SemiWell
Semiconductor
SFP630
N-Channel MOSFET
Features
■
■
■
■
■
R
DS(on)
(Max 0.4
Ω
)@V
GS
=10V
Gate Charge (Typical 19nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Symbol
●
2. Drain
1. Gate
◀
●
●
▲
3. Source
General Description
This Power MOSFET is produced using Semiwell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG,
T
J
T
L
Drain to Source Voltage
Continuous Drain Current(@T
C
= 25
°C)
Continuous Drain Current(@T
C
= 100
°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T
C
= 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 2)
(Note 1)
(Note 3)
(Note 1)
Parameter
Value
200
9
5.7
36
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
±
25
160
7.2
5.5
72
0.57
- 55 ~ 150
300
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Value
Min.
-
-
-
Typ.
-
0.5
-
Max.
1.74
-
62.5
Units
°C/W
°C/W
°C/W
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 160 V, T
C
= 125°C
V
GS
= 25 V, V
DS
= 0 V
V
GS
= -25 V, V
DS
= 0 V
200
--
--
--
--
--
--
0.20
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 4.5 A
V
DS
= 40 V, I
D
= 4.5 A
(Note 4)
2.0
--
--
--
0.35
4.4
4.0
0.4
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
420
85
35
550
110
45
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 160 V, I
D
= 9 A,
V
GS
= 10 V
(Note 4, 5)
V
DD
= 100 V, I
D
= 9 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
25
60
65
45
19
3
9.5
60
130
150
100
25
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 9 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 9 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
155
0.69
9
36
1.5
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3mH, I
AS
= 9A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
9A, di/dt
≤
300µA/s, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Typical Characteristics
10
1
I
D
, Drain Current [A]
10
0
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
1
10
0
150
℃
25
℃
-55
℃
10
-1
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
※
Notes :
1. V
DS
= 40V
2. 250µ s Pulse Test
10
-1
10
-1
10
0
10
1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.2
I
DR
, Reverse Drain Current [A]
Drain-Source On-Resistance
0.9
10
1
V
GS
= 10V
V
GS
= 20V
0.6
R
DS(O N)
[Ω ],
10
0
0.3
150
℃
10
-1
※
Note : T
J
= 25
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250µ s Pulse Test
0.0
0
4
8
12
16
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1200
V
G S
, Gate-Source Voltage [V]
1000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
10
V
DS
= 40V
V
DS
= 100V
V
DS
= 160V
Capacitances [pF]
800
C
iss
C
oss
C
rss
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
8
600
6
400
4
200
2
※
Note : I
D
= 9A
0
-1
10
0
10
0
10
1
0
5
10
15
20
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Typical Characteristics
(Continued)
1.2
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µA
0.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 4.5 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
Operation in This Area
is Limited by R
DS(on)
10
2
8
100
µ
s
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
1 ms
10 ms
DC
6
4
10
0
※
Notes :
2
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
-1
10
0
10
1
10
2
0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Z
θ
JC
Thermal Response
(t),
10
0
D = 0 .5
0 .2
0 .1
10
-1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
※
N o te s :
1 . Z
θ
J C
t) = 1 .7 4
℃
/W M a x .
(
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
t)
(
P
DM
t
1
t
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a t io n [s e c ]
Figure 11. Transient Thermal Response Curve
Gate Charge Test Circuit & Waveform
5K
0
Ω
1V
2
20F
0n
30F
0n
Sm Tp
a e ye
a DT
s U
V
S
D
V
S
G
1V
0
Q
g
s
Q
g
V
S
G
Q
g
d
DT
U
3A
m
Cag
hr e
Resistive Switching Test Circuit & Waveforms
V
D
S
R
G
V
G
S
R
L
V
D
D
V
D
S
9
0
%
1
0
V
D
U
T
V
G
S
1
0
%
t
(n
d)
o
t
r
t
n
o
t
(f)
df
o
t
f
o
f
t
f
Unclamped Inductive Switching Test Circuit & Waveforms
L
V
D
S
I
D
R
G
1
0
V
t
p
B
S
V
S
D
1
-- L
S
----------
-- I
2
----------
E=
A
S
2
A
B
S
-V
V
S D
D
D
B
S
V
S
D
I
S
A
V
D
D
I ()
t
D
V
D
D
t
p
D
U
T
V ()
D
t
S
Te
i
m
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