Preliminary
SIM100D06AV1
V
CES
= 600V
Ic= 100A
V
CE(ON)
typ. = 1.5V
@Ic= 100A
“HALF-BRIDGE” IGBT MODULE
Feature
▪
Smart field stopper +Trench
design technology
▪
Low V
CE
(sat)
▪
Low Turn-off losses
▪
Short tail current for over 20KHz
Applications
▪
Motor controls
▪
VVVF inverters
▪
Inverter-type welding MC over 18KHZ
▪
SMPS, Electrolysis
▪
UPS/EPS, Robotics
Absolute Maximum Ratings
@ Tj=25℃ (Per Leg)
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FM
t
p
V
iso
Tj
Tstg
Weight
Md
Package : V1
Condition
Ratings
600
±
20
Parameter
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short circuit test, V
GE
= 15V, V
CC
= 360V
Isolation Voltage test
Junction Temperature
Storage Temperature
Weight of Module
Mounting torque with screw : M5
T
C
=
25℃
Unit
V
V
A
A
A
A
㎲
V
℃
℃
g
N.m
T
C
= 80℃
(25℃)
T
C
=
25℃
T
C
= 80℃
(25℃)
T
C
=
25℃
T
C
= 150℃
(25℃)
AC @ 1 minute
100 (130)
200
100 (130)
200
6 (8)
2500
-40 ~ 150
-40 ~ 125
190
2.0
Static Characteristics
@ Tj = 25℃ (unless otherwise specified)
Parameters
V
CE(ON)
V
GE(th)
I
CES
I
GES
V
FM
R
GINT
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Integrated gate resistor
ㅡ
ㅡ
ㅡ
Min
_
Typ
1.50
5.8
ㅡ
ㅡ
1.6
2
Max
1.95
Unit
V
Test conditions
I
C
= 100A, V
GE
= 15V
V
CE
= V
GE
, I
C
= 4㎃
6.5
5.0
400
2.0
㎃
㎁
V
V
GE
= 0V, V
CE
= 600V
V
CE
= 0V, V
GE
=
20V
I
F
= 100A, V
GE
= 0V
ㅡ
ㅡ
Ω
-1-
Preliminary
SIM100D06AV1
Electrical Characteristic Values (IGBT / DIODE)
@ Tj = 25℃ (unless otherwise specified)
Parameters
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
RRM
I
RM
t
rr
Q
rr
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse leakage current
Reverse Recovery Time
Reverse Recovery Charge
Min
ㅡ
ㅡ
ㅡ
ㅡ
ㅡ
ㅡ
ㅡ
600
ㅡ
ㅡ
ㅡ
Typ
6100
390
190
70
25
260
60
ㅡ
ㅡ
125
4.7
Max
ㅡ
Unit
Test conditions
V
CE
= 25V , V
GE
=
0V
ㅡ
ㅡ
ㅡ
ㅡ
pF
f = 1 MHz
Inductive Switching (125℃)
V
CC
= 300V
ns
I
C
= 100A
,
V
GE
=±15V
R
G
= 3.3
Ω
V
㎂
ns
µC
V
R
= 600V
I
F
= 100A, V
R
= 300V
di / dt = 2000A /
㎲
ㅡ
ㅡ
ㅡ
250
ㅡ
ㅡ
Thermal Characteristics
Symbol
R
ΘJC
R
ΘJC
R
ΘCS
Parameter
Junction-to-Case (IGBT Part, Per 1/2 Module)
Junction-to-Case (Diode Part, Per 1/2 Module)
Case-to-Heat Sink (Conductive grease applied)
Min
-
-
-
Typ
-
-
0.05
Max
0.44
0.77
-
Unit
℃/W
※ Data and
specifications
subject to change without notice.
-2-
Preliminary
SIM100D06AV1
Fig 1. Typ. IGBT Output Characteristics
Fig 2. Typ. IGBT Out Characteristics
Fig 3. Typ. Transfer Characteristics
Fig 4. Reverse Bias Operating Area
Fig 5. Forward Characteristics of Diode
Fig 6. Operating Frequency vs Collector Current
-3-
Preliminary
Package Outline
(dimensions in mm)
SIM100D06AV1
Headquarter:
#602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu,
Bucheon-City, S.KOREA
Tel)+82-32-234-4781,
Fax)+82-32-234-4789
Sales & Marketing
clzhang@semwiell.com
sales@semiwell.com
-4-
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