Shantou Huashan Electronic Devices Co.,Ltd.
HBTA8A60
ＩＮＮＥＲ ＩＮＳＵＬＡＴＥＤ ＴＹＰＥ ＴＲＩＡＣ （ＩＩ ＴＯ－２２０ ＰＡＣＫＡＧＥ）
█ Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(I
T(RMS)
=8A)
* High Commutation dv/dt
█ General
Description
The Triac HBTA8A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
█
Absolute Maximum Ratings
（T
a
=25℃）
T
stg
——Storage
Temperature………………………………………………………………
－40~125℃
T
j
——Operating
Junction Temperature
…………………………………………………… －40~125℃
P
GM
——Peak
Gate Power Dissipation………………………………………………………………… 5W
V
DRM
——Repetitive
Peak Off-State Voltage………………………………………………………… 600V
I
T
（
RMS
）——R.M.S
On-State Current（Ta=89℃）………………………………………………… 8A
V
G M
——Peak
Gate Voltage
…………………………………………………………………
10V
I
G M
— —
P e a k G a t e C u r r e n t
… … … … … … … … … … … … … … … … … … … … … … …
2 . 0 A
I
TSM
——Surge
On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)…………………… 80/88A
V
——RMS
Isolation Breakdown Voltage……………………………………………………… 2500V
ISO
█
Electrical Characteristics
（T
a
=25℃）
Symbol
I
DRM
V
TM
I+
GT1
I-
GT1
I-
GT3
V+
GT1
V-
GT1
V-
GT3
V
GD
(dv/dt)c
Rth(j-c)
I
H
Items
Repetitive Peak Off-State Current
Peak On-State Voltage
Gate Trigger Current（Ⅰ）
Gate Trigger Current（Ⅱ）
Gate Trigger Current（Ⅲ）
Gate Trigger Voltage（Ⅰ）
Gate Trigger Voltage（Ⅱ）
Gate Trigger Voltage（Ⅲ）
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Thermal Resistance
Holding Current
0.2
10
3.7
15
Min.
Max.
2.0
1.4
30
30
30
1.5
1.5
1.5
Unit
mA
V
mA
mA
mA
V
V
V
V
V/µS
℃/W
mA
Conditions
VD=VDRM, Single Phase,Half
Wave, TJ=125℃
I
T
=12A, Inst. Measurement
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
T
J
=125℃,V
D
=1/2V
DRM
TJ=125℃,VD=2/3VDRM
(di/dt)c=-4.0A/ms
Junction to case
Shantou Huashan Electronic Devices Co.,Ltd.
HBTA8A60
Fig 2. On-State Voltage
█ Performance
Curves
Fig 1.
Gate Characteristics
Gate Voltage (V)
10
1
0.1
10
1
10
2
10
3
Gate
Current
(mA)
On-state Current [A]
On-State Voltage [V]
Fig 3. Gate Trigger Voltage vs. Junction
Temperature
Fig 4. On State Current vs. Maximum
Power Dissipation
Junction Temperature [℃½ RMS On-State Current [A]
Fig 5. On State Current vs.
Allowable Case Temperature
Fig 6. Surge On-State Current Rating
( Non-Repetitive )
Allowable Case Temp. [°C]
Surge On-state Current [A]
10
0
Power Dissipation [W]
10
1
10
2
RMS On-State Current [A]
Time（Cycles）
Shantou Huashan Electronic Devices Co.,Ltd.
HBTA8A60
Fig 8. Transient Thermal Impedance
Fig 7. Gate Trigger Current vs.
Junction Temperature
Transient Thermal
Fig 9. Gate Trigger Characteristics Test Circuit
１０Ω
１０Ω
Junction Temperature [℃½
Ｔ½½½（½½½）
Impedance
[℃/W ]
１０Ω
Test Procedure
Ⅰ
Test Procedure
Ⅱ
Test Procedure
Ⅲ
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