Pb Free Plating Product
ISSUED DATE :2006/01/23
REVISED DATE :
GT2531
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
N-CH BV
DSS
16V
N-CH
R
DS(ON)
58m
N-CH
I
D
3.5A
P-CH BV
DSS
-16V
N-CH
R
DS(ON)
125m
N-CH
I
D
-2.5A
The GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial surface mount applications.
Features
*Low Gate Change
*Low On-resistance
*RoHS Compliant
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.60
1.40
0.30
0
0°
Max.
3.10
3.00
1.80
0.55
0.10
10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
N-channel P-channel
Unit
V
V
A
A
A
W
W/ :
:
16
±8
3.5
2.8
10
1.14
0.01
-16
±8
-2.5
-2.0
-10
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rthj-a
Value
110
Unit
: /W
GT2531
Page: 1/7
ISSUED DATE :2006/01/23
REVISED DATE :
N-Channel Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
16
-
0.2
-
-
-
-
-
Typ.
-
0.01
-
9
-
-
-
-
-
-
7
0.6
2
6
11
17
3
360
50
40
1.4
Max.
-
-
1.0
-
±100
1
25
58
70
85
12
-
-
-
-
-
-
580
-
-
2.0
Unit
V
V/ :
V
S
nA
uA
Ua
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=3A
V
GS
= ± 8V
V
DS
=16V, V
GS
=0
V
DS
=12V, V
GS
=0
V
GS
=4.5V, I
D
=3A
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
2
R
DS(ON)
-
-
m
V
GS
=2.5V, I
D
=2A
V
GS
=1.8V, I
D
=1A
I
D
=3A
V
DS
=10V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
V
GS
=5V
R
G
=3.3
R
D
=10
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
-
-
-
-
-
-
-
-
-
-
-
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
Min.
-
Typ.
-
Max.
1.3
Unit
V
Test Conditions
I
S
=0.9A, V
GS
=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board, t 5sec; 180 : /W when mounted on Min. copper pad.
GT2531
Page: 2/7
ISSUED DATE :2006/01/23
REVISED DATE :
P-Channel Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
-16
-
-0.2
-
-
-
-
-
Typ.
-
0.01
-
5
-
-
-
-
-
-
6
0.8
2
7
20
23
24
370
70
60
8
Max.
-
-
-1.0
-
±100
-1
-25
125
155
200
10
-
-
-
-
-
-
600
-
-
12
Unit
V
V/ :
V
S
nA
uA
uA
Test Conditions
V
GS
=0, I
D
=-250uA
Reference to 25 : , I
D
=-1mA
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-2A
V
GS
= ± 8V
V
DS
=-16V, V
GS
=0
V
DS
=-12V, V
GS
=0
V
GS
=-4.5V, I
D
=-2A
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
2
R
DS(ON)
-
-
m
V
GS
=-2.5V, I
D
=-1.6A
V
GS
=-1.8V, I
D
=-1A
I
D
=-2A
V
DS
=-10V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-1A
V
GS
=-5V
R
G
=3.3
R
D
=10
V
GS
=0V
V
DS
=-15V
f=1.0MHz
f=1.0MHz
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
-
-
-
-
-
-
-
-
-
-
-
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
Min.
-
Typ.
-
Max.
-1.3
Unit
V
Test Conditions
I
S
=-0.9A, V
GS
=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board, t 5sec; 180 : /W when mounted on Min. copper pad.
GT2531
Page: 3/7
ISSUED DATE :2006/01/23
REVISED DATE :
Characteristics Curve N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GT2531
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 4/7
ISSUED DATE :2006/01/23
REVISED DATE :
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
GT2531
Fig 12. Gate Charge Waveform
Page: 5/7
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