Broadband Monolithic
Silicon PIN Diode Switches
Rev 2.0
Features
•
Broad Bandwidth
Specified from 50MHz to 20GHz
Usable from 50MHz to 26.5GHz
•
Lower Insertion Loss / Higher Isolation than pHempt
•
Rugged, Fully Monolithic, Glass Encapsulated
Construction
•
Up to +33dBm C.W. Power Handling @ + 25°C
MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
MASW-001100-1190
Description
The MASW-001100, MASW-002100 and
MASW-003100 are broadband monolithic switches using
series and shunt connected silicon PIN diodes. They
are designed for use as moderate signal, high
performance switches in applications up to 26.5GHz.
They provide performance levels superior to those
realized by hybrid MIC designs incorporating beam lead
and PIN chip diodes that require chip and wire
assembly.
These switches are fabricated using M/A-COM’s
patented HMIC
TM
(Heterolithic Microwave Integrated
Circuit) process, US Patent 5,268,310. This process
allows the incorporation of silicon pedestals that form
series and shunt diodes or vias by imbedding them in
low loss, low dispersion glass. By using small spacing
between elements, this combination of silicon and glass
gives HMIC devices low loss and high isolation
performance through low millimeter frequencies.
Large bond pads facilitate the use of low inductance
ribbon leads, while gold backside metallization allows for
manual or automatic chip bonding via 80/20 AuSn solder
or conductive Ag epoxy.
MASW-002100-1191
MASW-003100-1192
Absolute Maximum Ratings @ +25°C
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Applied Reverse Voltage
RF C.W. Incident Power
Bias Current +25°C
Absolute Maximum
-65
o
C to +125
o
C
-65
o
C to +150
o
C
+175
o
C
| - 50V |
+33dBm C.W.
±20mA
Specification Subject to Change Without Notice
M/A-COM, Inc. _____________________________________________________________________________________
North America: Tel. (800) 366-2266
Fax (800) 618-8883
þ
Asia/Pacific:
Tel. +81 3 3263 8761
Fax +81 3 3263 8769
þ
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
1
Monolithic Pin Diode Switches
MASW-001100-1190, MASW-002100-1191, MASW-003100-1192
MASW-001100-1190 (SPST)
Electrical Specifications @ T
A
= +25
o
C, 20mA Bias Current
Parameter
Frequency
Minimum
Insertion Loss
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
-
-
1GHz
-
-
-
46
39
34
22
15
14
-
-
-
Rev 2.0
Nominal
0.4
0.5
0.7
55
47
42
31
33
27
20
-
0.2
Maximum
0.7
0.9
1.2
-
-
-
-
-
-
-
50
-
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
V
dB
Isolation
Input Return Loss
Switching Speed
2
Voltage Rating
Signal Compression (500mW)
1
MASW-002100-1191 (SPDT)
Electrical Specifications @ T
A
= +25
o
C, 20mA Bias Current
Parameter
Frequency
Minimum
Insertion Loss
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
-
-
1GHz
-
-
-
48
40
34
20
18
15
-
-
-
Nominal
0.4
0.5
0.7
63
50
42
27
25
25
20
-
0.2
Maximum
0.7
1.0
1.2
-
-
-
-
-
-
-
50
-
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
V
dB
Isolation
Input Return Loss
Switching Speed
2
Voltage Rating
Signal Compression (500mW)
1
MASW-003100-1192 (SP3T)
Electrical Specifications @ T
A
= +25
o
C, 20mA Bias Current
Parameter
Frequency
Minimum
Insertion Loss
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
-
-
1GHz
-
-
-
49
42
33
20
14
11
-
-
-
Nominal
0.5
0.7
0.9
57
48
42
24
22
21
20
-
0.2
Maximum
0.8
1.1
1.5
-
-
-
-
-
-
-
50
-
Isolation
Input Return Loss
Switching Speed
2
Voltage Rating
Signal Compression (500mW)
1
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
V
dB
1.) Typical Switching Speed measured from 10 % to 90 % of detected RF signal driven by TTL compatible drivers.
2.) Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10µA maximum at -50 volts.
Specification Subject to Change Without Notice
2
______________________________________________________________________________ M/A-COM, Inc.
þ
Asia/Pacific:
Tel. +81 3 3263 8761
Fax +81 3 3263 8769
þ
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
North America: Tel. (800) 366-2266
Fax (800) 618-8883
Monolithic Pin Diode Switches
MASW-001100-1190, MASW-002100-1191, MASW-003100-1192
Typical Performance Curves @ T
A
= +25°C, 20mA Bias Current
MASW-001100-1190
RETURN LOSS vs. FREQUENCY
-10
-15
Rev 2.0
MASW-001100-1190
INSERTION LOSS vs. FREQUENCY
-0.2
Output Return Loss
-20
-25
-30
-35
0
5
10
15
20
25
30
INSERTION LOSS (dB)
RETURN LOSS (dB)
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0
5
10
15
20
25
30
Input Return Loss
FREQUENCY (GHz)
FREQUENCY (GHz)
MASW-002100-1191
RETURN LOSS vs. FREQUENCY
-10
-0.2
MASW-002100-1191
INSERTION LOSS vs. FREQUENCY
INSERTION LOSS (dB)
25
30
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0
5
10
15
20
25
30
RETURN LOSS (dB)
-15
Output Return Loss
-20
-25
-30
-35
0
5
10
15
20
Input Return Loss
FREQUENCY (GHz)
FREQUENCY (GHz)
MASW-003100-1192
RETURN LOSS vs. FREQUENCY
-10
-0.3
MASW-003100-1192
INSERTION LOSS vs. FREQUENCY
INSERTION LOSS (dB)
30
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
-1.1
-1.2
0
5
10
15
20
25
30
RETURN LOSS (dB)
-15
Output Return Loss
-20
-25
Input Return Loss
-30
0
5
10
15
20
25
FREQUENCY (GHz)
FREQUENCY (GHz)
S-Parameters:
S-Parameter data for these devices are available upon request.
Specification Subject to Change Without Notice
M/A-COM, Inc. _______________________________________________________________________________
North America: Tel. (800) 366-2266
Fax (800) 618-8883
þ
Asia/Pacific:
Tel. +81 3 3263 8761
Fax +81 3 3263 8769
þ
3
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
Monolithic Pin Diode Switches
MASW-001100-1190, MASW-002100-1191, MASW-003100-1192
Typical Performance Curves @ TA = +25°C, 20mA Bias Current
INPUT RETURN LOSS (dB)
Rev 2.0
MASW-001100-1190
ISOLATION vs. FREQUENCY
-35
-40
INPUT RETURN LOSS vs. BIAS CURRENT @ 10 GHz
-22
-24
-26
-28
-30
-32
-34
0
5
10
15
20
25
30
35
40
45
50
55
M ASW-001100
M ASW-003100
ISOLATION (dB)
-45
-50
-55
-60
-65
-70
-75
-80
0
5
10
15
20
25
30
M ASW-002100
CURRENT (mA)
FREQUENCY (GHz)
OUTPUT RETURN LOSS vs. BIAS CURRENT@ 10 GHz
OUTPUT RETURN LOSS (dB)
-21.5
-22
-22.5
-23
-23.5
M ASW-001100
MASW-003100-1192
ISOLATION vs. FREQUENCY
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
0
5
10
15
20
25
30
ISOLATION (dB)
-24
-24.5
-25
-25.5
0
5
10
15
20
25
30
35
40
45
50
55
M ASW-003100
M ASW-002100
CURRENT (mA)
INSERTION LOSS vs. BIAS CURRENT @ 10 GHz
INSERTION LOSS (dB)
FREQUENCY (GHz)
-0.35
-0.4
-0.45
-0.5
-0.55
-0.6
-0.65
-0.7
0
5
10
15
20
25
30
35
40
45
50
55
M ASW-003100
M ASW-002100
M ASW-001100
MASW-002100-1191
ISOLATION vs. FREQUENCY
-35
-40
ISOLATION (dB)
-45
-50
-55
-60
-65
-70
-75
-80
CURRENT (mA)
ISOLATION vs. BIAS CURRENT @ 10 GHz
-46
-47
ISOLATION (dB
)
0
5
10
15
20
25
30
FREQUENCY (GHz)
-48
-49
-50
-51
-52
-53
-54
0
5
10
15
20
25
30
35
40
45
50
55
M ASW-002100
M ASW-003100
M ASW-001100
CUR R ENT (m A)
Specification Subject to Change Without Notice
4
______________________________________________________________________________ M/A-COM, Inc.
þ
Asia/Pacific:
Tel. +81 3 3263 8761
Fax +81 3 3263 8769
þ
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
North America: Tel. (800) 366-2266
Fax (800) 618-8883
Monolithic Pin Diode Switches
MASW-001100-1190, MASW-002100-1191, MASW-003100-1192
Operation of the MASW Series Switches
Operation of the MASW series of PIN Switches is
achieved by simultaneous application of negative DC
current to the low loss switching arm J1, J2, or J3, and
positive DC current to the remaining switching arms as
shown in the Bias Connection circuits. DC return is
achieved via J1. The control currents should be supplied
by constant current sources. The voltages at these points
will not exceed +1.5 volts (1.2 volts typical) at currents up
to + 20mA. In the Low Loss state, the series diode must be
forward biased and the shunt diode reverse biased. In the
isolated arm, the shunt diode is forward biased and the
series diode is reverse biased.
Rev 2.0
MASW-001100-1190
and Bias Connections
1
J1
R F IN P U T
20pF
20nH
J 2 B IA S
20pF
100
Ω
20nH
20pF
20pF
S w it c h
C h ip
J2
RF OUTPUT
Driver Connections
MASW-001100-1190
Control Level
(DC Current) at
J2
-20 mA
+20 mA
MASW-002100-1191
and Bias Connections
1
Condition of
RF Output
J1-J2
Low Loss
Isolation
20nH
20pF
20pF
J3
RF OUTP UT
100Ω
20pF
20nH
20pF
J3 BIAS
J1 RF INPUT
20pF
20nH
J2 BIAS
MASW-002100-1191
Control Level
(DC Current) at
J2
-20 mA
+20 mA
J3
+20 mA
-20 mA
Condition
of RF
Output
J1-J2
Low Loss
Isolation
Condition of
RF Output
J1-J3
Isolation
Low Loss
Switch
Chip
20pF
J2
RF OUTPUT
MASW-003100-1192
and Bias Connections
J1 RF INPUT
20pF
1
MASW-003100-1192
Control Level (DC Current) at
Condition
of RF
Output
J1-J2
Conditio
n of RF
Output
J1-J3
Condition
of RF
Output
J1-J4
J4 BIAS
20nH
J2 BIAS
20pF
20nH
20pF
J2
J3
J4
100Ω
20nH
20pF
-20 mA
+20 mA
+20 mA
+20 mA
-20 mA
+20 mA
+20 mA
+20 mA
-20 mA
Low Loss
Isolation
Isolation
Isolation
Low Loss
Isolation
Isolation
Isolation
Low Loss
20pF
J4
RF OUTPUT
20pF
J2
RF OUTPUT
Handling Considerations
Cleanliness:
These chips should be handled in a clean
environment.
Do not attempt to clean chips after
installation.
Electro-Static Sensitivity:
The MASW Series PIN
switches are ESD, Class 1A sensitive (HBM). The proper
ESD handling procedures should be used.
20nH
20pF
J3
RF OUTPUT
J3 BIAS
20pF
Notes:
1. RLC values are for a typical operating frequency of 2 - 18GHz
and Bias Current of ± 20mA per diode.
Specification Subject to Change Without Notice
M/A-COM, Inc. _______________________________________________________________________________
North America: Tel. (800) 366-2266
Fax (800) 618-8883
þ
Asia/Pacific:
Tel. +81 3 3263 8761
Fax +81 3 3263 8769
þ
5
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
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