NTE3036
Phototransistor
Silicon NPN Photo Darlington Light Detector
Description:
The NTE3036 is a silicon NPN photo Darlington light detector in a TO18 type package designed for
use in applications such as industrial inspection, processing and control, counter, sorters, switching
and logic circuit or any design requiring very high radiation sensitivity at low light levels.
Features:
D
Popular TO18 Type Hermetic Package for Easy Handling and Mounting
D
Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
D
Minimum Light Current: 12mA @ H = 0.5mW/cm
2
D
External Base for Added Control
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Light Current, I
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Device Dissipation (T
A
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Static Characteristics
Collector Dark Current
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdwon Voltage
I
CEO
V
CE
= 10V, H
∼
0
–
50
40
10
10
100
80
15.5
100
–
–
–
nA
V
V
V
Symbol
Test Conditions
Min
Typ
Max
Unit
V
(BR)CBO
I
C
= 100µA
V
(BR)CEO
I
C
= 100µA
V
(BR)EBO
I
E
= 100µA
Electrical Characteristics (Cont’d):
(T
A
= +25°C unless otherwise specified)
Parameter
Optical Characteristics
Light Current
Collector–Emitter Saturation Voltage
Photo Current Rise Time
Photo Current Fall Time
I
L
V
CE(sat)
t
r
t
f
V
CC
= 5V, R
L
= 10Ω, Note 1
I
L
= 10mA, H = 2mW/cm
2
at 2870°K
R
L
= 10Ω, I
L
= 1mA Peak, Note 2
R
L
= 10Ω, I
L
= 1mA Peak, Note 2
12
–
–
–
20
0.6
15
65
–
1.0
100
150
mA
V
µs
µs
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Radiation flux density (H) is equal to 0.5mW/cm
2
emitted from a tungsten source at a color
temperature of 2780°K.
Note 2. For unsaturated response time measurement, radiation is provided by pulse GaAs (gallium–
arsenide) light emitting diode (λ 0.9µm) with a pulse width equal to or greater than 500µs,
I
L
= 1mA peak.
.228 (5.79) Max
.185 (4.69)
.177
(4.5)
.276
(7.01)
Max
.500
(12.7)
Min
.018 (0.45) Dia Typ
.100 (2.54) Dia
Base
Emitter
Collector/Case
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