RS8 SERIES
SINGLE-PHASE SILICON BRIDGE
CHENG- YI
ELECTRONIC
VOLTAGE RANGE
50 TO 1000 VOLTS
CURRENT
8.0 Amperes
FEATURES
Ideal for printed circuit board
Realiable low cost construction utilizing
molded plastic technique
Plastic material has underwriters laboratory
Flammibility Classification 94V-0
Surge overload rating:300 amperes peak
Mounting Torgue: 5 In. lb. max
UL recognized file # E149311
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Resistive or inductive load, 60 Hz. For capacitive load, derate current by 20%.
RS8005
RS801
100
70
100
RS802
200
140
200
RS804
400
280
400
8.0
8.0
RS806
600
420
600
RS808
800
560
800
RS810
1000
700
1000
UNITS
V
V
V
A
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Output Current
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load
Maximum DC Forward Voltage
drop per element at 4.0A DC
Maximum DC Reverse Current at rated
@ TA=25 C
DC Blocking Voltage Per Element
@ TA=100 C
0
0
V
RRM
V
RMS
V
DC
50
35
60
@
TC=100 C
@
TA=65 C
0
0
V
(AV)
I
FSM
200
A
V
F
I
R
R
JC
T
J
T
STG
1
10
1
4.7
-55 to +125
-55 to +150
0
V
A
mA
C/W
0
Maximum Themal Resistance (Note)
Operating Temperature Range
Storage Temperature Range
C
C
0
RS8 SERIES
SINGLE-PHASE SILICON BRIDGE
CHENG- YI
ELECTRONIC
Fig.2
-
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
RATING AND CHARACTERISTICS CURVES
RS8 SERIES
Fig.1
-
DERATING CURVE
OUTPUT RECTIFIED CURRENT
AVERAGE FORWARD
OUTPUT
CURRENT
AMPERES
8
INSTANTANEOUS FORWARD CURRENT. (A)
40
20
10
HEAT-SINK
MOUNTING
6
4.0
TJ=25
0
C
1.0
Pulse Width=300s
1% OUTY CYCLE
4
0.4
0.2
0.1
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
2
MOUNTED ON 4x4 INCH
COPER PC BOARD-T
A
0.51 1.27mm LEAD LENGTH
0
50
100
150
0
INSTANTANEOUS FORWARD VOLT
AGE, (V)
TEMPERATURE,
0
C
Fig.4
-
TYPICAL REVERSE
CHARACTERISTICS
10
FORWARD SURGE CURRENT
300
INSTANTANEOUS REVERSE
CURRENT, MICROAMPERES
Fig.3
-
MAXIMUM NON-REPETITIVE PEAK
0
TC=100C
1.0
250
200
0
TJ=150C
8.3ms Single Half Sine Wave
JEDEC Method
0.1
150
100
TA=25
0
C
.01
50
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE
25
0
1
10
100
Fig.5 - TYPICAL JUNCTION CAPACIT
ANCE
PER ELEMENT
250
CAPACITANCE, pF
NUMBER OF CYCLES AT 60 Hz
200
TJ=25
0
C
150
100
50
.01
1
10
100
REVERSE VOLTAGE, VOLTS
NXP MCU
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