6N138/ 6N139
Vishay Semiconductors
High Speed Optocoupler, 100 kBd, Low Input Current,
Photodiode Darlington Output
Features
•
•
•
•
•
•
•
•
•
High Current Transfer Ratio, 300 %
Low Input Current, 0.5 mA
High Output Current, 60 mA
Isolation Test Voltage, 5300 V
RMS
TTL Compatible Output, V
OL
= 0.1 V
High Common Mode Rejection, 500 V/µs
Adjustable Bandwidth-Access to Base
Standard Molded Dip Plastic Package
Lead-free component
NC 1
A
C
2
3
8
VCC
7
VB
6
V0
5
GND
NC
4
i179082
e3
Pb
Pb-free
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
Logic Ground Isolation-TTL/TTL, TTL/CMOS, CMOS/
CMOS, CMOS/TTL
EIA RS 232 Line Receiver
Low Input Current Line Receiver-Long Lines,Party
Lines
Telephone Ring Detector
117 VAC Line Voltage Status Indication-Low Input
Power Dissipation
Low Power Systems-Ground Isolation
Photo darlington operation is achieved by tying the
V
CC
and V
O
terminals together. Access to the base
terminal allows adjustment to the gain bandwidth.
The 6N138 is ideal for TTL applications since the
300 % minimum current transfer ratio with an LED
current of 1.6 mA enables operation with one unit
load-in and one unit load-out with a 2.2 kΩ pull-up
resistor.
The 6N139 is best suited for low power logic applica-
tions involving CMOS and low power TTL. A 400 %
current transfer ratio with only 0.5 mA of LED current
is guaranteed from 0 °C to 70 °C
Caution: Due to the small geometries of this device, it should be
handled with Electrostatic Discharge (ESD) precautions. Proper
grounding would prevent damage further and/or degradation which
may be induced by ESD.
Order Information
Part
6N138
6N139
Remarks
CTR > 300 %, DIP-8
CTR > 500 %, DIP-8
CTR > 300 %, SMD-8 (option 7)
CTR > 300 %, SMD-8 (option 9)
CTR > 500 %, SMD-8 (option 7)
CTR > 500 %, SMD-8 (option 9)
Description
High common mode transient immunity and very high
current ratio together with 5300 V
RMS
insulation are
achieved by coupling and LED with an integrated high
gain photo detector in an eight pin dual-in-line pack-
age. Separate pins for the photo diode and output
stage enable TTL compatible saturation voltages with
high speed operation.
6N138-X007
6N138-X009
6N139-X007
6N139-X009
For additional information on the available options refer to
Option Information.
Document Number 83605
Rev. 1.5, 26-Oct-04
www.vishay.com
1
6N138/ 6N139
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward current
Average input current
Input power dissipation
1), 3)
Test condition
Symbol
V
R
I
F
I
F(AVG)
P
diss
Value
5.0
25
20
35
Unit
V
mA
mA
mW
Output
Parameter
Supply and output voltage
Emitter base reverse voltage
Peak input current
Peak transient input current
Output current
Output power dissipation
2), 4)
Test condition
pin 8-5, pin 6-5
pin8-5, pin 6-5
pin 5-7
50 % duty cycle - 1.0 ms pulse
width
t
p
≤
1.0
µs,
300 pps
pin 6
I
O
P
diss
Part
6N138
6N139
Symbol
V
CC
, V
O
V
CC
, V
O
Value
- 0.5 to 7.0
- 0.5 to 18
0.5
40
1.0
60
100
Unit
V
V
V
mA
A
mA
mW
Coupler
Parameter
Isolation test voltage
Isolation resistance
V
IO
= 500 V, T
amb
= 25 ° C
V
IO
= 500 V, T
amb
= 100 ° C
Storage temperature
Operating temperature
Lead soldering temperature
1)
2)
3)
4)
Test condition
Symbol
V
ISO
R
IO
R
IO
T
stg
T
amb
Value
5300
≥
10
12
≥
10
11
- 55 to + 125
- 55 to + 100
260
Unit
V
RMS
Ω
Ω
°C
°C
°C
t = 10 s
T
sld
Derate linearly above 50 °C free-air temperature at a rate of 0.4 mA/°C
Derate linearly above 50 °C free-air temperature at a rate of 0.7 mW/°C
Derate linearly above 25 °C free-air temperature at a rate of 0.7 mA/°C
Derate linearly above 25 °C free-air temperature at a rate of 2.0 mW/°C
www.vishay.com
2
Document Number 83605
Rev. 1.5, 26-Oct-04
6N138/ 6N139
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Input forward voltage
Input reverse breakdown
voltage
Temperature coefficient of
forward voltage
Test condition
I
F
= 1.6 mA
I
R
= 10
µA
I
F
= 1.6 mA
Symbol
V
F
BV
R
5.0
- 1.8
Min
Typ.
1.4
Max
1.7
Unit
V
V
mV/°C
Output
Parameter
Logic low, output voltage
6)
Test condition
I
F
= 1.6 mA, I
O
= 4.8 mA,
V
CC
= 4.5 V
I
F
= 1.6 mA, I
O
= 8.0 mA,
V
CC
= 4.5 V
I
F
= 5.0 mA, I
O
= 15 mA,
V
CC
= 4.5 V
I
F
= 12 mA, I
O
= 24 mA,
V
CC
= 4.5 V
Logic high, output current
6)
Logic low supply current
6)
Logic high supply current
6)
6)
Part
6N138
6N139
6N139
6N139
6N138
6N139
Symbol
V
OL
V
OL
V
OL
V
OL
I
OH
I
OH
I
CCL
I
CCH
Min
Typ.
0.1
0.1
0.15
0.25
0.1
0.05
0.2
0.001
Max
0.4
0.4
0.4
0.4
250
100
1.5
10
Unit
V
V
V
V
µA
µA
mA
µA
I
F
= 0 mA, V
CC
= V
CC
= 7.0 V
I
F
= 0 mA, V
CC
= V
CC
= 18 V
I
F
= 1.6 mA, V
O
= OPEN,
V
CC
= 18 V
I
F
= 0 mA, V
O
= OPEN,
V
CC
= 18 V
Pin 7 open
Coupler
Parameter
Input capacitance
Input output insulation leakage
current
7)
Resistance (input output)
7)
Capacitance (input-output)
7)
7)
Test condition
f = 1.0 MHz, V
F
= 0
45 % relative humidity,
T
amb
= 25 °C, t = 5.0 s,
V
IO
= 3000 VDC
V
IO
= 500 VDC
f = 1.0 MHz
Symbol
C
IN
Min
Typ.
25
Max
1.0
Unit
pF
µA
R
IO
C
IO
10
12
0.6
Ω
pF
Device considered a two-terminal device: pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7, and 8 shorted together.
Document Number 83605
Rev. 1.5, 26-Oct-04
www.vishay.com
3
6N138/ 6N139
Vishay Semiconductors
Current Transfer Ratio
Parameter
Current Transfer Ratio
5), 6)
Current Transfer Ratio
Test condition
I
F
= 1.6 mA, V
O
= 0.4 V,
V
CC
= 4.5 V
I
F
= 0.5 mA, V
O
= 0.4 V,
V
CC
= 4.5 V
I
F
= 1.6 mA, V
O
= 0.4 V,
V
CC
= 4.5 V
5)
6)
Part
6N138
6N139
6N139
Symbol
CTR
CTR
CTR
Min
300
400
500
Typ.
1600
1600
2000
Max
Unit
%
%
%
DC current transfer ratio is defined as the ratio of output collector current, I
O
, to the forward LED input current, I
F
times 100 %.
Pin 7 open
Switching Characteristics
Parameter
Propagation delay time to logic
low at output
Propagation delay time to logic
low at output
6) , 8)
Test condition
I
F
= 1.6 mA, R
L
= 2.2 kΩ
I
F
= 0.5 mA, R
L
= 4.7 kΩ
I
F
= 12 mA, R
L
= 270
Ω
Part
6N138
6N139
6N139
6N138
6N139
6N139
Symbol
t
PHL
t
PHL
t
PHL
t
PLH
t
PLH
t
PLH
Min
Typ.
2.0
6.0
0.6
2.0
4.0
1.5
Max
10
25
1.0
35
60
7.0
Unit
µs
µs
µs
µs
µs
µs
Propagation delay time to logic
high at output
Propagation delay time to logic
high at output
6)
8)
6) , 8)
I
F
= 1.6 mA, R
L
= 2.2 kΩ
I
F
= 0.5 mA, R
L
= 4.7 kΩ
I
F
= 12 mA, R
L
= 270
Ω
Pin 7 open
Using a resistor between pin 5 and 7 will decrease gain and delay time.
Common Mode Transient Immunity
Parameter
Test condition
Symbol
| CM
H
|
Min
Typ.
500
Max
Unit
V/µs
I
F
= 0 mA, R
L
= 2.2 kΩ, R
CC
= 0,
Common mode transient
immunity, logic high level output |V
CM
| = 10 V
P-P
9) , 10)
Common mode transient
immunity, logic low level output
9) , 10)
9)
I
F
= 1.6 mA, R
L
= 2.2 kΩ,
R
CC
= 0, |V
CM
| = 10 V
P-P
| CM
L
|
- 500
V/µs
Common mode transient immunity in logic high level is the maximum tolerable (positive) dVcm/dt on the leading edge of the common
mode pulse, V
CM
, to assure that the output will remain in a logic high state (i.e. V
O
> 2.0 V) common mode transient immunity in logic low
level is the maximum tolerable (negative) dVcm/dt on the trailing edge of the common mode pulse signal, V
CM
to assure that the output
will remain in a logic low state (i.e. V
O
< 0.8 V).
10)
In applications where dv/dt may exceed 50,000 V/µs (such as state discharge) a series resistor, R
CC
should be included to protect I
C
from destructively high surge currents.The recommend value is R
CC
≅[(1
V)/(0.15 I
F
(mA)] KΩ
www.vishay.com
4
Document Number 83605
Rev. 1.5, 26-Oct-04
6N138/ 6N139
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
4
.255 (6.48)
.268 (6.81)
5
6
7
8
ISO Method A
3
2
1
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.031 (0.79)
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
i178006
.300 (7.62)
typ.
10°
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
3°–9°
.008 (.20)
.012 (.30)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Option 7
.300 (7.62)
TYP
.
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18494
Document Number 83605
Rev. 1.5, 26-Oct-04
www.vishay.com
5
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