SM5021 series
NIPPON PRECISION CIRCUITS INC.
Crystal Oscillator Module ICs
OVERVIEW
The SM5021 series are crystal oscillator module ICs
fabricated in NPC’s Molybdenum-gate CMOS, that
incorporate high-frequency, low current consump-
tion oscillator and output buffer circuits. Highly
accurate thin-film feedback resistors and high-fre-
quency capacitors are built-in, eliminating the need
for external components to make a stable 3rd-har-
monic oscillator.
FEATURES
s
s
s
s
s
3rd overtone oscillation
Capacitors CG, CD built-in
Inverter amplifier feedback resistor built-in
(A
×
, B
×
series)
TTL input level
4 mA (V
DD
= 2.7 V) drive capability
8 mA (V
DD
= 4.5 V) drive capability
s
s
s
s
s
Output three-state function
2.7 to 5.5 V supply voltage (A
×
, K
×
series)
4.5 to 5.5 V supply voltage (B
×
, L
×
series)
Oscillator frequency output
6-pin SOT (SM5021
××
H)
Chip form (CF5021
××
)
SERIES CONFIGURATION
Supply voltage
Chip
SM5021AAH
SM5021ABH
SM5021ACH
SM5021ADH
SM5021AEH
SM5021BAH
SM5021BBH
SM5021BCH
SM5021BDH
SM5021KDH
SM5021KEH
SM5021LDH
4.5 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 3.6
4.5 to 5.5
4.5 to 5.5
4.5 to 5.5
4.5 to 5.5
2.7 to 5.5
2.7 to 3.6
4.5 to 5.5
SOT
4.5 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
×
4.5 to 5.5
4.5 to 5.5
4.5 to 5.5
4.5 to 5.5
2.7 to 5.5
2.7 to 3.6
4.5 to 5.5
Recommended
operating frequency
range (MHz)
3V
×
22 to 30
30 to 40
40 to 50
50 to 70
×
×
×
×
22 to 50
50 to 70
×
5V
22 to 30
30 to 43
43 to 55
55 to 70
×
22 to 30
30 to 43
43 to 55
55 to 70
22 to 70
×
22 to 70
Built-in
capacitance
(pF)
C
G
8
8
8
8
8
8
8
8
8
8
8
8
C
D
15
15
15
15
12
15
15
15
15
15
12
15
1
1
2
3
4
1
1
2
3
3
4
3
6.0
3.3
3.9
2.7
2.7
6.0
3.3
3.9
2.7
–
–
–
fo
fo
fo
fo
fo
fo
fo
fo
fo
fo
fo
fo
CMOS
CMOS
CMOS
CMOS
CMOS
TTL
TTL
TTL
TTL
CMOS
CMOS
TTL
High impedance
High impedance
High impedance
High impedance
High impedance
High impedance
High impedance
High impedance
High impedance
High impedance
High impedance
High impedance
Version
1
gm
ratio
Rf
(k
Ω
)
Output
frequency
Output
level
Standby output
state
1. Chip form devices have designation CF5021
××
.
ORDERING INFORMATION
Devicez
SM5021
××
H
CF5021
××
–2
Package
6-pin SOT
Chip form
NIPPON PRECISION CIRCUITS—1
SM5021 series
PACKAGE DIMENSIONS
(UNIT : mm)
•
6-pin SOT
2.9
±
0.2
1.6
−
0.1
2.8
−
0.3
+
0.2
+
0.2
0.45
±
0.15
0.15
−
0.05
1.1
±
0.1
1.9
±
0.2
0.95
+
0.1
0.1
0.4
±
0.1
0.12
M
0 to 0.15
NIPPON PRECISION CIRCUITS—2
SM5021 series
PAD LAYOUT
(Unit :
µ
m)
PINOUT
(Top View)
Q
XT
HA5021
(1000,800)
VDD
INH
XT
VSS
1
6
XT
VDD
Q
1
2
3
5
4
(0,0) VSS
XT INH
Chip size: 1.00
×
0.80 mm
Chip thickness: 220 ± 30 µm
Chip base: V
DD
level
PIN DESCRIPTION and PAD DIMENSIONS
Number
1
2
3
4
5
6
Name
INH
XT
VSS
Q
VDD
XT
I/O
I
I
–
O
–
O
Description
Output state control input. High impedance when LOW. Pull-up resistor built in
Amplifier input.
Ground
Output. Output frequency (f
O
)
Supply voltage
Amplifier output.
Crystal oscillator connection pins.
Crystal oscillator connected between XT and XT
Crystal oscillator connection pins.
Crystal oscillator connected between XT and XT
Pad dimensions [µm]
X
771
553
150
150
796
836
Y
150
150
140
649
409
636
BLOCK DIAGRAM
VDD VSS
XT
C
G
C
D
R
f
XT
Q
INH
NIPPON PRECISION CIRCUITS—3
SM5021 series
SPECIFICATIONS
Absolute Maximum Ratings
V
SS
= 0 V
Parameter
Supply voltage range
Input voltage range
Output voltage range
Operating temperature range
Storage temperature range
Output current
Power dissipation
Symbol
V
DD
V
IN
V
OUT
T
opr
Chip form
T
stg
I
OUT
P
D
6-pin SOT
6-pin SOT
Condition
Rating
−
0.5 to 7.0
−
0.5 to V
DD
+ 0.5
−
0.5 to V
DD
+ 0.5
−
40 to 85
−
65 to 150
−
55 to 125
13
250
Unit
V
V
V
°
C
°
C
mA
mW
Recommended Operating Conditions
V
SS
= 0 V, f
≤
70MHz, C
L
≤
15pF
Rating
Parameter
Supply voltage
Input voltage
Operating temperature
Symbol
V
DD
V
IN
T
OPR
Condition
min
2.7
V
SS
−
20
typ
–
–
–
max
5.5
V
DD
80
V
V
°
C
Unit
Note: Recommended operating conditions will change in accordance with operating frequency, load capacitance, or power dissipation.
NIPPON PRECISION CIRCUITS—4
SM5021 series
Electrical Characteristics
3 V operation: AA, AB, AC, AD, AE series/ KD, KE series
V
DD
= 2.7 to 3.6 V, V
SS
= 0 V, Ta =
−
20 to 80
°
C unless otherwise noted.
Parameter
Symbol
Condition
SM5021
×
AH, CF5021
×
A
SM5021
×
BH, CF5021
×
B
SM5021
×
CH, CF5021
×
C
SM5021
×
DH, CF5021
×
D
SM5021
×
EH, CF5021×E
SM5021
×
AH, CF5021
×
A
SM5021
×
BH, CF5021
×
B
SM5021
×
CH, CF5021
×
C
SM5021
×
DH, CF5021
×
D
SM5021
×
EH, CF5021×E
–
–
2.0
–
SM5021A×H, CF5021A×
SM5021K×H, CF5021K×
–
25
SM5021×AH, CF5021
×
A
Feedback resistance
(A
×
series only)
SM5021
×
BH, CF5021
×
B
R
f
Measurement cct 5
SM5021
×
CH, CF5021
×
C
SM5021
×
DH, CF5021
×
D
SM5021
×
EH, CF5021
×
E
C
G
Built-in capacitance
Design value, determined by the internal wafer pattern
SM5021
×
AH, CF5021
×
A
SM5021
×
BH, CF5021
×
B
SM5021
×
CH, CF5021
×
C
SM5021
×
DH, CF5021
×
D
SM5021
×
EH, CF5021
×
E
5.1
2.8
3.3
2.3
7.44
–
–
–
–
13
100
6.0
3.3
3.9
2.7
8
10
10
–
0.5
25
250
6.9
3.8
4.5
3.1
8.56
pF
k
Ω
µA
V
V
mA
k
Ω
Rating
min
typ
max
Unit
HIGH-level output voltage
V
OH
Q: Measurement cct 1, V
DD
= 2.7 V,
I
OH
= 4 mA
Q: Measurement cct 1, V
DD
= 2.7 V,
I
OH
= 8 mA
Q: Measurement cct 2, V
DD
= 2.7 V,
I
OL
= 4 mA
Q: Measurement cct 2, V
DD
= 2.7 V,
I
OL
= 8 mA
2.1
2.4
–
V
LOW-level output voltage
V
OL
–
0.3
0.4
V
Output leakage current
HIGH-level input voltage
LOW-level input voltage
Current consumption
INH pull-up resistance
I
Z
V
IH
V
IL
I
DD
R
UP
Q: Measurement cct 2, V
DD
= 3.3 V, INH = LOW, V
OH
= V
DD
Q: Measurement cct 2, V
DD
= 3.3 V, INH = LOW, V
OL
= V
SS
INH
INH
INH = open, Measurement cct 3,
load cct 1, C
L
= 15 pF,
70 MHz crystal oscillator
Measurement cct 4
C
D
Design value, determined by the
internal wafer pattern
13.95
15
16.05
pF
11.16
12
12.84
NIPPON PRECISION CIRCUITS—5
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