TN0602
TN0604
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
20V
40V
40V
R
DS(ON)
(max)
0.75Ω
0.75Ω
1.0Ω
I
D(ON)
(min)
4.0A
4.0A
4.0A
V
GS(th)
(max)
1.6V
1.6V
1.6V
Order Number / Package
TO-92
—
TN0604N3
—
SOW-20*
—
—
TN0604WG
7
* Same as
SO-20 with 300 mil wide body.
Features
Low threshold — 1.6V max.
High input impedance
Low input capacitance — 140pF typical
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
SGD
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
TO-92
SOW-20
Notes:
1. See Package Outline section for dimensions.
2. See Array section for quad pinouts.
7-47
TN0602/TN0604
Thermal Characteristics
Package
TO-92
SOW-20
I
D
(continuous)*
1.0A
I
D
(pulsed)
4.6A
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
1.0A
I
DRM
4.6A
Refer to Arrays & Special Functions Section.
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
TN0604
TN0602
Min
40
20
0.6
-3.8
1.6
-4.5
100
10
1.0
I
D(ON)
R
DS(ON)
ON-State Drain Current
1.5
4.0
Static Drain-to-Source
ON-State Resistance
TO-92/SOW-20
TO-92
SOW - 20
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
1.2
300
0.5
0.5
0.8
140
75
25
190
110
50
10
6.0
25
20
1.8
V
ns
V
GS
= 0V, I
SD
= 1.5A
V
GS
= 0V, I
SD
= 1A
ns
V
DD
= 20V
I
D
= 0.5A
R
GEN
= 25Ω
pF
2.1
7.0
1.0
0.6
1.6
0.75
1.0
0.75
%/°C
Ω
V
GS
= 10V, I
D
= 1.5A
V
DS
= 20V, I
D
= 1.5A
V
GS
= 0V, V
DS
= 20V
f = 1 MHz
V
mV/°C
nA
µA
mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 2.5mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 5V, V
DS
= 20V
V
GS
= 10V, V
DS
= 20V
V
GS
= 5V, I
D
= 0.75A
V
GS
= 10V, I
D
= 1.5A
Typ
Max
Unit
V
Conditions
V
GS
= 0V, I
D
= 2.0mA
A
Ω
Ω
Notes:
1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2: All A.C. parameters sample tested.
V
DD
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
10%
t
(ON)
t
d(ON)
V
DD
OUTPUT
0V
90%
90%
t
r
t
(OFF)
t
d(OFF)
t
F
D.U.T.
10%
10%
INPUT
PULSE
GENERATOR
R
gen
R
L
OUTPUT
7-48
TN0602/TN0604
Typical Performance Curves
Output Characteristics
10
10
Saturation Characteristics
8
V
GS
=
10V
8
V
GS
=
I
D
(amperes)
I
D
(amperes)
6
9V
8V
6
10V
9V
8V
4
7V
6V
4
7V
6V
2
5V
4V
2
5V
4V
3V
0
0
10
20
30
40
50
3V
0
0
2
4
6
8
10
V
DS
(volts)
Transconductance vs. Drain Current
2.0
10
V
DS
(volts)
Power Dissipation vs. Case Temperature
7
V
DS
= 25V
DS
8
G
FS
(siemens)
1.0
TA = 25°C
T
A
= 125°C
P
D
(watts)
TA = -55°C
6
4
2
TO-92
0
0
1
2
3
4
5
6
7
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
10
1.0
T
C
(
°
C)
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-92 (pulsed)
0.8
I
D
(amperes)
1.0
0.6
TO-92 (DC)
0.1
0.4
0.2
TO-92
T
C
= 25°C
P
D
= 1W
T C = 25°C
0.01
0.1
1
10
100
0
0.001
0.01
0.1
1
10
V
DS
(volts)
t
p
(seconds)
7-49
TN0602/TN0604
Typical Performance Curves
BV
DSS
Variation with Temperature
2.0
1.1
On-Resistance vs. Drain Current
V
GS
= 5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
V
GS
= 10V
1.0
1.0
0.9
0
-50
0
50
100
150
0
5.0
10.0
T
j
(°C)
Transfer Characteristics
10
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.4
1.4
V
DS
= 25V
8
V
GS(th)
(normalized)
I
D
(amperes)
6
=
T
A
5
-5
°
C
=
1.2
V
(th)
@ 1mA
1.2
°
C
25
T
A
1.0
R
DS
@ 10V, 1.5A
1.0
4
=
T
A
2
5
°
12
C
0.8
0.8
0.6
0
0
2
4
6
8
10
-50
0
50
100
150
0.6
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
200
10
T
j
(°C)
Gate Drive Dynamic Characteristics
f = 1MHz
150
8
C
ISS
V
DS
= 10V
C (picofarads)
V
GS
(volts)
170 pF
6
170 pF
100
C
OSS
50
4
V
DS
= 40V
C
RSS
2
0
0
10
20
30
40
0
0
1.0
2.0
3.0
4.0
5.0
V
DS
(volts)
Q
G
(nanocoulombs)
7-50
R
DS(ON)
(normalized)
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