KSH13009F
0
KSH13009F
Switch Mode series NPN silicon Power Transistor
- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
12 Amperes
NPN Silicon Power Transistor
100 Watts
Absolute Maximum Ratings
CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter
Collector Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
TC=25℃ unless otherwise noted
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
RATING
700
400
9
12
24
6
50
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
TO-220F
1. Base
2. Collector
3. Emitter
12
3
Electrical Characteristics
CHARACTERISTICS
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
TC=25℃ unless otherwise noted
SYMBOL
V
CEO
(sus)
I
EBO
h
FE1
h
FE2
V
CE
(sat)
Test Condition
I
C
=10mA, I
B
=0
V
EB
=9V,I
C
=0
V
CE
=5V,I
C
=5A
V
CE
=5V,I
C
=8A
5V,I 8A
I
C
=5A,I
B
=1A
I
C
=8A,I
B
=1.6A
I
C
=12A,I
B
=3A
I
C
=5A,I
B
=1A
I
C
=8A,I
B
=1.6A
V
CB
=10V, f=0.1MHz
V
CE
=10V,I
C
=0.5A
,
Vcc=125V, Ic=8A
I
B1
=1.6A, I
B2
= -1.6A
R
L
=15.6Ω
4
1.1
3
0.7
180
8
6
Min
400
1
40
30
1
1.5
3
1.2
1.6
V
V
V
V
V
㎊
㎒
㎲
㎲
㎲
Typ.
Max
Unit
V
㎃
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn on Time
Storage Time
Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
V
BE
(sat)
C
ob
f
T
t
on
t
stg
t
F
Note.
R
hFE1
Classification
Y
O
8 ~ 17
15~28
26 ~ 39
Y1(26~33), Y2(31~39)
Package Mark information.
S
YWW
Z
KSH13009F
S
YWW
Z
SemiHow Symbol
Y; year code, WW; week code
hFE1 Classification
◎ SEMIHOW REV.A1,Oct 2007
KSH130
009F
Package Dimension
TO-
TO-220F
±0.20
±0.20
±0 20
.18
φ
3
.20
±0
2.54
±0.20
0.70
±0.20
15.87
±0.20
3.30
±0.20
12
±0.20
2.42
6.6
±0.20
68
2.76
±0.20
9.
±0.20
.75
1.47max
0.80
±0.20
2.54typ
2.54typ
0.50
±0.20
Dimensions in Millimeters
◎ SEMIHOW REV.A1,Oct 2007
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