Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the MUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MUN5211DW1T1
Series
6
5
4
1
2
3
SOT-363
CASE 419B STYLE1
6
5
4
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Symbol Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature
1. FR–4 @ Minimum Pad
P
D
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
670 (Note 1.)
490 (Note 2.)
mW
mW/°C
°C/W
Q
2
R
2
R
1
1
2
R
1
R
2
Q
1
3
MARKING DIAGRAM
6
5
4
7X
1
2
3
R
θJA
7X = Device Marking
=
(See Page 2)
Symbol
P
D
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
–55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
R
θJA
R
θJL
T
J
, T
stg
2. FR–4 @ 1.0 x 1.0 inch Pad
MUN5211dw–1/8
MUN5211DW1T1
DEVICE MARKING AND RESISTOR VALUES
Device
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1 (Note 3.)
MUN5216DW1T1 (Note 3.)
MUN5230DW1T1 (Note 3.)
MUN5231DW1T1 (Note 3.)
MUN5232DW1T1 (Note 3.)
MUN5233DW1T1 (Note 3.)
MUN5234DW1T1 (Note 3.)
MUN5235DW1T1 (Note 3.)
MUN5236DW1T1 (Note 3.)
MUN5237DW1T1 (Note 3.)
Package
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Marking
7A
7B
7C
7D
7E
7F
7G
7H
7J
7K
7L
7M
7N
7P
R
1
(K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
R
2
(K)
10
22
47
47
Series
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
1.0
2.2
4.7
47
47
47
100
22
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
I
EBO
Emitter-Base Cutoff Current
MUN5211DW1T1
Min
8 8
Typ
Max
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
–
–
Unit
nAdc
nAdc
mAdc
–
–
–
–
–
–
–
–
(V
EB
= 6.0 V, I
C
= 0)
MUN5212DW1T1
–
–
MUN5213DW1T1
–
–
MUN5214DW1T1
–
–
MUN5215DW1T1
–
–
MUN5216DW1T1
–
–
MUN5230DW1T1
–
–
MUN5231DW1T1
–
–
MUN5232DW1T1
–
–
MUN5233DW1T1
–
–
MUN5234DW1T1
–
–
MUN5235DW1T1
–
–
MUN5236DW1T1
–
–
MUN5237DW1T1
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
V
(BR)CBO
50
–
Collector-Emitter Breakdown Voltage(Note 4.)(I
C
= 2.0 mA,I
B
=0) V
(BR)CEO
50
–
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
Vdc
Vdc
MUN5211dw–2/8
MUN5211DW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,)
Characteristic
Symbol
ON CHARACTERISTICS(Note
5.)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5235DW1T1
MUN5235DW1T1
Collector-Emitter Saturation Voltage (I
C
= 10mA,I
B
= 0.3 mA) V
CE(sat)
(I
C
= 10mA, I
B
= 5mA) MUN5230DW1T1/MUN5231DW1T1
(I
C
= 10mA, I
B
= 1mA) MUN5215DW1T1/MUN5216DW1T1
MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1
V
OL
Output Voltage (on)
MUN5211DW1T1
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
MUN5212DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
MUN5213DW1T1
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kΩ)
MUN5236DW1T1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kΩ)
MUN5237DW1T1
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
V
OH
(V
CC
= 5.0 V, V
B
= 0.05 V, R
L
= 1.0 kΩ)
MUN5230DW1T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
MUN5215DW1T1
MUN5216DW1T1
MUN5233DW1T1
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Series
(Continued)
Min
Typ
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
–
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
–
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.25
Unit
h
FE
Vdc
–
–
–
–
–
–
–
–
–
–
–
–
–
–
4.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
–
Vdc
Vdc
MUN5211dw–3/8
MUN5211DW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,)
Characteristic
ON CHARACTERISTICS(Note
6.)
Input Resistor
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
Resistor Ratio
MUN5211DW1T1/MUN5212DW1T1/ R
1
/R
2
MUN5213DW1T1/MUN5236DW1T1
MUN5214DW1T1
MUN5215DW1T1/MUN5216DW1T1
MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5237DW1T1
6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
Symbol
(Continued)
Min
Typ
Max
Series
Unit
kΩ
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
833°C
0
–50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
MUN5211dw–4/8
MUN5211DW1T1
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5211DW1T1
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Series
1
0.1
h
FE
, DC CURRENT GAIN (NORMALIZED)
1000
100
0.01
0.001
0
20
40
50
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
4
100
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
C ob CAPACITANCE (pF)
10
3
1
2
0.1
1
0.01
0
0
10
20
30
40
50
0.001
0
1
2
3
4
5
6
7
8
9
10
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
10
Figure 5. Output Current versus Input Voltage
V in , INPUT VOLTAGE (VOLTS)
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
MUN5211dw–5/8
嵌入式系统
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