Data Sheet
DUAL OPERATIONAL AMPLIFIERS
General Description
The AZ4558 consists of two high performance opera-
tional amplifiers. The IC features high gain, high input
resistance, excellent channel separation, wide range of
operating voltage and internal frequency compensa-
tion. It can work with
±18V
maximum power supply
voltage.
The AZ4558 is specifically suitable for applications in
differential-in, differential-out as well as in potential-
metric amplifiers and where gain and phase matched
channels are mandatory.
The AZ4558 is available in DIP-8 and SOIC-8 pack-
age.
AZ4558
Features
·
·
·
·
·
·
Internal Frequency Compensation
Large Signal Voltage Gain with 100 dB Typical
High Input Resistance with 5MΩ Typical
Maximum Power Supply Voltages:
±18V
Compatible with NJM 4558
Low Input Voltage Noise with
10nV/ Hz
at 1KHz
Applications
·
·
Audio AC-3 Decoder System
Audio Amplifier
SOIC-8
DIP-8
Figure 1. Package Types of AZ4558
Jul. 2006 Rev. 1. 2
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BCD Semiconductor Manufacturing Limited
Data Sheet
DUAL OPERATIONAL AMPLIFIERS
Pin Configuration
AZ4558
M Package/P Package
(SOIC-8/DIP-8)
OUTPUT 1
INPUT 1-
INPUT 1+
V
EE
1
2
3
4
8
7
6
5
V
CC
OUTPUT 2
INPUT 2-
INPUT 2+
Top View
Figure 2. Pin Configuration of AZ4558
Functional Block Diagram
3.1 KΩ
V
CC
150 Ω
- Input
+ Input
25 Ω
Output
25 Ω
10pF
87
pF
7.1
KΩ
7.1
KΩ
480
Ω
4.2 KΩ
36 KΩ
V
EE
Figure 3. Representative Schematic Diagram of AZ4558 (Each Amplifier)
Jul. 2006 Rev. 1. 2
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BCD Semiconductor Manufacturing Limited
Data Sheet
DUAL OPERATIONAL AMPLIFIERS
Ordering Information
AZ4558
AZ4558
-
E1: Lead Free
Blank: Tin Lead
TR: Tape and Reel
Blank: Tube
Circuit Type
Package
M: SOIC-8
P: DIP-8
Package
Temperature
Range
-40 to 85
o
C
-40 to 85
o
C
Part Number
Tin Lead
AZ4558M
AZ4558MTR
AZ4558P
Lead Free
AZ4558M-E1
AZ4558MTR-E1
AZ4558P-E1
Marking ID
Tin Lead
4558M
4558M
AZ4558P
Lead Free
4558M-E1
4558M-E1
AZ4558P-E1
Packing Type
Tube
Tape & Reel
Tube
SOIC-8
DIP-8
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Jul. 2006 Rev. 1. 2
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BCD Semiconductor Manufacturing Limited
Data Sheet
DUAL OPERATIONAL AMPLIFIERS
Absolute Maximum Ratings (Note 1)
Parameter
Power Supply Voltage
Input Voltage
Differential Input Voltage
Operating Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering 10s)
Power Dissipation
Symbol
V
CC
V
EE
V
I
V
ID
T
J
T
STG
T
L
DIP-8
P
D
SOIC-8
Value
+20
-20
±15
±30
150
-65 to 150
260
800
500
mW
V
V
V
o
o
o
AZ4558
Unit
C
C
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-
imum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Operating Temperature Range
Min
±4
-40
Max
±18
85
Unit
V
o
C
Jul. 2006 Rev. 1. 2
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BCD Semiconductor Manufacturing Limited
Data Sheet
DUAL OPERATIONAL AMPLIFIERS
Electrical Characteristics
Operating Conditions: V
CC
=
+
15V, V
EE
=-15V, T
A
=25
o
C unless otherwise specified.
Parameter
Input Offset Voltage
Input Bias Current
Input Offset Current
Input Resistance
Supply Current
Large Signal Voltage Gain
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Source
Output Current
Sink
R
L
=
∞,
Over full temperature
V
CM
=0V
V
CM
=0V
Conditions
AZ4558
Min
Typ
0.5
25
2.5
Max
6
250
100
5.7
Unit
mV
nA
nA
MΩ
mA
dB
dB
dB
mA
mA
V
V/µS
nV
Hz
0.3
range
R
L
≥2Κ,
V
O
=
±
10V
R
S
≤10kΩ
R
S
≤10kΩ
V+=1V, V-=0V, V
O
=
2
V
V+=0V, V-=1V, V
O
=
2
V
R
L
≥
2KΩ
R
L
≥
10KΩ
R
L
=2KΩ, C
L
=100pF
R
S
=50Ω, f=1KHz
R
L
=2KΩ, f=10KHz
5
3.3
85
80
80
100
92
95
50
50
±10
±12
±13
±14
1.3
10
3.4
Output Voltage Swing
Slew Rate
Equivalent Input Noise Voltage Density
Gain Bandwidth Product
MHz
Jul. 2006 Rev. 1. 2
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BCD Semiconductor Manufacturing Limited
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