P0120009P
2W GaAs Power FET (Pb-Free Type)
♦Features
· Up to 2.7 GHz frequency band
· Beyond +31 dBm output power
· Up to +48dBm Output IP3
· High Drain Efficiency
· 11dB Gain at 2.1GHz
· SOT-89 SMT Package
· Low Noise Figure
Pin No.
1
2, 4
3
Technical Note
SUMITOMO ELECTRIC
♦Functional
Diagram
Function
Input/Gate
Ground
Output/Drain
4
1
Number
of devices
2
3
Container
7” Reel
Anti-static
Bag
♦Ordering
Information
Part No
P0120009P
KP029J
Description
GaAs Power FET
2.11-2.17GHz
Application Circuit
1000
1
♦Applications
· Wireless communication system
· Cellular, PCS, PHS, W-CDMA, WLAN
♦Description
P0120009P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance.
The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI’s long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150°C. You can see the details in
Reliability and Quality Assurance.
♦Absolute
Maximum Ratings (@Tc=25°C)
Parameter
Symbol
Value
Units
Drain-Source Voltage
Vds
10
V
Gate-Source Voltage
Vgs
-4
V
Drain Current
Ids
Idss
---
RF Input Power
Pin
23
(*)
dBm
(continuous)
Power Dissipation
Pt
5.43
W
(**)
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
- 40 to +150
°C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to IP3.
(**) Recommended Tj under operation is below 125°C.
Values
Typ.
---
---
---
---
---
33
Vds=8V
Ids=400mA
f=2.1GHz
11
---
---
48
57
♦Electrical
Specifications (@Tc=25°C)
Parameter
DC
Saturated Drain Current
Transconductance
Pinchoff Voltage
Gate-Source Breakdown Voltage
RF
Thermal Resistance
Frequency
Output Power
@ 1dB Gain Compression
Small Signal Gain
Output IP3
Power Added Efficiency
Symbol
Idss
gm
Vp
|Vgs0|
Rth
f
P1dB
G
IP3
η
add
Test Conditions
Vds=3V, Vg=0V
Vds=8V, Ids=400mA
Vds=8V, Ids=50mA
Igso= - 50µA
Channel-Case
Min.
---
450
- 3.0
3.0
---
Max.
1400
---
- 1.7
---
22
2.7
---
---
---
---
Units
mA
mS
V
V
°C/W
GHz
dBm
dB
dBm
%
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-1-
P0120009P
2W GaAs Power FET (Pb-Free Type)
♦Typical
Characteristics
Technical Note
SUMITOMO ELECTRIC
Power Derating Curve
6
Total Power Dissipation (W)
5
4
3
2
1
00
50
100
150
Case Temperature
(°C)
200
Drain Current (mA)
1000
1500
Transfer Curve
Vgs=0V
-0.5V
-1.0V
500
-1.5V
0
-2.0V
0
2
4
Vds (V)
6
8
♦Load-pull
Characteristics (Typical Data)
Tc=25°C, Vds=8V,
Ids=400mA,
Common Source, Zo=50
Ω
(Calibrated to device leads)
6.0
1.0
0.6
0.8
90
2.4GHz
3.0
4.0
5.0
S11
2.4GHz
S22
0.2
0.4
0.6
0.8
1.0
2.0
4.0
5.0
3.0
2.0
S21
1.2GHz
S12 2.4GHz
10.0
Scale for |S12|
-180
0
1.2GHz
-0.2
1.2GHz
-10.0
2.4GHz
0.02
0
10.0
45
4.0 1.2GHz
5
35
13
2.0
0
- 0.
6
.0
-2
-1
35
.4
-0
Scale for |S21|
-0.8
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-2-
-1.0
-4.
0
- 5 .0
-3
.0
0.
4
0.2
0.04
0
0.06
5
5
-4
-90
P0120009P
2W GaAs Power FET (Pb-Free Type)
Tc=25°C, Vds=8V,
Ids=350mA,
Common Source, Zo=50
Ω
(Calibrated to device leads)
1.0
90
Technical Note
SUMITOMO ELECTRIC
0.8
2.4GHz
2.0
6.0
3.0
4.0
5.0
0.6
4.0
2.0
1.2GHz
S21
1.2GHz S12
2.4GHz
0.02 0.04
2.4GHz
0.06
0
S11
S22
0.2
0.4
2.4GHz
10.0
0.8
1.0
2.0
3.0
4.0
5.0
0.6
10.0
0
Scale for |S12|
-180
-10.0
0.0
0
0
1.2GHz
-0.2
1.2GHz
- 4.
40
0
-5.0
50
- 0.
6
0
- 2.
-1
35
.4
-0
Scale for |S21|
-0.8
Ids=400mA Freq(GHz) S11 M ag
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.807
0.812
0.815
0.819
0.822
0.823
0.827
-1.0
S11Ang
176.1
167.5
159.8
152.8
146.1
139.6
133.4
S11Ang
176.0
167.2
159.5
152.5
145.8
139.2
133.0
S21 M ag
4.225
3.630
3.179
2.826
2.545
2.316
2.124
S21 M ag
4.203
3.612
3.162
2.811
2.533
2.303
2.113
S21 Ang
66.1
58.4
51.2
44.3
37.4
30.7
24.0
S21 Ang
66.2
58.5
51.4
44.4
37.6
30.9
24.2
S12 M ag
0.042
0.045
0.048
0.050
0.053
0.056
0.060
S12 M ag
0.044
0.047
0.049
0.052
0.055
0.058
0.061
S12 Ang
31.9
30.5
29.2
27.5
25.1
22.6
19.5
S12 Ang
31.0
29.6
28.3
26.5
24.0
21.4
18.2
S22 M ag
0.380
0.387
0.394
0.399
0.403
0.406
0.408
S22 M ag
0.400
0.407
0.414
0.417
0.422
0.423
0.427
45
5
5
13
13
Ids=350mA Freq(GHz) S11 M ag
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.808
0.812
0.818
0.821
0.823
0.824
0.828
[Note]
You can download the S-parameter list from our web site:
www.sei.co.jp/GaAsIC
/
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-3-
-
-3
.0
0
0..
4
02
0.2
-
-4
5
-90
-90
S22 Ang
176.7
173.2
170.0
166.9
163.4
159.8
155.7
S22 Ang
175.6
171.8
168.6
165.3
161.6
157.9
153.3
P0120009P
2W GaAs Power FET (Pb-Free Type)
Ids=400mA
80
60
40
20
Pout (dBm)
Gain (dB)
IM3 (dBm)
IP3 (dBm)
IM3/Pout (dBc)
η
add (%)
0
ηadd
-20
IM3
-40
-60
-80
-100
-15
-10
-5
0
5
10
15
20
25
IM3/Pout
Gain
Pout
Pout (dBm)
Gain (dB)
IM3 (dBm)
IP3 (dBm)
IM3/Pout (dBc)
η
add (%)
IP3
80
60
40
20
0
Gain
Technical Note
SUMITOMO ELECTRIC
Ids=350mA
IP3
Pout
ηadd
-20
IM3
-40
-60
-80
IM3/Pout
-100
-15
-10
-5
0
5
10
15
20
25
Pin (dBm)
Pin (dBm)
Device: P0120009P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=400mA
Source Matching: Mag 0.74 Ang -156.6°
Load Matching: Mag 0.554 Ang –171.5°
Device: P0120009P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=350mA
Source Matching: Mag 0.74 Ang –156.6°
Load Matching: Mag 0.49 Ang –172.9°
[Note]
P
out
and
η
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=400mA
Pin
(dBm)
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
Pin
(dBm)
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
Pout
(dBm)
2.8
7.8
12.7
17.7
22.9
27.7
31.7
Pout
(dBm)
2.2
7.5
12.5
17.5
22.7
27.5
31.6
Gain
(dB)
12.8
12.8
12.7
12.7
12.9
12.7
11.7
Gain
(dB)
12.2
12.5
12.5
12.5
12.7
12.5
11.6
IM3
(dBm)
-72.9
-68.6
-57.7
-42.7
-25.1
2.7
17.7
IM3
(dBm)
-72.1
-67.7
-57.6
-42.7
-23.9
3.4
20.9
IM3/Pout
(dBc)
-75.7
-76.3
-70.3
-60.3
-48.0
-25.0
-14.0
IM3/Pout
(dBc)
-74.3
-75.2
-70.0
-60.2
-46.7
-24.2
-10.7
IP3
(dBm)
40.6
45.7
47.8
47.8
46.6
39.3
35.2
IP3
(dBm)
39.4
45.2
47.1
47.3
45.8
38.5
33.2
Id
(mA)
401.3
397.0
387.4
370.0
343.7
323.3
367.9
Id
(mA)
346.7
342.5
333.5
317.3
298.0
289.5
352.1
ηadd
(%)
0.1
0.2
0.6
1.9
6.7
21.3
46.9
ηadd
(%)
0.1
0.2
0.6
2.1
7.5
23.1
47.3
Id=350mA
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-4-
P0120009P
2W GaAs Power FET (Pb-Free Type)
Tc= 25°C, Vds=8V, Ids=400mA, Pin=5d Bm
[Pout-Lstate]
f = 2.1GHz
Γ
pout
: 0.54∠ 169.9
Source : 0.81∠ -155.1
Pout max : 17.65dBm
+j50
+j25
+j100
+j25
Technical Note
SUMITOMO ELECTRIC
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
Γ
IP 3
: 0.55∠ -171.5
Source : 0.74∠ -156.6
IP3 max : 50.7d Bm
+j50
+j100
16.4
17.65
25Ω
25Ω
50Ω
100Ω
50.7
50Ω
100Ω
45.7
-j25
-j50
-j100
-j25
-j50
-j100
Tc= 25°C, Vds=8V, Ids=350mA, Pin=5d Bm
[Pout-Lstate]
f = 2.1GHz
Γ
pout
: 0.54∠ 169.9
Source : 0.81∠ -155.1
Pout max : 17.7d Bm
+j50
+j25
+j100
+j25
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
Γ
IP 3
: 0.49∠ -172.9
Source : 0.74∠ -156.6
IP3 max : 50.55d Bm
+j50
+j100
17.7
25Ω
50Ω
100Ω
25Ω
50.55
50Ω
100Ω
16.45
45.55
-j25
-j50
-j100
-j25
-j50
-j100
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291
e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-5-
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