CORPORATION
GD421SD
Description
Package Dimensions
ISSUED DATE :2005/05/20
REVISED DATE :
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 4 0 V, C U R R E N T 0 . 1 A
The GD421SD is designed for low power rectification.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.85
1.05
0
0.10
0.80
1.00
1.15
1.45
1.60
1.80
2.30
2.70
REF.
L
b
c
Q1
Millimeter
Min.
Max.
0.20
0.25
0.10
0.40
0.40
0.18
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
V
RRM
V
RPS
V
DC
I
FSM
C
J
Io
PD
Ratings
+125
-40 ~ +125
40
28
40
1.0
6.0
0.1
225
V
V
V
A
pF
A
mW
Unit
Characteristics
Parameter
at Ta = 25 :
Symbol
V
(BR)R
V
F(1)
V
F(2)
I
R
Min.
40
-
-
-
Typ.
-
-
-
-
Max.
-
340
550
30
Unit
V
mV
mV
A
IR=50 A
IF=10mA
IF=100mA
VR=10V
Test Conditions
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
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CORPORATION
Characteristics Curve
ISSUED DATE :2005/05/20
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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