BCR 10PN
NPN/PNP Silicon Digital Tansistor Array
• Switching circuit, inverter, interface circuit,
drive circuit
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Built in bias resistor (R
1
=10kΩ, R
2
=10kΩ)
Tape loading orientation
Type
BCR 10PN
Marking Ordering Code Pin Configuration
W1s
Package
Q62702-C2411 1=E1 2= B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation,
T
S
= 115°C
Junction temperature
Storage temperature
Symbol
Values
50
50
10
20
100
250
150
- 65 ... + 150
mA
mW
°C
Unit
V
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
T
j
T
stg
Thermal Resistance
Junction ambient
1)
R
thJA
R
thJS
≤
275
≤
140
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
1
Nov-26-1996
BCR 10PN
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
min.
DC Characteristics
Collector-emitter breakdown voltage
Values
typ.
max.
Unit
V
(BR)CEO
50
-
-
-
-
-
-
-
-
10
1
-
-
V
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
V
(BR)CBO
50
I
C
= 10 µA,
I
B
= 0
Collector cutoff current
I
CBO
-
100
nA
mA
-
0.75
-
30
-
V
-
0.3
1.5
2.5
13
1.1
kΩ
-
V
CB
= 40 V,
I
E
= 0
Emitter cutoff current
I
EBO
h
FE
V
CEsat
V
i(off)
0.8
V
EB
= 10 V,
I
C
= 0
DC current gain
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on Voltage
V
i(on)
1
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics for NPN Type
Transition frequency
R
1
R
1
/R
2
f
T
7
0.9
MHz
-
130
3
-
pF
-
-
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
C
cb
V
CB
= 10 V,
f
= 1 MHz
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
Nov-26-1996
BCR 10PN
NPN TYPE
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
Collector-Emitter Saturation Voltage
V
CEsat
=
f(I
C
),
h
FE
= 20
10
3
10
2
-
h
FE
10
2
I
C
V
10
1
10
1
10
0
-1
10
10
0
10
1
mA
I
C
10
0
0.0
0.2
0.4
0.6
V
1.0
V
CEsat
Input on Voltage
V
i(on)
=
f(I
C
)
V
CE
= 0.3V (common emitter configuration)
Input off voltage
V
i(off)
=
f(I
C
)
V
CE
= 5V (common emitter configuration)
10
2
10
1
mA
mA
I
C
10
1
I
C
10
0
10
0
10
-1
10
-1
-1
10
10
0
10
1
V
V
i(on)
10
-2
0.0
0.5
1.0
1.5
2.0
V
3.0
V
i(off)
Semiconductor Group
3
Nov-26-1996
BCR 10PN
PNP TYPE
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
Collector-Emitter Saturation Voltage
V
CEsat
=
f(I
C
),
h
FE
= 20
10
3
10
2
-
h
FE
10
2
I
C
mA
10
1
10
1
10
0
-1
10
10
0
10
1
mA
I
C
10
0
0.0
0.2
0.4
0.6
V
1.0
V
CEsat
Input on Voltage
V
i(on)
=
f(I
C
)
V
CE
= 0.3V (common emitter configuration)
Input off voltage
V
i(off)
=
f(I
C
)
V
CE
= 5V (common emitter configuration)
10
2
10
1
mA
mA
I
C
10
1
I
C
10
0
10
0
10
-1
10
-1
-1
10
10
0
10
1
V
V
i(on)
10
-2
0.0
0.5
1.0
1.5
V
2.5
V
i(off)
Semiconductor Group
4
Nov-26-1996
BCR 10PN
Total power dissipation
P
tot
=
f
(T
A
*;T
S
)
* Package mounted on epoxy
300
mW
P
tot
200
T
S
T
A
150
100
50
0
0
20
40
60
80
100
120 °C 150
T
A
,T
S
Permissible Pulse Load
R
thJS
=
f(t
p
)
Permissible Pulse Load
P
totmax
/
P
totDC
=
f(t
p
)
10
3
10
3
K/W
-
R
thJS
10
2
P
totmax
/P
totDC
10
2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
1
10
0
10
-1
-6
10
10
-5
10
-4
10
-3
10
-2
10
s 10
t
p
-1
0
10
0
-6
10
10
-5
10
-4
10
-3
10
-2
10
s 10
t
p
-1
0
Semiconductor Group
5
Nov-26-1996
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
