Shantou Huashan Electronic Devices Co.,Ltd.
HCF10C60
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(I
T(RMS)
=10A)
* Low On-State Voltage (1.4V(Typ.)@ I
TM
)
* Non-isolated Type
█ General
Description
Standard gate triggering SCR is suitable for the application where
requiring high bi-directional blocking voltage capability and also
suitable for over voltage protection,motor control cicuit in power
tool,inrush current limit circuit and heating control system.
█
Absolute Maximum Ratings
（T
a
=25
℃
½½½½½½ ½½½½½½½½½ ½½½½½½½½½）
T
s t g
——Storage
Temperature ------------------------------------------------------
－40~125℃
T
j
——Operating
Junction Temperature ----------------------------------------------
－40~125℃
V
DRM
——Repetitive
Peak Off-State Voltage -------------------------------------------------------------------- 600V
I
T
（
RMS
）——R.M.S
On-State Current（180º
Conduction Angles）---------------------------------------- 10A
I
T(AV)
——Average
On-State Current (Half Sine Wave : T
C
= 111 ° ----------------------------------------6.4A
C)
I
TSM
——Surge
On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 110A
I t
——Circuit
Fusing Considerations(t = 8.3ms) ------------------------------------------------------------
2
60A s
5W
2
P
GM
——Forward
Peak Gate Power Dissipation (T
a
=25℃） ---------------------------------------------------
P
G(AV)
——Forward
Average Gate Power Dissipation (T
a
=25℃，½＝８．３½½） ---------------------------------0.5W
I
FGM
——Forward
Peak Gate Current -------------------------------------------------------------------------------- 2A
V
RGM
——Reverse
Peak Gate Voltage ------------------------------------------------------------------------------- 5V
Shantou Huashan Electronic Devices Co.,Ltd.
█
Electrical Characteristics
（T
a
=25
℃
½½½½½½ ½½½½½½½½½ ½½½½½½½½½）
Symbol
I
DRM
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage (1)
Gate Trigger Current（2）
Gate Trigger Voltage (2)
Non-Trigger Gate Voltage
Holding Current
Thermal Resistance
Thermal Resistance
Critical Rate of Rise Off-state
Voltage
200
0.2
20
1.3
60
Min.
Typ.
Max.
10
200
1.6
15
1.5
Unit
V
AK
=V
DRM
uA
V
mA
V
Conditions
HCF10C60
T
a
=25
℃
T
a
=125
℃
I
TM
=20A,tp=380µ
s
V
AK
=6V(DC), R
L
=10 ohm
V
AK
=6V(DC), R
L
=10 ohm
V
TM
I
GT
V
G T
V
GD
I
H
Rth(j-c)
Rth(j-a)
dv/dt
T
a
=25
℃
V
V
AK
=12V, R
L
=100 ohm
T
a
=125
℃
I
T=100mA,
Gate open,
mA
T
a
=25
℃
℃/W
℃/W
V/µ
s
Junction to Case
Junction to Ambient
Linear slope up to V
D
=V
DRM
67%
Gate open
Tj=125
℃
1. Forward current applied for 1 ms maximum duration,duty cycle
≤1%.
2. R
GK
current is not included in measurement
█ Performance
Curves
FIGURE 1 – Gate Characteristics
Max. Allowable Case Temperture (°
c)
FIGURE 2 –Maximum CaseTemperture
Gate Voltage (v)
Gate Current (mA)
Average On-State Current (mA)
Shantou Huashan Electronic Devices Co.,Ltd.
FIGURE 3-Typical Forward Voltage(V)
Transient Thermal Imperdance (°
c)
FIGURE 4-Thermal Response
HCF10C60
On-State Current(A)
On-State Voltage (V)
Time (sec)
FIGURE 5-Typical Gate Trigger Voltage VS
Junction Temperature
FIGURE 6-Typical Gate Trigger Current VS
Junction Temperature
Junction Temperature (°
C)
Junction Temperature (°
C)
FIGURE 7-Typical Holding Current
FIGURE 8-Power Dissipation
Max. Average Power
Junction Temperature (°
C)
Dissipation (W)
Average On-State Current (A)
FPGA/CPLD
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