1N4148 DO34
Features
· Silicon epitaxial planar diode
· Fast switching diodes
· 500mW power dissipation
· This diode is also available in the Mini-MELF case with
the type designation LL4148
SMALL SIGNAL
SWITCHING DIODES
DO-34(GLASS)
0.79(2.0)
MAX.
DIA.
1.02(26.0)
MIN.
0.106(2.9)
MAX.
Mechanical Data
· Case: DO-35 glass case
· Polarity: Color band denotes cathode end
· Weight: Approx. 0.13 gram
0.017(0.42)
MAX.
DIA.
1.02(26.0)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Reverse Voltage
Peak Reverse Voltage
Average rectified current, Half wave rectification with
Resistive load at T
A
=25℃ and F≥50Hz
Surge forward current at t<1S and T
J
=25℃
Power dissipation at T
A
=25℃
Junction temperature
Storage temperature range
Symbol
V
R
V
RM
I
AV
I
FSM
Ptot
T
J
T
STG
Value
75
100
150
1)
500
500
1)
175
-65 to +175
Units
Volts
Volts
mA
mA
mW
℃
℃
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Electrical characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Forward voltage
Leakage current
at V
R
=20V
at V
R
=75V
at V
R
=20V, T
J
=150℃
Junction Capacitance at V
R
=V
F
=0V
Voltage rise when switching ON tested with 50mA
pulse tp=0.1μS, Rise time<30μS, fp=5 to 100KHz
Reverse Recovery time from I
F
=10mA to I
R
=1mA,
V
R
=6V, R
L
=100Ω
Thermal resistance, junction to Ambient
Rectification efficiency at f=100MHz, V
RF
=2V
Symbols
V
F
I
R
I
R
I
R
C
J
V
fr
trr
Rθ
JA
Min.
Typ.
Max.
1
25
5
50
4
2.5
4
350
1)
Units
Volts
nA
μA
μA
pF
Volts
ns
K/W
η
0.45
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
RATINGS AND CHARACTERISTIC CURVES 1N4148
FIG.1-FORWARD CHARACTERISTICS
mA
103
FIG.2-DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
Ω
10
4
T
J
= 25
℃
f=1KHz
102
10
3
T
J
=100℃
10
T
J
=25℃
I
F
r
F
10
2
1
10-1
10
10-2
0
1
2V
1
10-
2
10-
1
1
10
10
2
mA
V
F
I
F
FIG.3-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
mW
1000
900
800
700
FIG. 4-RELATIVE CAPACITANCE VERSUS
VOLTAGE
1.1
T
J
= 25
℃
f=1MHz
P
tot
600
500
400
300
200
100
0
0
100
200
℃
C
tot
(VR)
C
tot
(OV)
1.0
0.9
0.8
0.7
0
2
4
6
8
10V
T
A
V
R
RATINGS AND CHARACTERISTIC CURVES 1N4148
FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT
CIRCUIT
FIG.6-LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
nA
104
D.U.T.
60
Ω
V
RF
=2V
2nF
5K
Ω
V
O
103
102
10
V
R
= 20V
1
0
100
200
℃
FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
V=tp/T
I
FRM
10
n=0
T=1/fp
I
FRM
tp
T
0.1
1
0.2
0.5
0.1
10-5
10-4
10-3
10-
2
10-
1
1
10S
tp
嵌入式系统
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