Preliminary
SIM100D12SV1
V
CES
= 1200V
Ic = 100A
V
CE(ON)
typ. = 1.7V
@ Ic = 100A
“HALF-BRIDGE” IGBT
Features
▪Trench
gate + field stopper, using
Infineon chip design
▪
10µs Short circuit capability
▪
Low turn-off losses
▪
Short tail current for over 18KHz
▪
Positive V
CE
(on)
temperature coefficient
Applications
▪
AC & DC Motor controls
▪
VVVF inverters
▪
Optimized for high frequency inverter
Type Welding machines
▪
High frequency SMPS
▪
UPS, Robotics
Package : V1
Absolute Maximum Ratings
@ Tc = 25℃ (per leg)
Symbol
V
CES
V
GES
I
C
I
CM
I
F
I
FM
T
SC
V
iso
T
j
T
stg
Weight
Mounting
Torque
Parameter
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Isolation Voltage test
Junction Temperature
Storage Temperature
Weight of Module
Power Terminal Screw : M5
Terminal connection Screw : M5
V
GE
= 0V,
Condition
I
C
= 500
µA
Ratings
1200
± 20
Unit
V
V
A
A
A
A
T
C
= 80℃(25℃)
T
C
= 25℃
T
C
= 80℃(25℃)
TC=(25℃)
100(140)
200
100(140)
200
10
µs
V
℃
℃
g
Nm
Nm
AC 1 minute
2500
-40 ~ 150
-40 ~ 125
190
3.5
3.5
-1-
Preliminary
SIM100D12SV1
Typ
1350
1.7
5.8
-
-
1.7
Electrical Characteristics
@ Tj = 25℃ (unless otherwise specified)
Symbol
V
(BR)CES
V
CE(ON)
V
GE(th)
I
CES
I
GES
V
FM
Parameters
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Min
-
1.4
4.0
-
-
1.4
Max
1374
2.1
6.5
500
± 100
Unit
Test conditions
V
GE
=
0V, I
C
= 200
µA
V
I
C
= 100A,
V
GE
=
15V
V
CE
= V
GE,
I
C
= 250
µA
V
CE
= 1200V
V
GE
=
±
20V
µA
nA
V
V
GE
= 0V,
V
CE
= 0V,
I
C
= 100A
2.1
Switching Characteristic
@ Tj = 25℃ (unless otherwise specified)
Symbol
C
ies
C
oss
C
res
Parameters
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode Peak Reverse Recovery current
Diode Reverse Recovery time
Min
-
-
-
-
-
-
-
-
-
Typ
8653
452
395
342
45
624
108
155
100
Max
-
-
-
-
-
-
-
-
-
Unit
Test conditions
V
CC
=
25V,
f = 1.0MHz
V
GE
= 0V
pF
t
d(on)
t
r
t
d(off)
t
f
I
rr
t
rr
T
j
= 125℃
,
V
CC
= 600V
ns
I
C
= 100A
,
R
G
= 3.9
Ω
V
GE
=
±15V
A
ns
T
j
= 125℃
,
V
CC
= 600V
I
F
= 100A
,
R
G
= 3.9
Ω,
di/dt=1200A/us
Thermal Characteristic Values
Symbol
R
ΘJC
R
ΘJC
R
ΘCS
Parameters
Junction-to-Case (IGBT Part, Per 1/2 Module)
Junction-to-Case (Diode Part, Per 1/2 Module)
Case-to-Heat Sink (Conductive grease applied)
Min
-
-
-
Typ
-
-
0.05
Max
0.20
0.41
-
Unit
℃/W
-2-
Preliminary
SIM100D12SV1
Fig 1. Maximum DC Collector Current
vs. Case Temperature
Fig 2. Power Dissipation vs. Case
Temperature
Fig 3. Typ. IGBT Output Characteristics
T
J
= 25℃; tp = 80µs
Fig 4. Typ. IGBT Output Characteristics
T
J
= 125℃; tp = 80µs
-3-
Preliminary
SIM100D12SV1
Fig 5. Typ. Diode Forward Characteristics
tp = 80µs
Fig 6. Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
Fig 7. Typical V
CE
vs. V
GE
T
J
= 25℃
Fig 8. Typical V
CE
vs. V
GE
T
J
= 125℃
-4-
Preliminary
SIM100D12SV1
Fig 9. Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1Mhz
Fig 10. Typical Gate Charge vs. V
GE
I
CE
= 60A; L = 600µH
Fig 11. Typ. Switching Time vs. I
C
T
J
= 125℃; L = 200µH; V
CE
= 600V
R
G
= 3.9Ω; V
GE
= 15V
Fig 12. Typ. Switching Time vs. R
G
T
J
= 125℃; L = 200µH; V
CE
= 600V
I
CE
= 100A; V
GE
= 15V
-5-
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