SemiWell
Semiconductor
SBR13003
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical 120ns@1.0A)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 200mV@1.0A/0.25A)
- Wide Reverse Bias S.O.A
Symbol
○
2.Collector
1.Base
○
○
3.Emitter
General Description
This devices is designed for high voltage, high speed switching
characteristic required such as lighting system, switching regulator,
inverter and deflection circuit.
TO-126
1
2
3
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
STG
T
J
Parameter
Collector-Emitter Voltage ( V
BE
= 0 )
Collector-Emitter Voltage ( I
B
= 0 )
Emitter-Base Voltage ( I
C
= 0 )
Collector Current
Collector Peak Current ( t
P
＜
5 ms
)
Base Current
Base Peak Current ( t
P
＜
5 ms
)
Total Dissipation at T
C
= 25 °C
Storage Temperature
Max. Operating Junction Temperature
Value
700
400
9.0
1.5
3.0
0.75
1.5
40
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
W
°C
°C
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
3.12
89
Units
°C/W
°C/W
Oct, 2002. Rev. 2
Copyright@S emiWell S emiconduct or Co., Ltd., All rights reserved
1/6
SBR13003
Electrical Characteristics
Symbol
I
CEV
V
CEO(sus)
( T
C
= 25 °C unless otherwise noted )
Parameter
Collector Cut-off Current
( V
BE
= - 1.5V )
Collector-Emitter Sustaining Voltage
( I
B
= 0 )
Condition
V
CE
= 700V
V
CE
= 700V
I
C
= 10 mA
I
C
= 0.5A
I
C
= 1.0A
I
C
= 1.5A
I
C
= 0.5A
I
C
= 1.0A
I
C
= 0.5A
I
C
= 1.0A
I
C
= 1.0A
I
B1
= 0.2A
T
P
= 25
㎲
V
CC
= 15V
I
B1
= 0.2A
L = 0.35mH
V
CC
= 15V
I
B1
= 0.2A
L = 0.35mH
I
C
= 1.0A
I
B2
= -0.5A
V
clamp
= 300V
I
C
= 1.0A
I
B2
= -0.5A
V
clamp
= 300V
T
C
= 100 °C
I
B
= 0.1A
I
B
= 0.25A
I
B
= 0.5A
I
B
= 0.1A
I
B
= 0.25A
V
CE
= 2V
V
CE
= 2V
V
CC
= 125V
I
B2
= - 0.2A
T
C
= 100 °C
Min
-
Typ
-
Max
1.0
5.0
-
Units
mA
400
-
V
V
CE(sat)
Collector-Emitter Saturation Voltage
-
-
0.3
0.5
1.0
1.0
1.2
30
25
V
V
BE(sat)
Base-Emitter Saturation Voltage
-
-
V
h
FE
DC Current Gain
Resistive Load
Turn-On Time
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
10
5
-
t
on
t
s
t
f
t
s
t
f
-
0.2
1.5
0.15
1.0
3.0
0.4
㎲
-
2.0
0.12
4.0
0.3
㎲
t
s
t
f
-
2.4
0.15
5.0
0.4
㎲
※
Notes :
Pulse Test : Pulse width
≤
300㎲, Duty cycle
≤
2%
2/6
SBR13003
Fig 1. Static Characteristics
3.0
2.7
2.4
I
B
= 500mA
I
B
= 400mA
I
B
= 250mA
I
B
= 200mA
I
B
= 150mA
I
B
= 100mA
I
B
= 50mA
I
B
= 300mA
30
40
Fig 2. DC Current Gain
I
C
, Collector Current [A]
1.8
1.5
1.2
0.9
0.6
0.3
0.0
0
1
2
3
4
h
FE
, DC Current Gain
2.1
T
J
= 125 C
o
20
T
J
= 25 C
o
10
※
Notes :
V
CE
= 5V
V
CE
= 1V
I
B
= 0mA
5
0
0.01
0.1
1
V
CE
, Collector-Emitter Voltage [V]
I
C
, Collector Current [A]
Fig 3. Collector-Emitter Saturation Voltage
10
1.2
1.1
1
Fig 4. Base-Emitter Saturation Voltage
V
CE
, Collector-Emitter Voltage [V]
V
BE
, Base-Emitter Voltage [V]
T
J
= 125 C
0.1
o
1.0
T
J
= 25 C
0.9
0.8
0.7
0.6
0.5
0.1
o
T
J
= 25 C
0.01
o
T
J
= 125 C
※
Note :
h
FE
= 5
o
※
Note :
h
FE
= 5
0.1
1
1
I
C
, Collector Current [A]
I
C
, Collector Current [A]
Fig 5. Resistive Load Fall Time
1000
10
Fig 6. Resistive Load Storage Time
100
※
Notes :
V
CC
= 125V
h
FE
= 5
I
B1
= - I
B2
t
stg
, Time [us]
t
f
, Time [ns]
T
J
= 25 C
o
T
J
= 25 C
o
※
Notes :
V
CC
= 125V
h
FE
= 5
I
B1
= - I
B2
1
0.0
0.3
0.6
0.9
1.2
1.5
1.8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
C
, Collector Current [A]
I
C
, Collector Current [A]
3/6
SBR13003
Fig 7. Safe Operation Areas
10
1
Fig 8. Reverse Biased Safe Operation
Areas
1.6
10
µ
s
I
C
, Collector Current [A]
10
0
1ms
DC
10
-1
I
C
, Collector Current [A]
100
µ
s
1.2
※
Notes :
T
J
≤
100 °C
I
B1
= 1 A
R
BB
= 0
Ω
L
C
= 0.35mH
0.8
V
BE
(off) = -9V
0.4
-5V
-3V
-1.5V
※
Single Pulse
10
-2
10
0
10
1
10
2
10
3
0.0
0
100
200
300
400
500
600
700
800
V
CE
, Collector-Emitter Clamp Voltage [V]
V
CE
, Collector-Emitter Clamp Voltage [V]
Fig 9. Power Derating Curve
125
Power Derating Factor (%)
100
75
50
25
0
0
50
100
150
o
200
T
C
, Case Temperature ( C)
4/6
SBR13003
Inductive Load Switching & RBSOA Test Circuit
L
C
I
B1
I
C
I
B
V
CE
D.U.T
R
BB
V
BE
(off)
V
Clamp
V
CC
Resistive Load Switching Test Circuit
R
C
I
B1
I
C
I
B
V
CE
D.U.T
R
BB
V
BE
(off)
V
CC
5/6
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