8 channel power mosfet array monolithic N-channel enchancement mode
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Supertex |
零件包装代码 | SOT |
包装说明 | PLASTIC, SO-20 |
针数 | 20 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
配置 | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压 | 400 V |
最大漏极电流 (Abs) (ID) | 0.015 A |
最大漏极电流 (ID) | 0.015 A |
最大漏源导通电阻 | 700 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 2 pF |
JESD-30 代码 | R-PDSO-G20 |
JESD-609代码 | e0 |
元件数量 | 8 |
端子数量 | 20 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | P-CHANNEL |
功耗环境最大值 | 1.4 W |
最大功率耗散 (Abs) | 1.4 W |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
AP0140WG | AP0140NA | AP0132NB | AP0132NA | AP0140 | AP0132ND | AP0116ND | AP0140ND | |
---|---|---|---|---|---|---|---|---|
描述 | 8 channel power mosfet array monolithic N-channel enchancement mode | 8 channel power mosfet array monolithic N-channel enchancement mode | 8 channel power mosfet array monolithic N-channel enchancement mode | 8 channel power mosfet array monolithic N-channel enchancement mode | 8 channel power mosfet array monolithic N-channel enchancement mode | 8 channel power mosfet array monolithic N-channel enchancement mode | 8 channel power mosfet array monolithic N-channel enchancement mode | 8 channel power mosfet array monolithic N-channel enchancement mode |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | - | 不符合 | 不符合 | 不符合 |
厂商名称 | Supertex | Supertex | Supertex | Supertex | - | Supertex | Supertex | Supertex |
零件包装代码 | SOT | DIP | - | DIP | - | DIE | DIE | DIE |
包装说明 | PLASTIC, SO-20 | PLASTIC, DIP-18 | , | PLASTIC, DIP-18 | - | DIE-17 | DIE-17 | DIE-17 |
针数 | 20 | 18 | - | 18 | - | 17 | 17 | 17 |
Reach Compliance Code | unknown | unknown | unknown | unknown | - | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | - | EAR99 | - | EAR99 | EAR99 | EAR99 |
配置 | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE | - | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE | - | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE | COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压 | 400 V | 400 V | - | 320 V | - | 320 V | 160 V | 400 V |
最大漏极电流 (Abs) (ID) | 0.015 A | 0.015 A | 0.015 A | 0.015 A | - | 0.015 A | 0.015 A | 0.015 A |
最大漏源导通电阻 | 700 Ω | 700 Ω | - | 700 Ω | - | 700 Ω | 700 Ω | 700 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 2 pF | 2 pF | - | 2 pF | - | 2 pF | 2 pF | 2 pF |
JESD-30 代码 | R-PDSO-G20 | R-PDIP-T18 | - | R-PDIP-T18 | - | S-XUUC-N17 | S-XUUC-N17 | S-XUUC-N17 |
JESD-609代码 | e0 | e0 | e0 | e0 | - | e0 | e0 | e0 |
元件数量 | 8 | 8 | - | 8 | - | 8 | 8 | 8 |
端子数量 | 20 | 18 | - | 18 | - | 17 | 17 | 17 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | - | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | - | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | - | SQUARE | SQUARE | SQUARE |
封装形式 | SMALL OUTLINE | IN-LINE | - | IN-LINE | - | UNCASED CHIP | UNCASED CHIP | UNCASED CHIP |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | - | P-CHANNEL | P-CHANNEL | P-CHANNEL |
认证状态 | Not Qualified | Not Qualified | - | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | NO | NO | NO | - | YES | YES | YES |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | GULL WING | THROUGH-HOLE | - | THROUGH-HOLE | - | NO LEAD | NO LEAD | NO LEAD |
端子位置 | DUAL | DUAL | - | DUAL | - | UPPER | UPPER | UPPER |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | AMPLIFIER | AMPLIFIER | - | AMPLIFIER | - | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | - | SILICON | - | SILICON | SILICON | SILICON |
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