FHX13LG, FHX14LG
Super Low Noise HEMT
FEATURES
• Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13)
• High Associated Gain: 13.0dB (Typ.)@f=12GHz
• Lg
≤
0.15µm, Wg = 200µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Packaging Available
DESCRIPTION
The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT )
intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz
frequency range. The devices are packaged in cost effective, low parasitic, hermetically
sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or
other low noise applications.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and
consistent performance.
TM
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
*Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
Symbol
VDS
VGS
Pt*
Tstg
Tch
Rating
3.5
-3.0
180
-65 to +175
175
Unit
V
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Noise Figure
Associated Gain
Thermal Resistance
AVAILABLE CASE STYLES:
LG
Note:
RF parameters for LG devices are measured on a sample basis as follows:
Lot qty.
or
to
to
or
Sample qty.
125
200
315
500
Accept/Reject
(0,1)
(0,1)
(1,2)
(1,2)
Symbol
IDSS
gm
Vp
VGSO
NF
Gas
NF
FHX14LG
Gas
Rth
Condition
VDS = 2V, VGS =0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
IGS = -10µA
VDS = 2V,
IDS = 10mA,
f = 12GHz
Channel to Case
Min.
10
35
-0.1
-3.0
-
11.0
-
11.0
-
Limit
Typ. Max.
30
60
-
50
-0.7
-1.5
-
-
0.45
13.0
0.55
13.0
300
0.50
-
0.60
-
400
Unit
mA
mS
V
V
dB
dB
dB
dB
°C/W
FHX13LG
1200
1201
3201
10001
less
3200
10000
over
Edition 1.1
July 1999
1
MEMS传感器
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