MUN5111 Series
Bias Resistor Transistor
PNP Silicon
COLLECTOR
3
BASE
1
R1
R2
3
1
2
2
EMITTER
SOT-323(SC-70)
M aximum R atings
( T
A
=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
IC
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(1)TA=25 C
Derate above 25 C
Symbol
PD
Max
202 (1)
310 (2)
1.6 (1)
2.5 (2)
618
403
-55 to +150
Unit
mW
mW/ C
C/W
C
Thermal Resistance, Junction to Ambient (1)
Junction and Storage, Temperature Range
R
θ
JA
TJ,Tstg
1.FR-4 @ minimum pad
2.FR-4 @ 1.0
l
1.0 inch Pad
l
Device Marking and Resistor Values
Device
MUN5111
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
Marking
6A
6B
6C
6D
6E
6F
6G
R1(K)
10
22
47
10
10
4.7
1.0
R2(K)
10
22
47
47
8 8
Device
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5136
MUN5137
Marking
6H
6J
6K
6L
6M
6N
6P
R1(K)
2.2
4.7
4.7
22
2.2
100
47
R2(K)
2.2
4.7
47
47
47
100
22
1.0
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MUN5111 Series
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
WE IT R ON
Symbol
Min
Typ
Max
Unit
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage
(IC=2.0mA, IB =0)
Collector-Base Breakdown Voltage
(IC=10 uA ,IE=0)
Collector-Base Cutoff Current
(V
CB
=-50 V, IE =0)
Collector-Emitter Cutoff Current
(VCE=-50V, IB =0)
Emitter-Base Cutoff Current
(VEB=6.0V, IC =0)
V(BR)CEO
V(BR)CBO
ICBO
ICEO
MUN5111
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5136
MUN5137
IEBO
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
V
V
nA
nA
mA
On Characteristics
Collector-Emitter Saturation Voltage (IC =10mA, IE =0.3mA)
(I C=10mA, I B =5mA)
MUN5130/MUN5131
(IC =10mA, I B =1mA)
MUN5115/MUN5116
MUN5132/MUN5133/MUN5134
3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
VCE(sat)
-
-
0.25
Vdc
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MUN5111 Series
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
WE IT R ON
Symbol
Min
Typ
Max
Unit
Characteristics
On Characteristics
(3)
DC Current Gain
(VCE=-10V, IC =-5.0mA)
MUN5111
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5136
MUN5137
MUN5111
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5136
MUN5137
h FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.9
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
-
Vdc
Output Voltage(on)
(VCC=5.0V, VB =2.5V, R L =1.0k
Ω
)
VOL
(VCC =5.0V, VB =3.5V, RL =1.0k
Ω
)
(VCC=5.0V, V B=5.5V, R L =1.0k
Ω
)
(VCC=5.0V, VB =4.0V, RL =1.0k
Ω
)
Output Voltage(off ) (VCC=5.0V, VB =0.5V, R L =1.0k
Ω
)
(VCC =5.0V, VB =0.05V, R L=1.0k
Ω
)
MUN5130
MUN5115
(VCC =5.0V, VB =0.25V, R L=1.0k
Ω
)
MUN5116
MUN5131
MUN5133
3. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%
V
V
VOH
Vdc
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MUN5111 Series
Electrical Characteristics
On Characteristics
Input Resistor
MUN5111
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5136
MUN5137
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
-
0.8
0.055
0.38
0.038
1.7
(T
A
=25 C Unless Otherwise noted)
WE IT R ON
Symbol
Min
Typ
Max
Unit
Characteristics
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
-
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
-
1.2
0.185
0.56
0.056
2.6
k
Ω
Resistor Ratio MUN5111/MUN5112/MUN5113
MUN5136
MUN5114
MUN5115/MUN5116
MUN5130/MUN5131/MUN5132
MUN5133
MUN5134
MUN5135
MUN5137
4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0 %
R1/R2
MUN51111T1 Series
ALL MUN5111 SERIES DEVICES
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
R
θJA
= 833 C/W
50
0
- 50
0
50
100
T
A
, AMBIENT TEMPERA
TURE ( C)
150
FIG.1 Derating Curve
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MUN5111 Series
MUN51111 Series
WE IT R ON
1000
TYPCIAL ELECTRICAL CHARACTERISTICS-MUN5135
1
V
C E (s at)
, MAXIMUM C OLLE C TOR
V OLTAG E (V OLT S )
h
F E
, DC C UR R E NT G AIN
75 C
100
25 C
10
-25 C
0.1
75 C
25 C
-25 C
0.01
0
5
10
15
20
25
I
C
, C OLLE C TOR C UR R E NT (mA)
30
35
1
0
20
40
60
80
100
I
C
, C OLLE C TOR C UR R E NT (mA)
120
FIG.2 Maximum Collector Voltage versus
Collector Current
10
9
C
ob
, C APAC ITANC E (pF )
8
7
6
5
4
3
2
1
0
I
C
, C OLLE C TOR C UR R E NT (mA)
100
75 C
10
FIG.3 DC Current Gain
-25 C
25 C
1
0.1
0
10
20
30
40
50
V
R
, R E V E R S E B IAS V OLTAG E (V OLT S )
60
0.01
0
1
2
3
4
5
6
7
8
9
10
V
in
, INP UT V OLTAG E (V OLT S )
FIG.4 Output Capacitance
10
V
in
, INP UT V OLTAG E (V OLT S )
FIG.5 Output Current versus Input Voltage
-25 C
75 C
1
25 C
0.1
0
5
10
15
20 25 30
35 40
I
C
, OUT P UT C UR R E NT (mA)
45
50
FIG.6 Input Voltage versus Output Current
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