
S
nA
uA
uA
mŁ
Test Conditions
V
GS
=0, I
D
=1mA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=45A
20V
V
GS
= D
V
DS
=80V, V
GS
=0
V
DS
=64V, V
GS
=0
V
GS
=10V, I
D
=45A
V
GS
=4.5V, I
D
=25A
I
D
=45A
V
DS
=64V
V
GS
=4.5V
V
DS
=40V
I
D
=45A
V
GS
=10V
R
G
=10 Ł
R
D
=0.89 Ł
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Symbol
BV
DSS
BV
DSS
/
Tj
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=
150 :
)
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Symbol
V
SD
T
rr
Q
rr
Min.
-
-
-
Typ.
-
47
86
Max.
1.3
-
-
Unit
V
ns
nC
Test Conditions
I
S
=45A, V
GS
=0V
I
S
=20A, V
GS
=0V
dI/dt=100A/ s
Reverse Recovery Charge
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
3. Staring Tj=25 : , V
DD
=30V, L=1mH, R
G
=25 Ł , I
AS
=30A.
GU85T08
Page: 2/4
ISSUED DATE :2005/03/08
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GU85T08
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4
ISSUED DATE :2005/03/08
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GU85T08
Page: 4/4
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