NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HBU407
█
APPLICATIONS
High Voltage Swltching .
█
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation Tc=25℃)
(
……………………………60W
V
CBO
——Collector-Base
Voltage………………………………330V
V
CEO
——Collector-Emitter
Voltage……………………………150V
V
EBO
——Emitter-Base
Voltage………………………………………6V
I
C
——Collector
Current(DC)………………………………………7A
I
CP
——Collector
Current
(Pulse)
……………………………………10A
Ib——Base Current………………………………………………4A
TO-220
1―Base,B
2―Collector,
C
3―Emitter,E
█
ELECTRICAL CHARACTERISTICS(T
a
=25℃)
Symbol
I
CES(2)
I
CES(3)
I
EBO
H
FE
V
CE(sat)
V
BE(sat)
f
T
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Turn OFF Time
10
0.75
10
1
1.2
V
V
MHz
μS
Characteristics
Min
Typ
Max
5
100
1
1
Unit
mA
μA
mA
mA
Test Conditions
V
CE
=330V, V
BE
=0
V
CE
=200V, V
BE
=0
V
CE
=200V, V
BE
=0
(Tc=125℃)
V
EB
=6V, I
C
=0
V
CE
=1V, I
C
=5A
I
C
=5A, I
B
=0.5A
I
C
=5A, I
B
=0.5A
V
CE
=10V,I
C
=0.5A
I
C
=5A, I
B
=0.5A
I
CES(1)
Collector Cut-off Current
t
OFF