MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MR750/D
High Current Lead Mounted
Rectifiers
•
Current Capacity Comparable to Chassis Mounted Rectifiers
•
Very High Surge Capacity
•
Insulated Case
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 2.5 grams (approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal Lead is
Readily Solderable
•
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
•
Polarity: Cathode Polarity Band
•
Shipped 1000 units per plastic bag. Available Tape and Reeled, 800 units
per reel by adding a “RL’’ suffix to the part number
•
Marking: R750, R751, R752, R754, R758, R760
™
Data Sheet
MR750
MR751
MR752
MR754
MR756
MR758
MR760
MR754 and MR760 are
Motorola Preferred Devices
HIGH CURRENT
LEAD MOUNTED
SILICON RECTIFIERS
50–1000 VOLTS
DIFFUSED JUNCTION
CASE 194–04
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non–Repetitive Peak Reverse Voltage
(Halfwave, single phase, 60 Hz peak)
RMS Reverse Voltage
Average Rectified Forward Current
(Single phase, resistive load, 60 Hz)
See Figures 5 and 6
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions)
Operating and Storage Junction
Temperature Range
Symbol
VRRM
VRWM
VR
VRSM
VR(RMS)
IO
MR750
50
MR751
100
MR752
200
MR754
400
MR756
600
MR758
800
MR760
1000
Unit
Volts
60
35
120
70
240
140
480
280
720
420
960
560
1200
700
Volts
Volts
Amps
22 (TL = 60°C, 1/8″ Lead Lengths)
6.0 (TA = 60°C, P.C. Board mounting)
IFSM
TJ, Tstg
400 (for 1 cycle)
Amps
°C
*
65 to +175
Symbol
vF
VF
IR
Max
1.25
0.90
25
1.0
ELECTRICAL CHARACTERISTICS
Characteristic and Conditions
Maximum Instantaneous Forward Voltage Drop
(iF = 100 Amps, TJ = 25°C)
Maximum Forward Voltage Drop
(IF = 6.0 Amps, TA = 25°C, 3/8″ leads)
Maximum Reverse Current
(Rated dc Voltage)
TJ = 25°C
TJ = 100°C
Unit
Volts
Volts
µA
mA
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Rev 2
Rectifier Device Data
©
Motorola, Inc. 1996
1
MR750 MR751 MR752 MR754 MR756 MR758 MR760
IFSM , PEAK HALF WAVE CURRENT (AMP)
700
500
300
200
TYPICAL
100
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
70
50
30
20
TJ = 25°C
600
400
300
25°C
200
25°C
TJ = 175°C
100
80
60
1.0
2.0
5.0
10
20
50
100
NUMBER OF CYCLES AT 60 Hz
175°C
VRRM MAY BE APPLIED BETWEEN
EACH CYCLE OF SURGE. THE TJ
NOTED IS TJ PRIOR TO SURGE
MAXIMUM
10
7.0
5.0
3.0
2.0
COEFFICIENT (mV/
°
C)
+0.5
Figure 2. Maximum Surge Capability
0
TYPICAL RANGE
–0.5
1.0
0.7
0.5
0.3
0.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
–1.0
–1.5
–2.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
Figure 1. Forward Voltage
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
HEAT SINK
L
L
Figure 3. Forward Voltage Temperature Coefficient
R
θ
JL(t) , JUNCTION–TO–LEAD TRANSIENT
THERMAL RESISTANCE (
°
C/W)
1/2”
3/8”
1/4”
1/8”
Both leads to heat sink, with lengths as shown. Variations in R
q
JL(t)
below 2.0 seconds are independent of lead connections of 1/8 inch
or greater, and vary only about
±20%
from the values shown. Values
for times greater than 2.0 seconds may be obtained by drawing a
curve, with the end point (at 70 seconds) taken from Figure 8, or
calculated from the notes, using the given curves as a guide. Either
typical or maximum values may be used. For R
q
JL(t) values at pulse
widths less than 0.1 second, the above curve can be extrapolated
down to 10
µs
at a continuing slope.
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
t, TIME (SECONDS)
Figure 4. Typical Transient Thermal Resistance
2
Rectifier Device Data
MR750 MR751 MR752 MR754 MR756 MR758 MR760
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
28
L = 1/8”
24
20
16
12
8.0
4.0
0
0
20
40
60
80
100
120
140
160
180
200
1/4”
3/8”
RESISTIVE INDUCTIVE
LOADS
BOTH LEADS TO HEAT
SINK WITH LENGTHS
AS SHOWN
5/8”
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
20
40
R
θJA
= 40°C/W
SEE NOTE
6
F
(IPK/IAVE = 6.28)
60
80
100
120
140
160
180
200
R
θJA
= 25°C/W
SEE NOTE
RESISTIVE INDUCTIVE LOADS
CAPACITANCE LOADS – 1
F
& 3
F
I(pk) = 5 Iavg
I(pk) = 10 Iavg
I(pk) = 20 Iavg
f = 60 Hz
TL, LEAD TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Maximum Current Ratings
Figure 6. Maximum Current Ratings
NOTES
32
PF(AV) , POWER DISSIPATION (WATTS)
28
24
20
16
12
8.0
4.0
0
0
4.0
8.0
12
16
20
24
28
32
RESISTIVE – INDUCTIVE LOADS
Use of the above model permits junction to lead thermal resistance for
any mounting configuration to be found. Lowest values occur when one
side of the rectifier is brought as close as possible to the heat sink as
shown below. Terms in the model signify:
TA = Ambient Temperature
TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
R
q
S = Thermal Resistance, Heat Sink to Ambient
R
q
L = Thermal Resistance, Lead to Heat Sink
R
q
J = Thermal Resistance, Junction to Case
PF = Power Dissipation
(Subscripts A and K refer to anode and cathode sides, respectively.)
Values for thermal resistance components are:
R
q
L = 40°C/W/in. Typically and 44°C/W/in Maximum.
R
q
J = 2°C/W typically and 4°C/W Maximum.
Since R
q
J is so low, measurements of the case temperature, TC, will be
approximately equal to junction temperature in practical lead mounted
applications. When used as a 60 Hz rectifierm the slow thermal response
holds TJ(PK) close to TJ(AVG). Therefore maximum lead temperature may
be found from: TL = 175°–R
θJL
PF. PF may be found from Figure 7.
The recommended method of mounting to a P.C. board is shown on the
sketch, where R
θJA
is approximately 25°C/W for a 1–1/2” x 1–1/2” copper
surface area. Values of 40°C/W are typical for mounting to terminal strips
or P.C. boards where available surface area is small.
CAPACITANCE LOADS
I(pk) = 5 Iavg
10 Iavg
20 Iavg
6
F
1
F
& 3
F
THERMAL CIRCUIT MODEL
(For Heat Conduction Through The Leads)
R
θS(A)
TA(A)
TL(A)
TC(A)
TJ
R
θL(A)
R
θJ(A)
R
θJ(K)
PF
TC(K)
TL(K)
R
θL(K)
R
θS(K)
TA(K)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Power Dissipation
40
R
θ
JL , THERMAL RESISTANCE,
JUNCTION–TO–LEAD(
°
C/W)
35
30
25
20
15
10
5.0
0
0
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1.0
L, LEAD LENGTH (INCHES)
BOTH LEADS TO HEAT
SINK, EQUAL LENGTH
SINGLE LEAD TO HEAT SINK,
INSIGNIFICANT HEAT FLOW
THROUGH OTHER LEAD
Figure 8. Steady State Thermal Resistance
Rectifier Device Data
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
Board Ground Plane
Recommended mounting for half wave circuit
3
MR750 MR751 MR752 MR754 MR756 MR758 MR760
100
70
TJ = 175°C
CURRENT INPUT WAVEFORM
30
TJ = 25°C
t rr , REVERSE RECOVERY TIME (
m
s)
RELATIVE EFFICIENCY (%)
30
20
TJ = 25°C
10
7.0
5.0
3.0
2.0
1.0
0.1
0
IR
trr
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
IF = 5 A
3A
1A
IF
50
20
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
REPETITION FREQUENCY (kHz)
IR/IF, RATIO OF REVERSE TO FORWARD CURRENT
Figure 9. Rectification Efficiency
1000
700
500
C, CAPACITANCE (pF)
300
200
100
70
50
30
20
10
1.0
1.0
t fr , FORWARD RECOVERY TIME (
m
s)
0.7
0.5
Figure 10. Reverse Recovery Time
u
f
tfr
TJ = 25°C
TJ = 25°C
u
fr
u
fr = 1.0 V
0.3
0.2
u
fr = 2.0 V
0.1
2.0
3.0
5.0 7.0 10
20
30
50
70 100
1.0
2.0
3.0
5.0
7.0
10
VR, REVERSE VOLTAGE (VOLTS)
IF, FORWARD PULSE CURRENT (AMP)
Figure 11. Junction Capacitance
Figure 12. Forward Recovery Time
For a square wave input of amplitude Vm, the efficiency
factor becomes:
RS
RL
VO
Figure 13. Single–Phase Half–Wave
Rectifier Circuit
The rectification efficiency factor
σ
shown in Figure 9 was
calculated using the formula:
V
2
o
(dc)
R
L
R
L
(1)
σ
(square)
+
V
2m
2
R
L
.
V
2m
100%
R
L
+
50%
(3)
σ
V o
+
P
(rms)
+
V
2
o
(rms)
.100%
+
V
2
o
ac)2
)
(dc)2
o
(dc)
.100%
V
P
(dc)
(
For a sine wave input Vm sin (wt) to the diode, assumed
lossless, the maximum theoretical efficiency factor becomes:
V
2m
p
2
R
L
.
V
2m
100%
4R
L
σ
(sine)
+
+
π
4
2
.100%
+
40.6%
(2)
(A full wave circuit has twice these efficiencies)
As the frequency of the input signal is increased, the re-
verse recovery time of the diode (Figure 10) becomes signifi-
cant, resulting in an increasing ac voltage component across
RL which is opposite in polarity to the forward current, there-
by reducing the value of the efficiency factor
σ,
as shown on
Figure 9.
It should be emphasized that Figure 9 shows waveform ef-
ficiency only; it does not provide a measure of diode losses.
Data was obtained by measuring the ac component of Vo
with a true rms ac voltmeter and the dc component with a dc
voltmeter. The data was used in Equation 1 to obtain points
for Figure 9.
4
Rectifier Device Data
MR750 MR751 MR752 MR754 MR756 MR758 MR760
PACKAGE DIMENSIONS
A
D
1
NOTES:
1. CATHODE SYMBOL ON PACKAGE.
MILLIMETERS
MIN
MAX
8.43
8.69
5.94
6.25
1.27
1.35
25.15
25.65
INCHES
MIN
MAX
0.332
0.342
0.234
0.246
0.050
0.053
0.990
1.010
K
DIM
A
B
D
E
B
K
2
STYLE 1:
PIN 1. CATHODE
2. ANODE
CASE 194–04
ISSUE F
Rectifier Device Data
5
Microchip MCU
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